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GaAs HEMT epi wafer

We can offer 4"GaAs HEMT epi wafer, please see below typical structure:
 
 1) 4" SI substrate GaAs with [100] orientation,
 2) [buffer] superlattice of Al(0.3)Ga(0.7)As/GaAs with thicknesses
 10/3 nm, repeat 170 times,
 3) barrier Al(0.3)Ga(0.7)As 400 nm,
 4) quantum well GaAs 20 nm,
 5) spacer Al(0.3)Ga(0.7)As 15 nm,
 6) delta-doping with Si to create electron density 5-6*10^11 cm^(-2),
 7) barrier Al(0.3)Ga(0.7)As 180 nm,
 8) cap layer GaAs 15nm.
 
Source: PAM-XIAMEN
 
If you need more information about GaAs HEMT epi wafer, please visit our website:http://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.