PAM XIAMEN offers 80+1mm FZ Si Ingot-5
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-17meta-author
Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy
We have carried out area-selective epitaxy of GaAs microdisk structures on a SiO2-masked GaAs substrate by migration-enhanced epitaxy. We have successfully grown “damage-free” disks at 590 °C. It is found that, for the [...]
2018-09-20meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm,
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
TTV<5µm, Bow<30µm, Warp<30µm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and [...]
2019-07-04meta-author
Chamfer is to grind away the sharp edges and corners around the wafer. Its purpose is to make the mechanical strength of the wafer bigger prevent the wafer edge from cracking, to prevent damage caused by thermal stress, and to increase the flatness of [...]
2022-06-10meta-author
PAM XIAMEN offers 905nm laser diode wafers.
1. Specs of 905nm Laser Diode Wafer
1.1 Three Stark 905nm Pulse LD Structures PAM211202-GAINAS
Layer
Composition
Thickness
Concentration
13
P+ GaAs
/
/
12
P-AlGaAs cladding + waveguide
d~1.6um
/
11
Undoped GaInAs QW PL:880~900nm
/
/
10
N- AlGaAs cladding + waveguide
/
9
N++ GaAs/P++ GaAs Tunnel junction
/
/
8
P- AlGaAs cladding + waveguide
/
7
Undoped GaInAs QW PL:880~900nm
/
/
6
N- AlGaAs cladding [...]
2019-03-13meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
40mm
250
P/E
1-100
SEMI Prime, Soft cst
p-type Si:B
[100]
2″
280
P/P
1-5
SEMI Prime,
p-type Si:B
[100]
2″
280
P/P
1-5
SEMI Prime,
p-type Si:Ga
[100]
2″
350
P/P
1-5
SEMI Prime,
p-type Si:B
[100]
2″
525
P/P
1-30
SEMI,
p-type Si:B
[100]
2″
1000
P/P
1-10
SEMI Prime
p-type Si:B
[100]
2″
1000
P/E
1-10
SEMI Prime
p-type Si:B
[100]
2″
275
P/E
0.5-1.0
SEMI
p-type Si:B
[100]
2″
3150
C/C
>0.5
1Flat
p-type Si:B
[100]
2″
280
P/P
0.4-0.6
SEMI Prime,
p-type Si:B
[100]
2″
275
P/E
0.2-0.4
SEMI Prime,
p-type Si:B
[100]
2″
279
P/P
0.08-0.12
SEMI Prime
p-type Si:B
[100]
2″
300
P/E
0.016-0.017
Prime, NO Flats
p-type Si:B
[100]
2″
300
P/E
0.016-0.017
Prime, NO Flats
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
280
P/P
0.015-0.020
Prime, NO Flats
p-type Si:B
[100]
2″
280
P/P
0.015-0.020
Prime, NO Flats
p-type Si:B
[100]
2″
3000
P/E
0.015-0.020
Groups of [...]
2019-03-07meta-author