(10-11) Plane N-GaN Freestanding GaN Substrate

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(10-11) Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (10-11) Plane N-GaN Freestanding GaN Substrate:

Item PAM-FS-GAN(10-11)-N
Dimension 5 x 10 mm2 or 5 x 20 mm2
Thickness 380+/-50um
Orientation (10-11) plane off angle toward A-axis 0 ±0.5°

(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type N-type / Si Doped
Resistivity (300K) < 0.05 Ω·cm
TTV ≤ 10 µm
BOW BOW ≤ 10 µm
Surface Roughness Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density ≤  5 x 10 6cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-08-20

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