Bookmark and Share
Home > SiC (Silicon Carbide) Wafers > SiC Substrate
SiC Substrate

SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology.
Item Description

Silicon Carbide Wafers

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher

and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,

established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,

high-temperature device and optoelectronic Devices.  As a professional company invested by the leading manufacturers from the fields of advanced

and high-tech material research and state institutes and China's Semiconductor Lab,we are devoted to continuously

improve the quality of currently substates and develop large size substrates.

 

Here shows detail specification:


SILICON CARBIDE MATERIAL PROPERTIES

Polytype

Single Crystal 4H

Single Crystal 6H

Lattice Parameters

a=3.076 Å

c=10.053 Å

a=3.073 Å

c=15.117 Å

Stacking Sequence

ABCB

ABCACB

Band-gap

3.26 eV

3.03 eV

Density

3.21 · 103 kg/m3

3.21 · 103 kg/m3

Therm. Expansion Coefficient

4-5×10-6/K

4-5×10-6/K

Refraction Index

no = 2.719

ne = 2.777

no = 2.707

ne = 2.755

Dielectric Constant

9.6

9.66

Thermal Conductivity

490 W/mK

490 W/mK

Break-Down Electrical Field

2-4 · 108 V/m

2-4 · 108 V/m

Saturation Drift Velocity

2.0 · 105 m/s

2.0 · 105 m/s

Electron Mobility

800 cm2/V·S

400 cm2/V·S

hole Mobility

115 cm2/V·S

90 cm2/V·S

Mohs Hardness

~9

~9

 

6H N-TYPE SIC, 2″WAFER SPECIFICATION

 

SUBSTRATE PROPERTY

S6H-51-N-PWAM-250 S6H-51-N-PWAM-330 S6H-51-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   6H SiC Substrate

Polytype

6H

Diameter

(50.8 ± 0.38) mm

Thickness

(250 ± 25) μm                  (330 ± 25) μm                  (430 ± 25) μm

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.02 ~ 0.1 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

Surface Orientation

 

On axis

<0001>± 0.5°

Off axis

3.5° toward <11-20>± 0.5°

Primary flat orientation

Parallel {1-100} ± 5°

Primary flat length

16.00 ± 1.70 mm

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

8.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Usable area

≥ 90 %

Edge exclusion

1 mm

     

 

6H SEMI-INSULATING SIC, 2WAFER SPECIFICATION

 

SUBSTRATE PROPERTY

S6H-51-SI-PWAM-250 S6H-51-SI-PWAM-330 S6H-51-SI-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade  6H SEMI Substrate

Polytype

6H

Diameter

(50.8 ± 0.38) mm

Thickness

(250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm

Resistivity (RT)

>1E5 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

Surface Orientation

On axis                         <0001>± 0.5°

Off axis                         3.5° toward <11-20>± 0.5°

Primary flat orientation

Parallel {1-100} ± 5°

Primary flat length

16.00 ± 1.70 mm

Secondary flat orientation                                                Si-face:90° cw. from orientation flat ± 5°

                      C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

8.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Usable area

≥ 90 %

Edge exclusion

1 mm

 

6H N-type or Semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm

6H N-type or Semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm

 

4H N-TYPE SIC, 2″WAFER SPECIFICATION

 

SUBSTRATE PROPERTY

S4H-51-N-PWAM-330              S4H-51-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(50.8 ± 0.38) mm

Thickness

(250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.012 - 0.0028 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

Surface Orientation

 

On axis

<0001>± 0.5°

Off axis

4°or 8° toward <11-20>± 0.5°

Primary flat orientation

Parallel {1-100} ± 5°

Primary flat length

16.00 ± 1.70) mm

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

8.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Usable area

≥ 90 %

Edge exclusion

1 mm

     

 

4H N-TYPE SIC, 3WAFER  SPECIFICATION

 

SUBSTRATE PROPERTY

S4H-76-N-PWAM-330               S4H-76-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(76.2 ± 0.38) mm

Thickness

     (350 ± 25) μm                            (430 ± 25) μm

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.015 - 0.028Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

TTV/Bow /Warp

25μm

Surface Orientation

 

On axis

<0001>± 0.5°

Off axis

4°or 8° toward <11-20>± 0.5°

Primary flat orientation

<11-20>±5.0°

Primary flat length

22.22 mm±3.17mm
0.875″±0.125″

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

11.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Scratch

None

Usable area

≥ 90 %

Edge exclusion

2mm

     

 

4H SEMI-INSULATING SIC, 3WAFER  SPECIFICATION

 

SUBSTRATE PROPERTY

S4H-76-N-PWAM-330               S4H-76-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(76.2 ± 0.38) mm

Thickness

     (350 ± 25) μm                            (430 ± 25) μm

Carrier Type

semi-insulating

Dopant

V

Resistivity (RT)

>1E5 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

TTV/Bow /Warp

25μm

Surface Orientation

 

On axis

<0001>± 0.5°

Off axis

4°or 8° toward <11-20>± 0.5°

Primary flat orientation

<11-20>±5.0°

Primary flat length

22.22 mm±3.17mm
0.875″±0.125″

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

11.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Scratch

None

Usable area

≥ 90 %

Edge exclusion

2mm

     

 

4H N-TYPE SIC, 4WAFER  SPECIFICATION

 

SUBSTRATE PROPERTY

S4H-76-N-PWAM-330               S4H-76-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(76.2 ± 0.38) mm

Thickness

     (350 ± 25) μm                            (430 ± 25) μm

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.015 - 0.028Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

TTV/Bow /Warp

45μm

Surface Orientation

 

On axis

<0001>± 0.5°

Off axis

4°or 8° toward <11-20>± 0.5°

Primary flat orientation

<11-20>±5.0°

Primary flat length

32.50 mm±2.00mm
 

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

18.00 ± 2.00 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Scratch

None

Usable area

≥ 90 %

Edge exclusion

2mm

     

 4H N-type or semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm

4H N-type or semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION:

Thickness:330μm/430μm

 

a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below:

6H/4H N type                       Thickness:330μm/430μm or custom

6H/4H Semi-insulating     Thickness:330μm/430μm or custom

 


Related products:
Prev:SiC Epitaxy