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GaN Templates

GaN Templates

PAM-XIAMEN's Template Products consist of crystalline layers of (gallium nitride)GaN templates, (aluminum nitride)AlN template,(aluminum gallium nitride) AlGaN templates and (indium gallium nitride) InGaN templates, which are deposited on sapphire
Item Description

GaN(gallium nitride ) Templates

 

PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.

 

2" GaN Templates Epitaxy on Sapphire Substrates

 

 

Item

 

 

PAM-2inch-GaNT-N

 

PAM-2inch-GaNT-SI

Conduction Type

N-type

Semi-insulating

Dopant

Si doped or undoped

Fe doped

Size

2"(50mm) dia.

Thickness

4um,20um,30um,50um,100um

30um,90um

Orientation

 

C-axis(0001)+/-1O

Resistivity(300K)

<0.05Ω·cm

>1x106Ω·cm

Dislocation Density

<1x108cm-2

Substrate Structure

 GaN on Sapphire(0001)

Surface Finish

Single or Double Side Polished,epi-ready

Usable Area

≥ 90 %

 

 

 

2" GaN Templates Epitaxy on Sapphire Substrates

 

 

 

 

 

Item

PAM-GaNT-P

Conduction Type

P-type

Dopant

Mg doped 

Size

2"(50mm) dia.

Thickness

5um,20um,30um,50um,100um

Orientation

C-axis(0001)+/-1O

Resistivity(300K)

<1Ω·cm or custom

Dopant Concentration

1E17(cm-3)  or custom

Substrate Structure

 GaN on Sapphire(0001)

Surface Finish

Single or Double Side Polished,epi-ready

Usable Area

≥ 90 %

 

 

 

 

 

 

 

 

 

 

 

 

 3"GaN Templates Epitaxy on Sapphire Substrates

 

 

 

Item

 

PAM-3inch-GaNT-N

Conduction Type

N-type

Dopant

Si doped or undoped

Exclusion Zone:

5mm from outer diameter

Thickness:

20um,30um

Dislocation density

< 1x108cm-2

Sheet resistance (300K):

<0.05Ω·cm

Substrate:

 sapphire

Orientation :

 C-plane

Sapphire thickness:

430um

Polishing:

Single side Polished,epi-ready, with atomic steps.

Backside coating:

(custom)high quality Titanium coating, thickness > 0.4 μm

Packing:

Individually packed under argon Atmosphere vacuum sealed in class 100 clean room.

 

 

3"GaN Templates Epitaxy on Sapphire Substrates

 

 

 

Item

 

PAM-3inch-GaNT-SI

Conduction Type

Semi-insulating

Dopant

Fe Doped

Exclusion Zone:

5mm from outer diameter

Thickness:

20um,30um,90um(20um is the best)

Dislocation density

< 1x108cm-2

Sheet resistance (300K):

 >106 ohm.cm

Substrate:

 sapphire

Orientation :

 C-plane

Sapphire thickness:

430um

Polishing:

Single side Polished,epi-ready, with atomic steps.

Backside coating:

(custom)high quality Titanium coating, thickness > 0.4 μm

Packing:

Individually packed under argon Atmosphere vacuum sealed in class 100 clean room.

 

4"GaN Templates Epitaxial on Sapphire Substrates

Item

PAM-4inch-GaNT-N

Conduction Type

N-type

Dopant

  undoped

Thickness:

4um

Dislocation density

< 1x108cm-2

Sheet resistance (300K):

<0.05Ω·cm

Substrate:

 sapphire

Orientation :

 C-plane

Sapphire thickness:

-

Polishing:

Single side Polished,epi-ready, with atomic steps.

Packing:

Individually packed under argon Atmosphere vacuum sealed in class 100 clean room.

 

 

 

2" AlGaN, InGaN, AlN Epitaxy on Sapphire Templates: custom

 

2”AlN Epitaxy on Sapphire Templates

 

 

Item

 

PAM-AlNT-SI

Conduction Type

semi-insulating

Diameter

Ф 50.8mm ± 1mm

Thickness:

1000nm+/- 10%

Substrate:

 sapphire

Orientation :

 

C-axis(0001)+/-1O

Orientation Flat

A-plane

XRD FWHM of (0002)

<200 arcsec.

Useable Surface Area

≥90%

 Polishing:

None

 

2”InGaN Epitaxy on Sapphire Templates

 

 

Item

 

PAM-INGAN

Conduction Type

-

Diameter

Ф 50.8mm ± 1mm

Thickness:

100-200nm, custom

Substrate:

 sapphire

Orientation :

 

C-axis(0001)+/-1O

Dopant

In

Dislocation Density

~ 108 cm-2

Useable Surface Area

≥90%

Surface Finish

Single or Double Side Polished,epi-ready

     

 

 

2”AlGaN Epitaxy on Sapphire Templates

 

 

 

Item

 

PAM-AlNT-SI

Conduction Type

semi-insulating

Diameter

Ф 50.8mm ± 1mm

Thickness:

1000nm+/- 10%

Substrate:

 sapphire

Orientation :

C-plane

Orientation Flat

A-plane

XRD FWHM of (0002)

<200 arcsec.

Useable Surface Area

≥90%

 Polishing:

None

 

2"GaN on 4H or 6H SiC substrate

1)Undoped GaN buffer or AlN buffer are available;

2)n-type(Si doped or undoped), p-type or semi-insulating GaN epitaxial layers available;

3)vertical conductive structures on n-type SiC;

4)AlGaN – 20-60nm thick, (20%-30%Al), Si doped buffer;

5)GaN n-type layer on 330µm+/-25um thick 2” wafer.

6) Single or double side polished, epi-ready, Ra<0.5um

7)Typical value on XRD:

Wafer ID

Substrate ID

XRD(102)

XRD(002)

Thickness

#2153   

X-70105033 (with AlN)

298

167

679um

 

 

 

 

 

 

 

 

 

 

2" GaN on Silicon Substrate

1) GaN layer thickness:50nm-4um;

2) N type or semi-insulating GaN are available;

3) Single or double side polished, epi-ready, Ra<0.5um

 

 

 

Hydride Vapour Phase Epitaxy (HVPE) process

 

Grown by HVPE process and technology for the production of compound semiconductors such as GaN, AlN, and AlGaN. They are used in a wide applications:solid state lighting, short wavelength optoelectronics and RF power device.

 

In the HVPE process, Group III nitrides (such as GaN, AlN) are formed by reacting hot gaseous metal chlorides (such as GaCl or AlCl) with ammonia gas (NH3). The metal chlorides are generated by passing hot HCl gas over the hot Group III metals. All reactions are done in a temperature controlled quartz furnace.


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