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III-V Nitrides Wafer

III-V Nitrides Wafer

PWAM offers semiconductor materials,single crystal substrate - Nitride semiconductor wafer,Which are for deposition of III-V compounds for the development of special devices such as blue LEDs and LASERS.
Item Description

III-V Nitride Wafer

PWAM offers semiconductor materials,Nitride wafer,Which are for deposition of III-V compounds for the development of special devices such as blue LEDs and LASERS.

Crystal

Structure

M.P.

Density

Lattice Mis-match to GaN

Thermal Expansion

Growth Tech. .& Max size

Standard substrate size (mm)

oC

g/cm3

(10-6/k)

 SiC   

(6H as example)

Hexagonal

a=3.073  Å

c=15.117 Å

 

~2700

 

 

subl.

3.21

3.5 % at <0001>ori.

10.3

Ø4“

 

 

 

Ø4"/Ø3"x0.35mm,Ø2"x0.33mm

20x20x0.33mm,15x15x0.33mm

10x10x0.33mm,5x5x0.33mm

1 side epi polished

Al2O3

Hexagonal

a=4.758 Å

c=12.99 Å

 

2030

3.97

14% at <0001>ori.

7.5

CZ

 

Ø4”

 

Ø50 x 0.33mm

Ø25 x 0.50mm

10x10x0.5mm

1 or 2 sides epi polished

LiAlO2

Tetragonal

a=5.17 Å

c=6.26 Å

1900 ~

2.62

1.4 % at <100>ori.

/

CZ

Ø20 mm

 

10x10x0.5mm

1 or 2 sides epi polished

 

LiGaO2

Orthor.

a=5.406 Å

b=5.012Å

c=6.379 Å

1600

4.18

0.2 % at <001>ori.

/

CZ

Ø20 mm

 

 

10x10x0.5mm

1 or 2 sides epi polished

 

 

MgO

Cubic

a=4.216 Å

 

2852

3.58

3% at <111>ori.

12.8

Flux

 

Ø2"

2”x2”x 0.5 mm,Ø2” x  0.5   mm

1”x1”x 0.5 mm,Ø1” x  0.5   mm

10 x10x0.5 mm

1 or 2 sides epi polished

MgAl2O4

Cubic

a=8.083 Å

 

2130

3.6

9% at  <111>ori.

7.45

CZ

Ø2“

 

Ø2" x 0.5mm

10x10x0.5mm

1 or 2 sides epi polished

ZnO

Hexag.

a=3.325 Å

c=5.213 Å

1975

5.605

2.2 % at <0001>ori.

2.9

Hydro-thermal

20mm

 

20x20x0.5mm

1 or 2 sides epi polished

 

GaN

Hexagonal

 

6.15

 

5.59

 

 

HVPE

 

 

Ø2" x 0.26mm

Ø1.5" x 0.26mm

14mm x 15mm x 0.23mm

10mm x 10mm x 0.23mm

5mm x 5mm x0.23mm



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