(100) Oriented Silicon Wafers-2

(100) Oriented Silicon Wafers-2

PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.

Item Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Resistivity
Ωcm		 Comment
PAM2841 Intrinsic Si:- [100] 4″ 300 P/E FZ 16,000-20,000 SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect
PAM2842 Intrinsic Si:- [100] 4″ 500 P/E FZ 13,000-20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Front-side Prime polish, Back-side light polish
PAM2843 Intrinsic Si:- [100] 4″ 300 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
PAM2844 Intrinsic Si:- [100] 4″ 500 P/E FZ >10,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2845 Intrinsic Si:- [100] 4″ 615 ±10 C/C FZ >10,000 SEMI Prime, 1Flat, Empak cst
PAM2846 Intrinsic Si:- [100] 4″ 800 C/C FZ >10,000 SEMI Prime, 1Flat, Empak cst
PAM2847 Intrinsic Si:- [100] 4″ 1000 P/P FZ >2,000 SEMI Prime, 1Flat, Empak cst
PAM2848 p-type Si:B [100] 4″ 1000 P/P 200-700 Prime, NO Flats, Empak cst
PAM2849 p-type Si:B [100] 4″ 3000 P/E 46-50 SEMI Prime, 1Flat, Individual cst, Group of 6 wafers
PAM2850 p-type Si:B [100] 4″ 500 P/P 10–20 SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly
PAM2851 p-type Si:B [100] 4″ 515 ±10 P/P 10–20 SEMI Prime, 2Flats, Empak cst
PAM2852 p-type Si:B [100] 4″ 750 P/P 10–20 SEMI Prime, 2Flats, Empak cst
PAM2853 p-type Si:B [100] 4″ 1000 P/P 10–20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2854 p-type Si:B [100] 4″ 1000 P/P 10–20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2855 p-type Si:B [100] 4″ 300 P/P 8–12 SEMI TEST – Front-side badly polished, 2Flats, Empak cst
PAM2856 p-type Si:B [100] 4″ 610 ±10 E/E 8–12 1Flat at [100], Empak cst
PAM2857 p-type Si:B [100] 4″ 300 P/P 5–10 SEMI Test, 2Flats, Empak cst, Scratched and unsealed. Can be re-polished for extra fee
PAM2858 p-type Si:B [100] 4″ 300 P/P 5-10 {6-7} SEMI Prime, 2Flats, Empak cst, TTV<9μm, Cassettes of 9 + 15 wafers
PAM2859 p-type Si:B [100] 4″ 300 P/P 5–10 SEMI Prime, 2Flats, Empak cst
PAM2860 p-type Si:B [100] 4″ 380 P/E 5–10 SEMI TEST (in Opened cassette), 2Flats, Empak cst
PAM2861 p-type Si:B [100] 4″ 380 P/E 5–10 SEMI Prime, 2Flats, Empak cst
PAM2862 p-type Si:B [100] 4″ 380 P/E 5–10 SEMI TEST (with bad surface), 1Flat, Empak cst
PAM2863 p-type Si:B [100] 4″ 380 P/E 5–10 SEMI Prime, 1Flat, hard cst, Back-side slightly darker than normal
PAM2864 p-type Si:B [100] 4″ 380 P/E 5–10 SEMI Test, 2Flats, Empak cst, Dirty wafers, can be cleaned for extra fee
PAM2865 p-type Si:B [100] 4″ 380 BROKEN 5–10 Broken P/E Wafers, 1Flat, in Empak
PAM2866 p-type Si:B [100] 4″ 380 BROKEN 5–10 Broken P/E Wafers, 2Flats, in Empak
PAM2867 p-type Si:B [100] 4″ 380 BROKEN 5–10 Broken (largest piece is ~30%), 1Flat, in Empak
PAM2868 p-type Si:B [100] 4″ 525 P/E 5–10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2869 p-type Si:B [100] 4″ 525 P/E 5–10 SEMI, 2Flats, Empak cst
PAM2870 p-type Si:B [100] 4″ 525 P/E 5–10 SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm, Cassettes of 4, 6 and 11 wafers
PAM2871 p-type Si:B [100] 4″ 525 P/E 5–10 SEMI Test, Dirty and scratched, 2Flats, Empak cst
PAM2872 p-type Si:B [100] 4″ 1000 P/E 5–10 SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2873 p-type Si:B [100] 4″ 525 P/E 4.1-4.5 Prime, NO Flats, Empak cst
PAM2874 p-type Si:B [100] 4″ 250 ±10 P/P 1-5 {4.1-4.7} SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2875 p-type Si:B [100-4.0°] ±0.5° 4″ 275 P/E 1–30 SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2876 p-type Si:B [100] 4″ 300 P/P 1–10 ohm-cm SEMI Prime, 2Flats, Empak cst
PAM2877 p-type Si:B [100-4° towards[110]] ±0.5° 4″ 300 P/E 1–10 ohm-cm SEMI Test, 2Flats, Empak cst, Wafers with pits
PAM2878 p-type Si:B [100] 4″ 381 ±5 P/P 1–30 SEMI Prime, 2Flats, TTV<5μm, Bow<8μm, Warp<20μm, Empak cst
PAM2879 p-type Si:B [100] 4″ 475 P/E 1–10 ohm-cm SEMI Prime, 2Flats, Empak cst, Epi edges for 150μm epi growth
PAM2880 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc per ASTM F1188.
PAM2881 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content ~1.0ppma per ASTM F1319.
PAM2882 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content ~0.2ppma per ASTM F1319.
PAM2883 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc per ASTM F1188.
PAM2884 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content (0.9-1.1)E16/cc per ASTM F1319, Oxygen content (8.4-8.0)E17/cc per ASTM F1188.

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

2019-02-22

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