(100) Oriented Silicon Wafers-2

(100) Oriented Silicon Wafers-2

PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.

ItemMaterialOrient.Diam
(mm)
Thck
(μm)
Surf.Resistivity
Ωcm
Comment
PAM2841Intrinsic Si:-[100]4″300P/EFZ 16,000-20,000SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect
PAM2842Intrinsic Si:-[100]4″500P/EFZ 13,000-20,000SEMI Prime, 1Flat, Empak cst, TTV<5μm, Front-side Prime polish, Back-side light polish
PAM2843Intrinsic Si:-[100]4″300P/PFZ >10,000SEMI Prime, 1Flat, Empak cst
PAM2844Intrinsic Si:-[100]4″500P/EFZ >10,000SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2845Intrinsic Si:-[100]4″615 ±10C/CFZ >10,000SEMI Prime, 1Flat, Empak cst
PAM2846Intrinsic Si:-[100]4″800C/CFZ >10,000SEMI Prime, 1Flat, Empak cst
PAM2847Intrinsic Si:-[100]4″1000P/PFZ >2,000SEMI Prime, 1Flat, Empak cst
PAM2848p-type Si:B[100]4″1000P/P200-700Prime, NO Flats, Empak cst
PAM2849p-type Si:B[100]4″3000P/E46-50SEMI Prime, 1Flat, Individual cst, Group of 6 wafers
PAM2850p-type Si:B[100]4″500P/P10–20SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly
PAM2851p-type Si:B[100]4″515 ±10P/P10–20SEMI Prime, 2Flats, Empak cst
PAM2852p-type Si:B[100]4″750P/P10–20SEMI Prime, 2Flats, Empak cst
PAM2853p-type Si:B[100]4″1000P/P10–20SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2854p-type Si:B[100]4″1000P/P10–20SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2855p-type Si:B[100]4″300P/P8–12SEMI TEST – Front-side badly polished, 2Flats, Empak cst
PAM2856p-type Si:B[100]4″610 ±10E/E8–121Flat at [100], Empak cst
PAM2857p-type Si:B[100]4″300P/P5–10SEMI Test, 2Flats, Empak cst, Scratched and unsealed. Can be re-polished for extra fee
PAM2858p-type Si:B[100]4″300P/P5-10 {6-7}SEMI Prime, 2Flats, Empak cst, TTV<9μm, Cassettes of 9 + 15 wafers
PAM2859p-type Si:B[100]4″300P/P5–10SEMI Prime, 2Flats, Empak cst
PAM2860p-type Si:B[100]4″380P/E5–10SEMI TEST (in Opened cassette), 2Flats, Empak cst
PAM2861p-type Si:B[100]4″380P/E5–10SEMI Prime, 2Flats, Empak cst
PAM2862p-type Si:B[100]4″380P/E5–10SEMI TEST (with bad surface), 1Flat, Empak cst
PAM2863p-type Si:B[100]4″380P/E5–10SEMI Prime, 1Flat, hard cst, Back-side slightly darker than normal
PAM2864p-type Si:B[100]4″380P/E5–10SEMI Test, 2Flats, Empak cst, Dirty wafers, can be cleaned for extra fee
PAM2865p-type Si:B[100]4″380BROKEN5–10Broken P/E Wafers, 1Flat, in Empak
PAM2866p-type Si:B[100]4″380BROKEN5–10Broken P/E Wafers, 2Flats, in Empak
PAM2867p-type Si:B[100]4″380BROKEN5–10Broken (largest piece is ~30%), 1Flat, in Empak
PAM2868p-type Si:B[100]4″525P/E5–10SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2869p-type Si:B[100]4″525P/E5–10SEMI, 2Flats, Empak cst
PAM2870p-type Si:B[100]4″525P/E5–10SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm, Cassettes of 4, 6 and 11 wafers
PAM2871p-type Si:B[100]4″525P/E5–10SEMI Test, Dirty and scratched, 2Flats, Empak cst
PAM2872p-type Si:B[100]4″1000P/E5–10SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2873p-type Si:B[100]4″525P/E4.1-4.5Prime, NO Flats, Empak cst
PAM2874p-type Si:B[100]4″250 ±10P/P1-5 {4.1-4.7}SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2875p-type Si:B[100-4.0°] ±0.5°4″275P/E1–30SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2876p-type Si:B[100]4″300P/P1–10 ohm-cmSEMI Prime, 2Flats, Empak cst
PAM2877p-type Si:B[100-4° towards[110]] ±0.5°4″300P/E1–10 ohm-cmSEMI Test, 2Flats, Empak cst, Wafers with pits
PAM2878p-type Si:B[100]4″381 ±5P/P1–30SEMI Prime, 2Flats, TTV<5μm, Bow<8μm, Warp<20μm, Empak cst
PAM2879p-type Si:B[100]4″475P/E1–10 ohm-cmSEMI Prime, 2Flats, Empak cst, Epi edges for 150μm epi growth
PAM2880p-type Si:B[100]4″500P/P1–50SEMI Prime, 2Flats, in Empak cst, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc per ASTM F1188.
PAM2881p-type Si:B[100]4″500P/P1–50SEMI Prime, 2Flats, in Empak cst, Carbon content ~1.0ppma per ASTM F1319.
PAM2882p-type Si:B[100]4″500P/P1–50SEMI Prime, 2Flats, in Empak cst, Carbon content ~0.2ppma per ASTM F1319.
PAM2883p-type Si:B[100]4″500P/P1–50SEMI Prime, 2Flats, in Empak cst, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc per ASTM F1188.
PAM2884p-type Si:B[100]4″500P/P1–50SEMI Prime, 2Flats, in Empak cst, Carbon content (0.9-1.1)E16/cc per ASTM F1319, Oxygen content (8.4-8.0)E17/cc per ASTM F1188.

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

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