PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author
The development of solid state physics, inorganic chemistry, organic chemistry, physical chemistry and other disciplines, in-depth research on the structure and physical properties of matter, has promoted the research and understanding of the nature of materials. Therein, semiconductor material is one crucial part of [...]
2022-08-29meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
2″
1000
P/E
0.001-0.005
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01 {0.00087-0.00100}
SEMI Prime
p-type Si:Ga
Poly.
2″
C/C
0.024-0.036
Gallium doped Concentrate (each with measured Gallium content)
n-type Si:P
[110]
2″
280
P/E
19-33
SEMI Prime, 1 Flat @ [1,-1,0], in hard cst
n-type Si:P
[110]
2″
280
P/E
19-33
SEMI Prime,
n-type Si:P
[110] ±0.5°
2″
300
P/E
1-5
SEMI Prime, , TTV<5μm
n-type Si:Sb
[110]
2″
375
P/E
0.005-0.020
SEMI
n-type Si:Sb
[110]
2″
375
P/E
0.005-0.020
SEMI
n-type Si:P
[100]
2″
400
P/P
210-880
SEMI Prime,
n-type Si:P
[100]
50mm
280
P/E
130-280
SEMI Prime,
n-type Si:P
[100]
2″
300
P/P
33-48
SEMI TEST [...]
2019-03-07meta-author
PAM-XIAMEN is able to supply you with P type SiC substrate, more specifications please see: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html.
SiC single crystal has the characteristics of wide bandgap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift speed, and good stability. Among the numerous crystal [...]
2024-04-19meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
SI.
Undoped
VGF
-100
>1E7
600-650
P/E
PRIME
76.2
SI.
Undoped
VGF
-100
>1E7
610-660
P/P
EPI
76.2
N
Si
VGF
-100
600-650
P/E
PRIME
76.2
P
Zn
VGF
-100
600-650
P/E
PRIME
76.2
Undoped
CZ
-100
>30
300-350
P/P
EPI
76.2
Undoped
CZ
-100
>30
350-400
P/E
EPI
76.2
N
Sb
CZ
(100)-6
.01-.04
100-200
P/E
TEST
76.2
N
Sb
CZ
-100
.005-.02
300-350
P/P
EPI
76.2
N
Sb
CZ
-100
.005-.02
350-400
P/E
EPI
76.2
P
Ga
CZ
-100
.01-.04
300-350
P/P
EPI
76.2
P
Ga
CZ
-100
.01-.04
350-400
P/E
EPI
76.2
N
Si
VGF
-100
600-650
P/E
PRIME
76.2
P
Zn
VGF
-100
600-650
P/E
PRIME
76.2
Si
Fe
VGF
-100
5000000
600-650
P/E
PRIME
76.2
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
76.2
Shipping Cassette
ePak
Holds25Wafers
Clean Room
In addition, we can offer substrate used as Alpha Spectrometer Consumables:
Silicon substrate (PAM210610 – SI)
Main technical characteristics:
Material: silicon (can be replaced with quartz).
Diameter – (74.0 ± 0.5) mm.
Thickness – (0.5 ± 0.05) mm.
Grinding [...]
2019-03-04meta-author
Growth of 3C–SiC films on Si substrates by vapor–liquid–solid tri-phase epitaxy
Cubic SiC films (3C–SiC) were deposited on (111) Si substrates by a vapor–liquid–solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the [...]