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Temperature dependent growth of InGaN/GaN single quantum well
 
InGaN/GaN single quantum well (SQW) structures under various InGaN growth temperatures have been grown by metal organic chemical vapor deposition (MOCVD), the surface morphologies and optical properties are investigated. The radius of the typical V-pits on the SQW surface is affected by the InGaN well-temperature, and the surface roughness decreased as the well-temperature reduced. Room-temperature photoluminescence (PL) and cathode luminescence (CL) shows the quantum well and quantum dot (QD)-like localized state light emission of the SQWs grown at 700 and 690 °C, respectively, whereas the samples grown at 670 and 650 °C present hybrid emission peaks. Excitation power dependent PL spectra indicates the QD-like localized state emission dominates at low excitation power and the quantum well emission starts to take over at high excitation power.
Highlights
► We compare the growth of InGaN/GaN single quantum well at different InGaN growth temperatures.
► The critical growth temperature of quantum dot-like structure in InGaN/GaN SQW is obtained.
► The virtual energy of the localized state hybrid with quantum well state has been proposed.
 
Source: Radiation Measurements
 
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