1″ Silicon Wafer-1

PAM XIAMEN offers 1″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)
Surf. Resistivity
Ωcm
Comment
n-type Si:P [100] 1″ 475 ±10 E/E FZ >500 {1,900-2,400}
n-type Si:P [111] ±0.5° 1″ 280 P/P FZ 2,000-10,000 TTV<5μm
Intrinsic Si:- [100] 1″ 320 P/E FZ >20,000 Prime
Intrinsic Si:- [100] 1″ 500 P/E FZ >20,000 SEMI Prime
Intrinsic Si:- [100] 1″ 160 P/P FZ >10,000 Prime, TTV<8μm
Intrinsic Si:- [100] 0.5″ 12700 C/C FZ >10,000 a set of 4 rods sealed in polyehtylene foil
Intrinsic Si:- [111] ±0.5° 1″ 500 P/P FZ >15,000 SEMI Prime
Intrinsic Si:- [111] ±0.5° 1″ 1000 P/E FZ 14,000-30,000 Cassettes of 7, 6, 6 wafers
Intrinsic Si:- [111] ±2° 1″ 27870 C/C FZ >10,000 Single Crystal Silicon Rod, 0.39″ diameter × 27.87±0.1mm
p-type Si:B [100] 1″ 300 P/P 4-6 SEMI Prime
p-type Si:B [100] 1″ 100 ±15 P/P 1-10 Prime, in sealed bags of 5 wafers.
p-type Si:B [100] 24mm 300 P/E 1-100 Prime
p-type Si:B [100] 1″ 300 P/E 1-10 Prime,
p-type Si:B [100] 24.3mm 300 P/E 1-10 {1.5-1.7} Prime
p-type Si:B [100] 1″ 300 P/E 1-10 Prime,
p-type Si:B [100] 1″ 300 P/E 1-10 SEMI Prime
p-type Si:B [100] 1″ 525 ±10 P/E 1-30 Prime, TTV<5μm, Cassettes of 20 and 8 wafers
p-type Si:B [100] 1″ 525 ±10 P/E 1-30 Test, TTV<5μm
p-type Si:B [100] 1″ 1000 P/E 1-30 SEMI Prime
p-type Si:B [100] 1″ 3000 P/E 1-50 Prime, Individual cst, Group of 13 wafers
p-type Si:B [100] 1″ 275 P/E 0.015-0.020 SEMI Prime

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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