Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
GaN freestanding substrate was obtained by hydride vapor phase epitaxy directly on sapphire with porous network interlayer. The morphologies of Ga-face and N-face of freestanding GaN substrate were analyzed [...]
As a leading manufacturer of semiconductor materials, PAM-XIAMEN aims to supply high quality semiconductor wafers including substrate and epitaxy of SiC, GaN, GaAs and other materials, supporting scientists and engineers around the world to develop and innovate technology. Please view https://www.powerwaywafer.com/products.html for more wafers.
The list [...]
2022-08-26meta-author
PAM XIAMEN offers LiTaO3 Lithium Tantalate Crystal.
Major capability parameter
Material purity
>99.995%
Crystal structure
M6
Unit cell constant
a=5.154Å c=13.783 Å
Melt point(℃)
1650
Density
7.45(g/cm3)
Hardness
5.5~6(mohs)
Color
Colorless
Index of refraction
no=2.176 ne=2.180 (633nm)
Through scope
0.4~5.0mm
Resistance coefficient
1015wm
Dielectric [...]
2019-03-13meta-author
PAM-01C is a low noise and high gain charge sensitive preamplifier. It can be used as a key part for semiconductor detector, such as CZT and Si, and other detecting signal readout.
1. Charge Sensitive Pre-amplifier Chip Specifications Comparison
Brands
(PAM-01C)
Gremat(PAM-110)
Dimensions
24×15×3 mm3
22.7×21×3.4 mm3
Weight
5g
2.5g
Power
<0.3W
0.66W
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±12V
±12V
Operation temperature
-20℃-+40℃
-20℃-+40℃
Equivalent noise level
ENC:180e-
ENC:260e-
Falling [...]
2019-04-25meta-author
PAM XIAMEN offers ITO coated(sodalime) glass.
ITO Physical properties
Melting point
1800–2200 K (1526-1926 °C) (2800–3500 °F)
Density
7120–7160 kg/m3 at 293 K
Color (in powder form)
Pale yellow to greenish yellow, depending on SnO2 concentration
Values vary with composition. SI units and STP are used except where noted.
ITO Coated Glass, 10mmx10mmx 0.7mm
ITO Coated Glass Substrate 10mm x 10 mm x [...]
2019-04-28meta-author
Unintentionally doped GaN were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The high-resolution X-ray diffraction (HRXRD) and Lehighton contactless sheet resistance measuring systems were employed to characterize the quality and sheet resistance (Rs) of GaN epilayer. The threading dislocation density [...]