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Fz Silicon Wafers

Fz Silicon Wafers

As a leading wafer supplier,we offer FZ (Float Zone) silicon wafers and  CZ (czochralski) silicon wafers for power devices and detector and other applications
Item Description

Fz Silicon Wafers

Silicon wafer is the most common material and widely used for semiconductor and optical applications, including integrated circuits , detector or sensor device , MEMS fabrication, opto-electronic components, and solar cells. PAM-XIAMEN can provide exactly the silicon wafers you need with the good quality and lowest possible price .
Silicon wafers are available in a variety of diameters from 25.4 mm (1 inch) to 300 mm (11.8 inches). Semiconductor fabrication plants are defined by the diameter of wafers that they are tooled to produce. The diameter has gradually increased to improve throughput and reduce cost with the current state-of-the-art fab considered to be 300 mm (12 inch), with the next standard projected to be 450 mm (18 inch). 
 
1-inch (25 mm)
2-inch (51 mm). Thickness 275 µm 
3-inch (76 mm). Thickness 375 µm.
4-inch (100 mm). Thickness 525 µm.
5-inch (130 mm) or 125 mm (4.9 inch). Thickness 625 µm.
150 mm (5.9 inch, usually referred to as "6 inch"). Thickness 675 µm.
200 mm (7.9 inch, usually referred to as "8 inch"). Thickness 725 µm
 
 
Float Zone (FZ) silicon wafers are the high purity alternative to silicon grown by the CZ process. The concentration of light impurities, such as carbon and oxygen, which can be prevalent in CZ silicon, are extremely low with FZ wafers. This difference offers a major advantage for high power devices and unique properties for optical and sensor devices that can not be achieved with CZ wafers. Float Zone wafers can be supplied as Gas Doped (GDFZ) or Neutron Doped (NTDFZ) dependent upon the customer's application and requirements. The available diameters of float zone wafers that are supplied are 51mm,76mm, 100mm and 125mm
 
Float-zone silicon is typically used for power devices and detector applications. It is highly transparent to terahertz radiation, and is usually used to fabricate optical components, such as lenses and windows, for terahertz applications.
 

Wafer Specification

 

 

 

Item

Description

Ingot Parameter

Growing method

FZ

Orientation

<111>

Off-orientation

4±0.5 degree to the nearest <110>

Type/Dopant

P/Boron

Resistivity

10-20 W.cm

RRV

≤15% (Max edge-Cen)/Cen

Wafer Parameter

Diameter

150±0.5 mm

Thickness

675±15 um

Primary Flat Length

57.5±2.5 mm

Primary Flat Orientation

<011>±1 degree

Secondary Flat Length

None

Secondary Flat Orientation

None

TTV

≤5 um

Bow

≤40 um

Warp

≤40 um

Edge Profile

SEMI Standard

Front Surface

Chemical-Mechenical Polishing

LPD

≥0.3 um@15 pcs

Back Surface

Acid Etched

Edge Chips

None

Package

Vacuum Packing; Inner Plastic, Outer Aluminum

 

 

 

Czochralski (CZ) wafers are the most commonly used type of silicon wafer, and are used by both the solar and integrated circuit industry.

 

 

 

Wafer Specification

 

 

 

Item

Description

Ingot Parameter

Growing method

CZ

Orientation

<100>

Type/Dopant

N/Phosphorus

Resistivity

0.1-1 W.cm

Wafer Parameter

Diameter

150±0.2 mm

Thickness

525±15 um

Primary Flat Length

57.5±2.5 mm

Primary Flat Orientation

<110>±1 degree

Secondary Flat Length

None

Secondary Flat Orientation

None

TTV

≤5 um

Bow

≤40 um

Warp

≤40 um

Edge Profile

SEMI Standard

Front Surface

Chemical-Mechenical Polishing

LPD

≥0.5um@≤10 pcs

Back Surface

Chemical-Mechenical Polishing

Edge Chips

None

Package

Vacuum Packing; Inner Plastic, Outer Aluminum

 

 

 

Thermal oxide on silcon with/without Ti layer/Pt layer is available.

 


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