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AlGaInP epi wafer
 
AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.
AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure.
 
Specs of AlGaInP wafers on chips
 
AlGaInP LED Wafer for chip
Item No.:PAM-CAYG1101
 
Dimensions:
Growth Technique – MOCVD
Substrate Material: Gallium arsenide
Substrate Conduction: n type
Diameter:2"
 
●Chip Dimensions:
1)Chip size:front size:8mil(±1mil)×8mil(±1mil)
                 back side:9mil(±1mil)×9mil(±1mil)
2)Chip thickness:7mil(±1mil)
3)Pad size:4mil(±0.5mil)
4)Structure:see 1-1
 
●Photoelectric Properties
Parameter
Condition
Min.
Typ.
Max.
Unit
Forward VoltageVf1
If=10μA
1.35
V
Forward VoltageVf2
If=20mA
2.2
V
Reverse VoltageLr
Vr=10V
2
μA
Dominant wavelengthλd)
If=20mA
565
575
nm
FWHMΔλ
If=20mA
10
nm
 
●Luminous Intensity:
Code
LC
LD
LE
LF
LG
LH
LI
IV(mcd)
20-30
25-35
30-35
35-50
40-60
50-70
60-80
 
Band gap of strained AlGaInP on GaAs substrate
 
In this tutorial we want to study the band gaps of strained AlxGayIn1-x-yP on a GaAs substrate.
The material parameters are taken from
Band parameters for III-V compound semiconductors and their alloys
I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan
J. Appl. Phys. 89 (11), 5815 (2001)
 
To understand the effect of strain on the band gap on the individual components of this quaternary, we first examine the effects on
1)AlP
strained tensilely
with respect to GaAs
2)GaP
strained tensilely
with respect to GaAs
3)InP
strained compressively
with respect to GaAs
4)AlxGa1-xP
strained tensilely
with respect to GaAs
5)GaxIn1-xP
strained
with respect to GaAs
6)AlxIn1-xP
strained
with respect to GaAs
7)Al0.4Ga0.6P
strained tensilely
with respect to GaAs
8)Ga0.4In0.6P
strained compressively
with respect to GaAs
9)Al0.4In0.6P
strained compressively
with respect to GaAs
Each material layer has a length of 10 nm in the simulation.
The material layers 4), 5) and 6) vary its alloy contents linearly:
4)AlxGa1-xP             from 10 nm to 20 nm from x=0.0 to x=1.0
5)GaxIn1-xP             from 30 nm to 40 nm from x=0.0 to x=1.0
6)AlxIn1-xP              from 50 nm to 60 nm from x=1.0 to x=0.0
 
Refractive index  of  AlGaInP

 

Source:PAM-XIAMEN

 

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