Chemical Mechanical Polishing (CMP) on Carbon(C) Surface of SiC Wafer
SiC wafer materials have broad bandgap, high electron saturation mobility, and excellent thermal properties, which have great application prospects in high-temperature, high-frequency, and high-power devices. The surface quality of Si surface directly affects the quality of SiC epitaxial thin film and the performance of its devices. However, defects on [...]