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Photoemission study of LT-GaAs

 
The electronic structure of GaAs (1 0 0) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As2/Ga flux ratios. Analysis of As 3d core level spectra does not indicate qualitative differences in respect to high temperature grown GaAs (1 0 0) layers. The Ga 3d core level spectra include a new component in comparison to the spectra of high temperature grown GaAs. The origin of this component is attributed to high density of As antisites in low-temperature grown GaAs.
 
Source: Journal of Alloys and Compounds
 
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