PAM-XIAMEN can offer the diamond heat sink. Due to its high thermal conductivity of 1500 W/m·K, diamond is a good choice as a microchannel heat sink material. The diamond heat sink compound can withstand a high-density heat load up to 267W/cm2, achieving high cooling performance [...]
2021-04-29meta-author
SiC material has high displacement threshold energy and wide band gap, which enables the detector to work under high temperature and high radiation field. It can be applied to neutron fluence/energy spectrum measurement in strong radiation field, neutron fluence/energy spectrum measurement in high temperature [...]
2022-09-06meta-author
InGaAs/InAlAs heterostructure is realized on GaAs substrate. This GaAs-based metamorphic high electron mobility transistor (mHEMT) heterostructure can reduce the stress at the interface between heterostructure and GaAs through the gradual change of In composition. Such a mHEMT structure can provide device performance that is [...]
PAM XIAMEN offers Yttrium Stabilized Zirconia (YSZ) Single Crystals Substrate.
Main Parameters
Crystal structure
M3
Unit cell constant
a=5.147 Å
Melt point(℃)
2700
Density(g/cm3)
6
Hardness
8-8.5(mohs)
Purity
99.99%
Thermal expansion(/℃)
10.3×10-6
Dielectric constants
ε=27
Growth method
arcs
Size
10×3,10×5,10×10,15×15,,20×15,20×20
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness
0.5mm,1.0mm
Polishing
Single or double
Crystal orientation
<001>±0.5º
redirection precision
±0.5°
Redirection the edge:
2°(special in 1°)
Angle of crystalline
Special size and orientation are available upon [...]
2019-03-15meta-author
PAM-XIAMEN can offer AlGaAs / GaAs p-HEMT (pseudomorphic high electron mobility transistor) heterostructure epitaxial wafer grown by MBE or MOCVD process. The heterostructure has a high-mobility conduction channel formed by two-dimensional electron gas, which is an ideal material for wireless applications. The line width [...]
2021-12-07meta-author
PAM XIAMEN offers SiO2 Silica Quartz Single Crystal.
Major capability parameter
Growth method
hydro-thermal method
Crystal Structure
M6
Unit cell constant
a=4.914Å c=5.405 Å
Melt point(℃)
1610℃
Density
2.684g/cm3
Hardness
7(mohs)
Thermal conductivity
0.0033cal/cm℃
Planned constant
1200uv/℃(300℃)
Index of refraction
1.544
Thermal expansion
α11:13.71×106 / ℃ α33:7.48×106 /℃
Frequency constant
1661(kHz/mm)
Crystal orientation
Y、X or Z,30º~42.75 º ±5
Polishing
Single or double Ra<10Å
Thickness
0.5mm±0.05mm TTV<5um
Diameter
Φ2″(50.8mm)、Φ3″(76.2mm)、Φ4″(100mm)±0.2mm
main positioning:22±1.5mm (Φ3″) 32±3.0 (Φ4″)
Secondary positioning :10mm±1.5mm
For more information, please [...]
2019-03-15meta-author