GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic.
Basic Parameters for Wurtzite crystal structure at 300K:
| Breakdown field | ~5 x 106 V cm-1 |
| Mobility electrons | =< 1000 cm2 V-1 s-1 |
| Mobility holes | =< 200 cm2 V-1 s-1 |
| Diffusion coefficient electrons | 25 cm2 s-1 |
| Diffusion coefficient holes | 5 cm2 s-1 |
| Diffusion coefficient holes | 2.6 x 105 m s-1 |
| Diffusion coefficient holes | 9.4 x 104 m s-1 |
| Breakdown field | 3.3 x 106 V cm-1 |
| Conductivity σ | 6÷12 Ω-1 cm-1 |
| Mobility electrons μn | =< 440 cm2 V-1 s-1 |
Physical properties:GaN is stable bandgap semiconductor material with heat capacity and thermal conductivity.It can be deposited in thin film on sapphire or SiC. GaN can de doped with silicon or undoped to n-type and with magnesium to p-type.
Growth Methods:
GaN substrate is grown by MBE,MOCVD, HVPE.
Types:
or SiC
Application:
It can be used to emit brilliant light in the form of light emitting diodes (LEDs) and laser diodes, as well as being the key material for next generation high frequency, high power transistors capable of operating at high temperatures.For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.
Manufacturer for reference:
PAM-XIAMEN is the world’s leading developer of solid-state lighting technology,he offer a full line: Freestanding GaN, GaN epitaxy on Sapphire.GaN based epitaxial wafer (LED Wafer) for LED.
SORAA:produce GaN on GaN LEDs