Bookmark and Share
Home > News > Distribution of defects and impurities in gallium arsenide wafers after surface gettering
Distribution of defects and impurities in gallium arsenide wafers after surface gettering
 
Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows high-resistivity material to be obtained with the near-uniform distribution both of electron concentration and of minority carrier lifetime in the GaAs wafers with thickness up to 1.6 mm. These in-depth distribution profiles have been first presented. Moreover, low-temperature photoluminescence (PL) of the GaAs wafers has been studied.
 
Source: sciencedirect
 
If you need more information about Distribution of defects and impurities in gallium arsenide wafers after surface gettering,please visit our website:http://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.