PAM-P02, the α series energy spectrum detectors are charged particles detector based on CZT crystal in super small size. They can be used in common environment and vacuum environment. For vacuum environment, they have an especially high energy resolution. The detector integrates CZT crystal, visible light [...]
2019-04-23meta-author
PAM XIAMEN offers ZnTe single crystal substrate. ZnTe single crystal substrate, undoped, N type, (110) 10x10x 0.5mm, 2sp ZnTe Random orientation , n type, 10x10x0.5 mm, 2sp ZnTe single crystal substrate, undoped, P-type (100) 10x10x1.0mm, single side with scratch/dig 60/40 ZnTe, N type, (110) [...]
2019-05-21meta-author
PAM-XIAMEN is available to offer P-type SiC substrates, please refer to: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html. The p-type substrate prepared by liquid-phase method can be applied to prepare IGBT devices and bipolar devices, solving the problem of missing p-type substrates in the SiC industry. At present, significant breakthroughs have been made in [...]
2024-03-18meta-author
GaN/SiC HEMT epi-wafers PAM-XIAMEN offers GaN/SiC HEMT epi-wafers GaN on SiC HEMT epi-wafers (PAM-101009-HEMT 1) 4-inch SiC substrate 2) nucleation layer 3) Buffer layer (GaN channel, GaN buffer) – 15000-20000 A 4) Barrier layer (AlN) – 60-70A 5) Spacer (GaN) – 10A 6) SiN layer – 30A Expected [...]
2020-03-18meta-author
Aluminium gallium arsenide epi wafer (AlGaAs or AlxGa1−xAs) is a semiconductor wafer material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula stands a number between 0 and 1 – this indicates an arbitrary alloy [...]
2020-07-17meta-author
Due to the high growth pressure and relatively low temperature, Al is not easily evaporated and lost in the liquid-phase method. Adding Al to the flux used in the liquid-phase method can easily obtain P-type silicon carbide (SiC) crystals with high carrier concentration, solving the [...]
2021-04-08meta-author