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Home > News > Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
 
GaN thin films were grown on ZnO/c-Al2O3 with excellent uniformity over 2 in. diameter wafers using a low temperature/pressure MOVPE process with N2 as a carrier and dimethylhydrazine as an N source. 5 mm×5 mm sections of similar GaN layers were direct-fusion-bonded onto soda lime glass substrates after chemical lift-off from the sapphire substrates. X-Ray Diffraction, Scanning Electron Microscopy and Transmission Electron Microscopy confirmed the bonding of crack-free wurtzite GaN films onto a glass substrate with a very good quality of interface, i.e. continuous/uniform adherence and absence of voids or particle inclusions. Using this approach, (In) GaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming the expensive sapphire substrate so it can be utilized again for growth.
Highlights
► GaN was grown by MOVPE on ZnO-buffered sapphire template.
► We have transferred the crystalline GaN film onto Glass substrate.
► The direct water bonding was conducted at room temperature.
► The adhesion forces were found to be very strong and durable.
► Wafer scale GaN on ZnO growth was demonstrated with very high uniformity.
 
XRD 2θ/ω scans for the GaN/ZnO/c-sapphir 2-inch wafer, plus an image showing the excellent optical transparency. In-wafer variation for the (0002) XRD peak intensity as a function of
position for a diametric scan across the wafer.
 
Source: JouJournal of Alloys and Compounds
 
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