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Reliability analysis of InGaN Blu-Ray laser diode
 
The purpose of this work is an in depth reliability analysis of Blu-Ray InGaN laser diodes (LD) submitted to CW stress at different currents and temperatures. During reliability tests, LD devices exhibit a gradual threshold current increase, while slope efficiency is almost not affected by the ageing treatment. Furthermore we demonstrate that: (i) the degradation rate shows a linear correlation with stress current level; (ii) the Ith increase is correlated to the decrease in non-radiative lifetime (τnr); (iii) stress temperature acts as an accelerating factor for LD degradation; (iv) pure thermal storage does not significantly degrade LDs characteristics.
 
Source:Microelectronics Reliability
 
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