5-5-1 Choice of Polytype for Devices
As discussed in Section 4, 4H- and 6H-SiC are the far superior forms of semiconductor device quality SiC commercially available in mass-produced wafer form. Therefore, only 4H- and 6H-SiC device processing methods will be explicitly considered in the rest [...]
2018-06-28meta-author
5-6-2 SiC RF Devices
The main use of SiC RF devices appears to lie in high-frequency solid-state high-power amplification at frequencies from around 600 MHz (UHF-band) to perhaps as high as a few gigahertz (X-band). As discussed in far greater detail in References 5, 6, [...]
2018-06-28meta-author
2-29.Resistivity
The resistance to current flow and movement of electron and hole carries in the silicon carbide. Resistivity is related to the ratio of voltage across the silicon to the current flowing through the silicon carbide per unit volume of silicon carbide. The units for [...]
2018-06-28meta-author
3-4. Step Bunching
Step bunching is visible as a pattern of parallel lines running perpendicular to the major at. If present, estimate the % of speci ed area affected.
2018-06-28meta-author
2-27.BOW
Bow is the deviation of the center point of the median surface of a free, un-clamped wafer from the median surface to the reference plane. Where the reference plane is defined by three corners of equilateral triangle. This definition is based on now obsolete [...]
2018-06-28meta-author
3-3. Dimpling
A texture resembling the surface of a golf ball. Speci ed in % affected area.
2018-06-28meta-author