The ultra-high voltage gate turn-off thyristor (GTO) device based on 4H-SiC, under the action of bidirectional carrier injection and conductivity modulation effects, can withstand high voltage while obtaining high pass current, meeting the requirements of ultra high power applications in terms of power density and [...]
2023-11-17meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer with Diameter 150mm, Both Side Etched
Silicon wafers, per SEMI Prime, E/E
6″ (150.0±0.2mm)Ø×400±25µm,
FZ n-type Si:P[100]±0.5°,
Ro=(1-5)Ohmcm,
Carbon<2E16 /cm³, Oxygen<2E16 /cm³,
TTV<12µm, Bow<40µm, Warp<50µm,
Bothsidesetched, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10meta-author
PAM XIAMEN offers 6″ FZ Silicon Ingot with Diameter 150.7±0.3mmØ
Silicon ingot, per SEMI, G 150.7±0.3mmØ
FZ p-type Si:B[110]±2.0°
Ro > 1,000 Ohmcm
Ground Ingot
NO Flats
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc
MCC Lifetime>1,000µs
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10meta-author
PAM XIAMEN offers NaCl Sodium Chloride Crystal Substrates.
Sodium Chloride (NaCl) Crystal Substrates
Main Parameters
Crystal structure
Face-centered cubic Fm3m, No. 225, a=5.64Å
Growth method
crystallization process
Density
2.165 g/cm3
Melting Point
801 [...]
2019-03-14meta-author
Figure 1: Cross-sectional diagram of the GaN-HEMT device
Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.
This can be used in a high-capacity wireless network with coverage over a radius of several [...]
2017-12-04meta-author
Photoluminescence-based material quality diagnostics in the manufacturing of CdZnTe ionizing radiation sensors
A photoluminescence method was used for characterization of crystalline perfection of CdZnTe single crystals in the different stages of an up-to-date process of ionizing radiation sensor production. It was shown that the point [...]