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SIC Application

SIC Application

Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs device
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SiC Application

Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.

III-V Nitride Deposition

GaN, AlxGa1-xN and InyGa1-yN epitaxial layers on up to SiC substrate or sapphire substrate.

For PAM-XIAMEN Gallium Nitride Epitaxy on Sapphire Templates,please review:

http://www.powerwaywafer.com/GaN-Templates.html

For Gallium Nitride Epitaxy on SiC Templates,which are used to fabrication of blue light emitting diodes and and nearly solar blind UV photodetectors

Optoelectronic Devices

SiC based devices are:

low lattice mismatch forIII-nitride epitaxial layers

high thermal conductivity

monitoring of combustion processes

all sorts of UV-detection

Due to SiC material properties, SiC-based electronics and devices can work in very hostile environment,which can work under high temperature, high power and high radiation conditions

High Power Devices

Due to SiC's properties:

Wide Energy Bandgap (4H-SiC: 3.26eV, 6H-SiC: 3.03eV)

High electrical breakdown field(4H-SiC: 2-4*108 V/m, 6H-SiC: 2-4*108 V/m )

High saturation drift velocity(4H-SiC:2.0*105 m/s, 6H-SiC:2.0*105 m/s)

High thermal conductivity(4H-SiC: 490 W/mK,  6H-SiC: 490 W/mK )

Which are used for fabrication of very high-voltage, high-power devices such as diodes, power transitors, and high power microwave devices.Compared to conventional Si-devices SiC-based power device offers:

faster switching speed

higher voltages

lower parasitic resistances

smaller size

less cooling required due to high-temperature capability

SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can theoretically operate at higher power densities than either GaAs or Si. Higher thermal conductivity combined with wide bandgap and high critical field give SiC semiconductors an advantage when high power is a key desirable device feature.

Currently silicon carbide (SiC) is widely used for high power MMIC

applications. SiC is also used as a substrate for epitaxial

growth of GaN for even higher power MMIC devices

High Temperature Devices

Due to SiC high thermal conductivity,SiC will conductor heat rapidly than other semiconductor materials.

which enables SiC devices to operate at extremely high power levels and still dissipate the large amounts of excess heat generated

High Frequency Power Devices

SiC-based microwave electronics are used for wireless communications and radar

 

 For detail application of SiC substrate, you can read Detail Application of Silicon Carbide .

 


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