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InGaAsP/InGaAs on InP substrates

 

 

We provide InGaAsP/InGaAs epi on InP substrates as follows:

 

1.Structure: 1.55um InGaAsP QW laser

 

No.

Layer

Doping

0

InP Substrate

S-doped, 2E18/cm-3

1

n-InP buffer

1.0um, 2E18/cm-3

2

1.15Q-InGaAsP waveguide

80nm,undoped

3

1.24Q-InGaAsP waveguide

70nm,undoped

4

4×InGaAsP QW+1%

5×InGaAsP Barrier

5nm

 

 

10nm

 

PL:1550nm

5

1.24Q-InGaAsP waveguide

70nm,undoped

6

1.15Q-InGaAsP waveguide

80nm,undoped

7

InP space layer

20nm,undoped

8

InP

100nm,5E17

9

InP

1200 nm, 1.5E18

10

InGaAs

100 nm, 2E19

 

2.Specification:

1)   Method: MOCVD

2)   Size of wafer: 2”

3)   InGaAsP/InGaAs  growth on InP substrates

4)   3-5 types of InGaAsP composition

5)   PL tolerance of +/- 5nm, PL std. dev. <3nm across the wafer (with an exclusion zone of 5mm from the wafer circumference)

6)   PL target range 1500nm.

7)   Strain target -1.0% +/- 0.1% (compressive strain)

8)    No. of layers: 8-20

9)   Total growth thickness: 1.0~3.0um

10)   Parameters to be measured: X-Ray Diffraction Measurement (thickness, strain), Photoluminescence Spectrum (PL, PL uniformity), Carrier Concentration Profiling

 

We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) process in ErAs:GaAs. The lifetime and the TPA were measured

with a fiber-based 1550 nm time-resolved differential transmission (∆T) set-up. The InGaAs-based materials show a positive ∆T with sub-picosecond lifetime, whereas ErAs:GaAs shows a negative ∆T consistent with a two-photon absorption process.

 

Source: PAM-XIAMEN, American Chemical Society

 

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