GaN epitaxy template on Sapphire substrate with N-type, P-type or semi-insulating is available for the preparation of semiconductor optoelectronic devices and electronic devices. GaN epitaxial layer on sapphire substrate refers to a composite structure composed of a gallium nitride single crystal thin film material [...]
2019-04-22meta-author
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
2019-03-12meta-author
Bulk GaN Crystal Grown by HVPE
We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates with 3 μm GaN layer grown by metal organic chemical vapor [...]
2012-10-16meta-author
PAM XIAMEN offers LiAlO2 Lithium Aluminate Crystal Substrates.
Main Parameters
Crystal structure
M4
Unit cell constant
a=5.17 A c=6.26 A
Melt point(℃)
1900
Density
2.62(g/cm3)
Hardness
7.5(mohs)
Size
10×3,10×5,10×10,15×15,20×15,20×20,
Ф15,Ф20,Ф1″,Ф2″, Ф2.6″
Thickness
0.5mm, 1.0mm
Polishing
Single or double side polished
Crystal [...]
2019-03-13meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ 4″Ø×105mm ground ingot, n-type Si:P[111] ±2°, (1-2)Ohmcm
FZ 4″Ø×374mm ground ingot, n-type Si:P[111] ±2°, (429.4-453.7)Ohmcm, MCC Lifetime=11,866µs
FZ 4″Ø×400mm ground ingot, n-type Si:P[111] (446.9-458.9)Ohmcm, MCC Lifetime=10,670µs
FZ 4″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, MCC Lifetime>1,200μs, Ground, (6 ingots: 294mm, 296mm, 296mm, 294mm, 219mm, 112mm)
FZ 4″Ø ingot Intrinsic [...]
2019-03-08meta-author
PAM XIAMEN offers BARIUM FLUORIDE BAF2 CRYSTAL.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Barium fluoride, BaF2, crystal has good transmittance over a wide spectrum range, from 150 nm to 12.5 um. It has been widely used [...]
2019-03-11meta-author