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SOI(Silicon-on-insulator) Wafer,

SOI(Silicon-on-insulator) Wafer,

(SOI)Silicon-on-insulator Wafer, a structure where a thin silicon layer lies atop an insulator, are promising semiconductor materials for leading edge devices such as low power and high speed LSIs, smart sensors, and smart power devices
Item Description

SOI(Silicon-on-insulator) Wafer, a structure where a thin silicon layer lies atop an insulator, are promising semiconductor materials for leading edge devices such as low power and high speed LSIs, smart sensors, and smart power devices, as well as CMOS(comple-mentary metal oxide semiconductor) devices and MEMS and MOEMS devices. We provide several kinds of SOI wafers by SIMOX and BONDING technology, to meet various customer's requirements.

We can offer Silicon on insulator wafer on 4",6",8",10"size.now we offer 6" specs for your reference.

 

Wafer specification by SIMOX Technology:6" 

 

Item

Parameters

 
 

Overall Wafer

Diameter

150±0.2mm

 

Backside Finish

Etched with oxide

 

Edge Exclusion

5mm

 

SOI Layer

Device Wafer Spec

SO-ST-103

 

Thickness

3±0.75μm or custom

 

(9pts,EE=10mm)

 

Crystal Growth Method

CZ

 

Orientation

(100) ±0.5deg

 

Dopant

OK

 

Conductivity type

OK

 

Resistivity

10-20(Center) Ohm.cm

 

Primary Flat Location

{110}± 1 Deg.

 

Primary Flat Length

57.5±2.5mm

 

Scratches

None (EE 10mm)

 

Voids

None (by IR)

 

[> 0,5mm² in size]

 

Buried Oxide Layer

Mean Thickness

2.0±0.1μm

 

Oxide Type

Thermal Oxide

 

Handle Wafer

Handle Wafer

 

 

Mean Thickness

625±15μm

 

Crystal Growth Method

CZ

 

Orientation

(100) ±0.5deg

 

Dopant

OK

 

Conductivity type

OK

 

Resistivity

0.01-0.02(center)Ohm.cm

 

Primary Flat Location

{110}± 1 Deg.

 

Primary Flat Length

57.5±2.5mm

 

 

Wafer Specification by Bonding Technology: 6"

 

Item

Parameters

 
 

Overall Wafer

Diameter

150±0.2mm

 

Backside Finish

Etched with oxide

 

Edge Exclusion

5mm

 

SOI Layer

Device Wafer Spec

SO-ST-103

 

Thickness

3±0.75μm or custom

 

(9pts,EE=10mm)

 

Crystal Growth Method

CZ

 

Orientation

(100) ±0.5deg

 

Dopant

OK

 

Conductivity type

OK

 

Resistivity

10-20(Center)Ohm.cm

 

Primary Flat Location

{110}± 1 Deg.

 

Primary Flat Length

47.5±2.5mm

 

Scratches

None (EE 10mm)

 

Voids

None (by IR)

 

[> 0,5mm² in size]

 

Buried Oxide Layer

Mean Thickness

2.0±0.1μm

 

Oxide Type

Thermal Oxide

 

Handle Wafer

Handle Wafer

 

 

Mean Thickness

625±15μm

 

Crystal Growth Method

CZ

 

Orientation

(100) ±0.5deg

 

Dopant

OK

 

Conductivity type

OK

 

Resistivity

0.01-0.02(center)Ohm.cm

 

Primary Flat Location

{110}± 1 Deg.

 

Primary Flat Length

47.5±2.5mm

 

 


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