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GaAs (Gallium Arsenide) Wafers

GaAs (Gallium Arsenide) Wafers

PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology.
Item Description

(GaAs) Gallium Arsenide Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for wafer cleaning and packaging.  Our GaAs wafer include  2~6 inch  ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

 

Item

Specifications

Remarks

Conduction Type

SC/n-type

SC/p-type with Zn dope Available

Growth Method

VGF

 

Dopant

Silicon

Zn available

Wafer Diamter

2, 3 & 4 inch

Ingot or as-cut availalbe

Crystal Orientation

(100)20/60/150 off (110)

Other misorientation available

OF

EJ or US

 

Carrier Concentration

(0.4~2.5)E18/cm3

 

Resistivity at RT

(1.5~9)E-3 Ohm.cm

 

Mobility

1500~3000cm2/V.sec

 

Etch Pit Density

<5000/cm2

 

Laser Marking

upon request

 

Surface Finish

P/E or P/P

 

Thickness

220~450um

 

Epitaxy Ready

Yes

 

Package

Single wafer container or cassette

 

(GaAs)Gallium Arsenide Wafers for LD Applications

 

Item

Specifications

Remarks

Conduction Type

SC/n-type

 

Growth Method

VGF

 

Dopant

Silicon

 

Wafer Diamter

2, 3 & 4 inch

Ingot or as-cut available

Crystal Orientation

(100)20/60/150 off (110)

Other misorientation available

OF

EJ or US

 

Carrier Concentration

(0.4~2.5)E18/cm3

 

Resistivity at RT

(1.5~9)E-3 Ohm.cm

 

Mobility

1500~3000 cm2/V.sec

 

Etch Pit Density

<500/cm2

 

Laser Marking

upon request

 

Surface Finish

P/E or P/P

 

Thickness

220~350um

 

Epitaxy Ready

Yes

 

Package

Single wafer container or cassette

 

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

 

Item

Specifications

Remarks

Conduction Type

Insulating

 

Growth Method

VGF

 

Dopant

Undoped

 

Wafer Diamter

2, 3 & 4 inch

 Ingot available              

Crystal Orientation

(100)+/- 0.50

 

OF

EJ, US or notch

 

Carrier Concentration

n/a

 

Resistivity at RT

>1E7 Ohm.cm

 

Mobility

>5000 cm2/V.sec

 

Etch Pit Density

<8000 /cm2

 

Laser Marking

upon request

 

Surface Finish

P/P

 

Thickness

350~675um

 

Epitaxy Ready

Yes

 

Package

Single wafer container or cassette

 

6" (GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

 

Item

Specifications

Remarks

Conduction Type

Semi-insulating

 

Grow Method

VGF

 

Dopant

Undoped

 

Type

N

 

Diamater(mm)

150±0.25

 

Orientation

(100)00±3.00

 

NOTCH Orientation

010±20

 

NOTCH Deepth(mm)

(1-1.25)mm   890-950

 

Carrier Concentration

N/A

 

Resistivity(ohm.cm)

1.0×107 or 0.8-9 x10-3

 

Mobility(cm2/v.s)

N/A

 

Dislocation

N/A

 

Thickness(µm)

675±25

 

Edge Exclusion for Bow and Warp(mm)

N/A

 

Bow(µm)

N/A

 

Warp(µm)

≤20.0

 

TTV(µm)

10.0

 

TIR(µm)

10.0

 

LFPD(µm)

N/A

 

Polishing

P/P  Epi-Ready

 

 

2" LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications

 

Item

Specifications

Remarks

Diamater(mm)

Ф 50.8mm ± 1mm

 

Thickness

1-2um or 2-3um

 

Marco Defect Density

5 cm-2

 

Resistivity(300K)

>108 Ohm-cm

 

Carrier

0.5ps

 

Dislocation Density

<1x106cm-2

 

Useable Surface Area

80%

 

Polishing

Single side polished

 

Substrate

GaAs Substrate

 

 
* We also can provide poly crystal GaAs bar, 99.9999%(6N). 

 


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