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Layer structure of 703nm Laser

 

We can offer Layer structure of 703nm Laser as follows:

  

Layer

Composition

Thickness (um)

Doping(cm-3)

Cap

P+- GaAs

0.2

Zn:>1e19

Cladding

p - Al0.8Ga0.2As

1

Zn:1e18

Etch stop

GaInP

0.008

Zn:1e18

Top barrier

Al0.45Ga0.55As

0.09

Undoped

Well

Al0.18Ga0.82As

0.004

Undoped

Barrier

Al0.45Ga0.55As

0.01

Undoped

Well

Al0.18Ga0.82As

0.004

Undoped

Barrier

Al0.45Ga0.55As

0.01

Undoped

Well

Al0.18Ga0.82As

0.004

Undoped

Bottom barrier

Al0.45Ga0.55As

0.09

Undoped

Cladding

n - Al0.8Ga0.2As

1.4

Si:1e18

Buffer

n - GaAs

0.5

Si:1e18

Substrate

n+ - GaAs

 

S :>1e18

 

Source:PAM-XIAMEN

 

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