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Home > News > Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate
Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate
 
A freestanding m-plane GaN wafer is fabricated by using the hydride vapor-phase epitaxy (HVPE) technique on an aluminum carbide buffer layer on an m-plane sapphire substrate. X-ray pole-figure measurements show a clear m-plane orientation of the GaN surface. The full-width at half-maximum (FWHM) of GaN (1 1¯ 0 0) X-ray rocking curve (XRC) with the scattering vector along the [1 1 2¯ 0] direction is approximately 800 arcsec; this indicates good crystallinity. On the other hand, the FWHM for the case in which the scattering vector is oriented along the [0 0 0 1] direction is broad; this suggests the influence of structural defects along this direction. In fact, basal plane stacking faults (BSF) with a density of approximately 3×105 cm−1 is observed by transmission electron microscopy (TEM). The preparation of a 45-mm-diameter m-plane GaN wafer due to spontaneous separation of the GaN layer from the sapphire substrate is demonstrated.
 
Fig. 1. (a) GaN (1 1¯ 0 0) X-ray pole-figure of the GaN layer grown by the method adopted in this study. (b) Illustration of the relationship among the crystal orientations of the layers on the sapphire substrate.
 
Source: Journal of Crystal Growth
 
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