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Si-doped GaN Epitaxial template on sapphire 

 

Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, provide GaN wafer serie,including Si-doped GaN Epitaxial template on sapphire: 

 

GaN Template2"

Specification

Purity

Si-doped GaN Epitaxial template on sapphire

Orientation

-1

Film thickness

>5.0µm ± 0.25µm

Diameter

50.8 ± 0.1mm

Edge exclusion

<1mm

Useable surface area

> 90%

Conduction Type

N-Type

Resisitivity

0.001 - 0.01 Ohm-cm

Carrier Concentration

1E19 /cc

Macro Defect

10 / cm-2

Dislocation Density

< 5E8 / cm2

FWHM of RC for the symmetric (002) reflection

~ 250 arcsec

FWHM of RC for the symmetric (102) reflection

~ 300 arcsec

Surface Finish / Polish

RMS <0.5nm by AFM 10µmX10µm scan

As -Grown

Ga Face

Substrate

Sapphire

(0001) miscut

0.2 deg ± 0.1 deg toward M plane

Thickness of Sapphire

430µm ± 25µm

TTV

10µm

BOW

10µm

Warp

10µm

Polish

One side polished (1sp) with the condition of backsurface is "as-received)

 

Source:PAM-XIAMEN

If you need more information about GaN template on sapphireplease visit our website:http://www.powerwaywafer.com, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com