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GaN based LED Epitaxial Wafer

GaN based LED Epitaxial Wafer

PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.
Item Description

GaN(gallium nitride) based LED Epitaxial Wafer

 

 

 

 

 

 

 

 

 

 As LED wafer manufacturer,we offer LED wafer for LED and laser diodes (LD) application.  

 

 

 

 

 

 

 

 

GaN on Al2O3-2” epi wafer Specification(LED Epitaxial wafer)

 

 

 

 

 

 

 

 

White 445460 nm

 

 

 

 

Blue  465475 nm                                               

 

 

 

 

Green 510530 nm                                                 

 

 

 

 

 

 

 

 

 

 

1. Growth Technique - MOCVD

 

 

 

 

2.Wafer diameter: 50.8mm

 

 

 

 

3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3)

 

 

4.Wafer pattern size: 3X2X1.5μm

 

 

 

 

5.Wafer structure:

 

 

 

 

 

 

 

 

 

 

 

Structure layers

Thickness(μm) 

 

 

 

 

p-GaN

0.2

 

 

 

 

p-AlGaN

0.03

 

 

 

 

InGaN/GaN(active area)

0.2

 

 

 

 

n-GaN

2.5

 

 

 

 

u- GaN

3.5

 

 

 

 

Al2O3 (Substrate)

430

 

 

 

 

 

 

 

 

 

 

6.Wafer parameters to make chips:

 

 

   

 

Item

Color

Chip Size

Characteristics

Appearance

 

PAM1023A01

Blue

10mil x 23mil

 

 

Lighting

Vf = 2.8~3.4V

LCD backlight

Po = 18~25mW

Mobile appliances

Wd  = 450~460nm

Consumer electronic

PAM454501

Blue

45mil x 45mil

Vf = 2.8~3.4V

 

General lighting

Po = 250~300mW

LCD backlight

Wd = 450~460nm

Outdoor display

*If you need to know more detail information of Blue LED Chip, please contact with our sales departments

 

 

 

 

 

 

 

 

7.Application of LED epitaixal wafer:

 

 

 

 

 

Lighting

 

 

 

 

 

 

LCD back light

 

 

 

 

 

 

Mobile appliances

 

 

 

 

 

 

Consumer electronic

 

 

 

 

 

 

 

 

 

 

 

 

 

PAM-XIAMEN's GaN-based epitaxial wafers(Epi Wafer) is for ultra high brightness blue and green light emitting diodes (LED)

 

 

 

 

 

 

 

 

GaAs(Gallium arsenide)based LED Wafer:

 

 

 

 

 

 

 

 

 

 

 

Regarding GaAs LED wafer, they are grown by MOCVD,see below wavelength of GaAs LED wafer:

 

 

 

 

 

 

 

 

Red:585nm,615nm,620630nm              

 

 

Yellow:587 ~ 592nm                                        

 

 

Yellow/Green: 568 ~ 573

 

 

 

 

 

 

 

 

 

For these detail GaAs LED wafer specs,please visit:GaAs Epi Wafer for LED

 

 

 

 

 

 

 

 

 

*Laser Structure on 2 inch GaN (0001) substrate or sapphire substrate is available. 

 

 

                                   

 


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