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Home > News > Effects of CdZnTe buffer layer thickness on properties of HgCdTe thin film grown by pulsed laser deposition
Effects of CdZnTe buffer layer thickness on properties of HgCdTe thin film grown by pulsed laser deposition
 
HgCdTe thin films have been deposited on CdZnTe/Si(1 1 1) substrates by pulsed laser deposition (PLD). A Nd:YAG pulsed laser with a wavelength of 1064 nm was used as laser source. The effects of CdZnTe buffer layer thickness which varied with the deposition time in the range from 3 to 15 min on the crystalline, morphology and other properties of HgCdTe thin films were analysed. The results show that the crystalline quality and the composition of the HgCdTe epitaxial layer change with the increase of the deposition time of the buffer layer. The CdZnTe buffer layer with a proper deposition time can improve the quality of HgCdTe films, and the HgCdTe films deposited on the CdZnTe buffer layer with the deposition time of 5 min exhibit the best crystalline quality and smooth surface in our experiment.
Highlights
► We prepared HgCdTe thin film on CdZnTe/Si(1 1 1) substrates by pulsed laser deposition (PLD).
► The effects of CdZnTe buffer layer thickness which varied with the deposition time on the crystalline, morphology and other properties of HgCdTe thin films were analysed.
► The reasons about the variety of the crystalline quality and the composition of the HgCdTe epitaxial layer with the increase of the deposition time of the buffer layer were analysed.
 
Fig. 1. SEM images of the different MCT thin films deposited at CZT buffer layer with various deposition time: (a) 0 min, (b) 3 min, (c) 5 min, (d) 10 min, and (e) 15 min.
 
Source: Applied Surface Science
 
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