1-3.Mohs Hardness
Rough measure of the resistance of a smooth surface to scratching or abrasion, expressed in terms of a scale devised(1812)by the German mineralogist Friedrich Mohs. The Mohs hardness of a mineral is determined by observing whether its surface is scratched by a substance of known or defined hardness.
2-4.Wafer Surface Orientation Denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure. In wafers cut intentionally “off orientation”, the direction of cut is parallel to the primary at, away from the secondary at. Measured with [...]
2-35.Prime Grade Prime Grade:The highest grade of a silicon carbide wafer. SEMI indicates the bulk, surface, and physical properties required to label silicon carbide wafers as “Prime Wafers”.
5-2-2-2 SiC Semiconductor Electrical Properties Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor electrical properties of the 3C, 4H, and 6H SiC polytypes are [...]
1-6.Refraction Index In optics the refractive index (or index of refraction) n of a substance (optical medium) is a number that describes how light, or any other radiation, propagates through that medium. Refractive index of materials varies with the wavelength. This is called dispersion; it causes [...]
5-6-4 SiC High-Power Switching Devices The inherent material properties and basic physics behind the large theoretical benefits of SiC over silicon for power switching devices were discussed Section 5.3.2. Similarly, it was discussed in Section 5.4.5 that crystallographic defects found in SiC wafers and epilayers [...]
3-8. 3C Inclusions Regions where step- ow was interrupted during epi layer growth. Typical regions are generally triangular although more rounded shapes are sometimes seen. Count once per occurrence. Two inclusions within 200 microns count as one.
