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GaN HEMT epitaxial wafer

GaN HEMT epitaxial wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.
Item Description
2" GaN HEMT Epitaxial Wafers
 
We offer 2" GaN HEMT Wafers, the structure is as follows:
 
Structure(from top to bottom):
*undoped GaN cap(2~3nm)
AlxGa1-xN (18~40nm)
AlN(buffer layer)
un-doped GaN(2~3um)
Sapphire substrate
 
* We can use Si3N to replace GaN on the top, the adhesion is strong, it is coated by sputter or PECVD.
 
AlGaN/GaN HEMT Epi Wafer on sapphire/GaN
 
Layer ID
Layer Name
Material
Al Content(%)
Dopant
Thickness(nm)
0
Substrate
GaN or Sapphire
1
Nucleation Layer
Various,AlN
100
DID
2
Buffer Layer
GaN
0
NID
1800
3
Spacer
AlN
100
NID
1
4
Schottky Barrier
AlGaN
20 or 23 or 26
NID
21
 
2",4" AlGaN/GaN HEMT Epi Wafer on Si
 
1.1Specifications for Aluminium Gallium Nitride (AlGaN) / Gallium Nitride (GaN)   High Electron Mobility Transistor (HEMT)  on Silicon substrate.
 

Requirements

Specification

AlGaN/GaN HEMT Epi Wafer on Si

 

AlGaN/GaN HEMT structure

Refer 1.2

Substrate Material

Silicon

Orientation

<111>

Growth method

Float Zone

Conduction Type

P or N

Size (inch)

2”,4”

Thickness(μm)

625

Backside

Rough

Resistivity(Ω-cm)

>6000

Bow(μm)

≤ ±35

 
1.2.Epistructure: Crack-free Epilayers
 

Layer #

Composition

Thickness

X

Dopant

Carrier Concentration

5

GaN

2nm

-

-

-

4

AlxGa1–xN

8nm

0.26

-

-

3

AlN

1nm

Un-doped

2

GaN

≥1000 nm

Un-doped

1

Buffer/Transition Layer

-

-

Substrate

Silicon

350µm625µm

-

 

 1.3.Electrical Properties of the AlGaN/GaN HEMT structure

 
2DEG Mobility (at 300 K)                      :≥1,800 cm2/V.s
2DEG Sheet Carrier Density (at 300 K)  :≥0.9x1013 cm-2
RMS Roughness (AFM)                        : ≤ 0.5 nm (5.0 µm × 5.0 µm scan Area)

 

 2"AlGaN/GaN on sapphire

 
For specification of AlGaN/GaN on sapphire template, please contact our sales department: sales@powerwaywafer.com.
 
Application: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.
 
Explanation of AlGaN/Al/GaN HEMTs:
 
Nitride HEMTs are being intensively developed for high-power electronics in high-frequency amplification and power switching applications. Often high performance in DC operation is lost when the HEMT is switched – for example, the on-current collapses when the gate signal is pulsed. It is thought that such effects are related to charge trapping that masks the effect of the gate on current flow. Field-plates on the source and gate electrodes have been used to manipulate the electric field in the device, mitigating such current-collapse phenomena.
 
GaN EpitaxialTechnology—-Customized GaN epitaxy on SiC,Si and Sapphire substrate for HEMTs, LEDs:
 
 Related Classification:
 
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