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Home > News > Low temperature synthesis of GaN films on ITO substrates by ECR-PEMOCVD
Low temperature synthesis of GaN films on ITO substrates by ECR-PEMOCVD
 
GaN films were deposited on indium tin oxide (ITO) coated glass substrates at various deposition temperatures using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N2 are applied as precursors of Ga and N, respectively. The crystalline quality and photoluminescence properties of as-grown GaN films are systematically investigated as a function of deposition temperature by means of X-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and room temperature photoluminescence (PL). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on ITO glass substrates under optimized deposition temperature of 430 °C, and the room temperature PL spectra of the optimized GaN film show an intense near-band-edge luminescence located at 360 nm. The obtained GaN/ITO/glass structure was especially attractive for transparent optoelectronics applications with inexpensive ITO/glass substrate.
Highlights
► High quality GaN films were grown on ITO substrates by ECR-PEMOCVD.
► The influences of deposition temperature on properties of GaN films were studied.
► The ITO layer can be used as the transparent electrode directly in the devices.
► The GaN/ITO glass structure has potential in the application of practical devices.
Source: Vacuum
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