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SiC Epitaxy

SiC Epitaxy

We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect
Item Description

SiC(Silicon Carbide) Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar

 

Items 

Specification

Typical Value

Poly-type

4H

Off-orientation toward

4 deg-off

<11 2(_) 0>

Conductivity

n-type

Dopant

Nitrogen

Carrier Concentration

5E15-2E18 cm-3

Tolerance

± 25%

± 15%

Uniformity

2”(50.8mm)< 10%

7%

3”(76.2mm)< 20%

10%

4” (100mm)< 20%

15%

Thickness Range

5-15 μm

Tolerance

± 10%

± 5%

Uniformity

2”< 5%

2%

3”< 7%

3%

4”< 10%

5%

Large Point Defects

2”< 30

2”< 15

3”< 60

3”< 30

4”< 90

4”< 45

Epi Defects

20 cm-2

10 cm-2

Step Bunching

≤2.0nm (Rq)

≤1.0nm (Rq)

(Roughness)

 

Notes:

• 2 mm edge exclusion for 50.8 and 76.2 mm, 3 mm edge exclusion for 100.0 mm

• Average of all measurement points for thickness and carrier concentration (see pg. 5)

• N-type epi layers <20 microns are preceeded by n-type, 1E18, 0.5 micron buffer layer

• Not all doping densities are available in all thicknesses

• Uniformity:standard deviation(σ)/average

• Any special requirement on the epi-parameter is on request

 

Test Methods

 No.1. Carrier concentration:Net doping is determined as an average value across the afer using Hg probe CV.

 No.2. Thickness: Thickness is determined as an average value across the wafer using FTIR.

No.3.Large point defects: Microscopic inspection performed at 100X, on an Olympus Optical Microscope, or comparable.

No.4. Epi Defects Inspection performed under KLA-Tencor Candela CS20 Optical Surface Analyzer. 

 No.5. Step bunching: Step bunching and Roughness are scaned by AFM (atomic force microscope) on a 10μm x10μm area

 

Large Point Defects Descriptions
Defects which exhibit a clear shape to the unassisted eye and are > 50microns across. These features include spikes, adherent particles, chips andcraters. Large point defects less than 3 mm apart count as one defect.
 
Epitaxy Defect Descriptions
D1. 3C Inclusions
Regions where step-ow was interrupted during epi layer growth. Typicalregions are generally triangular although more rounded shapes are sometimesseen. Count once per occurrence. Two inclusions within 200 microns count asone.
 
D2. Comet Tails
Comet tails have a discrete head and trailing tail. These features are alignedparallel to the major  at. Usually, all comet tails tend to be of the same length. Count once per occurrence. Two comet tails within 200 microns count as one.
 
D3. Carrots
Similar to comet tails in appearance except they are more angular and lack adiscrete head. If present, these features are aligned parallel to the major  at. Usually, any carrots present tend to be of the same length. Count once peroccurrence. Two carrots within 200 microns count as one.
 
 D4. Particles
Particles have the appearance of eyes and if present are usually concentratedat the wafer edges and not within the specied area. If present, count once peroccurrence. Two particles within 200 microns count as one.
 
D5. Silicon droplets
Silicon droplets can appear as either small mounds or depressions in the wafersurface. Normally absent, but if present are largely concentrated at perimeterof wafer. If present, estimate the % of specied area affected.
 
D6. Downfall

 Adherent particles droped during Epi growth.

 

Application of SiC epitaxial wafer

Power factor correction(PFC)

PV inverter and UPS(Uninterrupted power supplies) inverters

Motor drives

Output rectification

Hybrid or electric vehicles

 

SiC Schottky diode with 600V, 650V, 1200V, 1700V, 3300V is available.

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