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Light-emitting InGaN/GaN Heterojunction Bipolar Transistors

 

The electrical and optical characteristics of high-gain, small-area InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor deposition on sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10μm2 emitter device demonstrates a current gain β = ΔICIB = 49 at 3mA and breakdown voltage, BVCEO>70V. The radiative recombination spectrum of a large area 100×100μm2 emitter HBT is measured, showing a peak at 387nm and a full width at half maximum of 47nm. A 1kHz modulation input is applied to the HBT and both the optical and electrical outputs of a large area device is demonstrated.

SOURCE:AIP

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