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GaAs/AlGaAs/GaAs epi wafer

We can offer 2" GaAs/AlGaAs/GaAs epi wafer, please see below typical structure:
 
S.No
Parameters
Specifications
1
GaAs substrate layer thickness
500μm
2
 layer thickness
2μm
3
GaAs top layer thickness
220 nm
4
Mole fraction of Al (x)
0.7
5
Doping level
Intrinsic

Source: PAM-XIAMEN
 
If you need more information about GaAs/AlGaAs/GaAs epi wafer, please visit our website:http://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.