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CdZnTe monocrystalline wafers

 

 

Xiamen Powerway Advanced Material Co.,Ltd., provide CdZnTe monocrystalline wafers in different size for HgCdTe substrate epitaxy.  And now PAM-XIAMEN offer specification as follows:

 

 

 

S.No.

Parameters

 Detail

1

Undoped Cd1_xZnxTe Single crystal substrates

From wafer to wafer x =0.040± 0.005

On one wafer x =0.040± 0.005

(Twin & micro twins free substrates)

2

Substrates Sizes & Quantity

15mm X 15mm ± 0.05 mm, Quantity --60 Nos.

25mm X 25mm ± 0.05 mm, Quantity --30 Nos

30mm X 30mm ± 0.05 mm, Quantity --30 Nos

Parallelism

<=3 arc minutes

3

Substrate Thickness

1mm ± 10 ~m

Flatness of B Face

< 5 um

4

Surface polishing

A & B Face Chemo-mechanically polished

Mechanically & Chemically

B Face Epi-ready with roughness (Ra) < 2nm

 

(mirror polished surface-Ready to use for MBE Growth)

5

Face Identification

Mark on "A" Face

(All wafers shall be well identified for the A-face)

6

IR Transmission %

> 60% in 2 to 25 iJm wavelength range

7

Substrate Surface Orientation

211

8

Orientation Accuracy

< ± 0.25°

9

Average Etch Pit density

<= 1X10^5cm2(no cellular structure)

10

X-ray DCRC FWHM

< 18 arc sec

11

X-ray DCRC FWHM peak shift from one end of the wafer to other end

< 30 arc sec

12

Tellurium Precipitatellnclusion

Free of Tellurium precipitatellnclusion larger than 2 um (Te ppt density <1 04/cm2 )

 

For more information, please visit our website:www.powerwaywafer.com, send us email at sales@powerwaywafer.com  or powerwaymaterial@gmail.com