PAM-01A1 series detectors are charged particles detector based on planar CZT crystal in a super small size. They have a high energy resolution in vacuum environment.
PAM-01A1 integrated custxomized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert α-ray into exponential decay [...]
2019-04-24meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions [...]
2019-12-02meta-author
PAM XIAMEN offers high-quality BaF2 crystal substrate.
BaF2 is an excellent Infrared crystal and Scintillating crystal. PAM XIAMEN supplies BaF2 crystal substrate, window and blank for all IR applications.
Xtl Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Thermal Expansion
Refractive index
Cubic
6.196
1354 oC
4.88
3 (mohs)
18.1×10-6 / oC)
ho 1.47443
BaF2, (100), 10x10x 0.5 mm, 2 sides polished
BaF2, (100), 10x10x 1.0 mm, [...]
2019-04-16meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer-8
Diameter: 150 mm
N type
Orientation: (100)
Thickness: 675±10μm
Resistivity 6,000-10,000Ωcm
Double Side Polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-19meta-author
PAM XIAMEN offers Ga2O3 Beta Gallium Oxide Wafer and crystal Substrates SEMI-insulating type.
SPECIFICATIONS:
Crystal structure: Monoclinic
Lattice parameter:
a = 12.225 A
b = 3.040 A
c = 5.809 A
β = 103.7 degree
Melt point (℃): 1725
Density: 5.95(g/cm3)
Dielectric constants: 10
Band Gap: 4.8 – 4.9 eV
Conductivity: Semi-insulating
Breakdown Voltage (V/cm): 8 MV/cm
Available Size: 5 x 5 mm, 10 x 10 mm,Ф1″ (1 inch diameter). Special [...]
2019-03-12meta-author
PAM-PA03 series are pixel electrode structured detectors based on CZT crystal.
1. CZT Compton Imaging Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
22.0×22.0 mm2
Thickness
15.0mm
Pixel size
1.38×1.38 mm2
Pixel center space
1.88mm
Pixel array
11×11
Electrode material
Au
Operation temperature
25℃-+40℃
Energy range
60KeV~2.6MeV
Energy resolution(22℃)
Average pixel <5%@662KeV
Storage temperture
10℃~40℃
Storage humidity
20%-80%
2. Spectrum of CZT Compton Imager
3. Features Compton Imaging Detector Based on CZT Crystal
Long-time stability
High energy [...]
2019-04-24meta-author