PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item | Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
PAM2841 | Intrinsic Si:- | [100] | 4″ | 300 | P/E | FZ 16,000-20,000 | SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect |
PAM2842 | Intrinsic Si:- | [100] | 4″ | 500 | P/E | FZ 13,000-20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Front-side Prime polish, Back-side light polish |
PAM2843 | Intrinsic Si:- | [100] | 4″ | 300 | P/P | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
PAM2844 | Intrinsic Si:- | [100] | 4″ | 500 | P/E | FZ >10,000 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2845 | Intrinsic Si:- | [100] | 4″ | 615 ±10 | C/C | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
PAM2846 | Intrinsic Si:- | [100] | 4″ | 800 | C/C | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
PAM2847 | Intrinsic Si:- | [100] | 4″ | 1000 | P/P | FZ >2,000 | SEMI Prime, 1Flat, Empak cst |
PAM2848 | p-type Si:B | [100] | 4″ | 1000 | P/P | 200-700 | Prime, NO Flats, Empak cst |
PAM2849 | p-type Si:B | [100] | 4″ | 3000 | P/E | 46-50 | SEMI Prime, 1Flat, Individual cst, Group of 6 wafers |
PAM2850 | p-type Si:B | [100] | 4″ | 500 | P/P | 10–20 | SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly |
PAM2851 | p-type Si:B | [100] | 4″ | 515 ±10 | P/P | 10–20 | SEMI Prime, 2Flats, Empak cst |
PAM2852 | p-type Si:B | [100] | 4″ | 750 | P/P | 10–20 | SEMI Prime, 2Flats, Empak cst |
PAM2853 | p-type Si:B | [100] | 4″ | 1000 | P/P | 10–20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2854 | p-type Si:B | [100] | 4″ | 1000 | P/P | 10–20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2855 | p-type Si:B | [100] | 4″ | 300 | P/P | 8–12 | SEMI TEST – Front-side badly polished, 2Flats, Empak cst |
PAM2856 | p-type Si:B | [100] | 4″ | 610 ±10 | E/E | 8–12 | 1Flat at [100], Empak cst |
PAM2857 | p-type Si:B | [100] | 4″ | 300 | P/P | 5–10 | SEMI Test, 2Flats, Empak cst, Scratched and unsealed. Can be re-polished for extra fee |
PAM2858 | p-type Si:B | [100] | 4″ | 300 | P/P | 5-10 {6-7} | SEMI Prime, 2Flats, Empak cst, TTV<9μm, Cassettes of 9 + 15 wafers |
PAM2859 | p-type Si:B | [100] | 4″ | 300 | P/P | 5–10 | SEMI Prime, 2Flats, Empak cst |
PAM2860 | p-type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI TEST (in Opened cassette), 2Flats, Empak cst |
PAM2861 | p-type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI Prime, 2Flats, Empak cst |
PAM2862 | p-type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI TEST (with bad surface), 1Flat, Empak cst |
PAM2863 | p-type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI Prime, 1Flat, hard cst, Back-side slightly darker than normal |
PAM2864 | p-type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI Test, 2Flats, Empak cst, Dirty wafers, can be cleaned for extra fee |
PAM2865 | p-type Si:B | [100] | 4″ | 380 | BROKEN | 5–10 | Broken P/E Wafers, 1Flat, in Empak |
PAM2866 | p-type Si:B | [100] | 4″ | 380 | BROKEN | 5–10 | Broken P/E Wafers, 2Flats, in Empak |
PAM2867 | p-type Si:B | [100] | 4″ | 380 | BROKEN | 5–10 | Broken (largest piece is ~30%), 1Flat, in Empak |
PAM2868 | p-type Si:B | [100] | 4″ | 525 | P/E | 5–10 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2869 | p-type Si:B | [100] | 4″ | 525 | P/E | 5–10 | SEMI, 2Flats, Empak cst |
PAM2870 | p-type Si:B | [100] | 4″ | 525 | P/E | 5–10 | SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm, Cassettes of 4, 6 and 11 wafers |
PAM2871 | p-type Si:B | [100] | 4″ | 525 | P/E | 5–10 | SEMI Test, Dirty and scratched, 2Flats, Empak cst |
PAM2872 | p-type Si:B | [100] | 4″ | 1000 | P/E | 5–10 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
PAM2873 | p-type Si:B | [100] | 4″ | 525 | P/E | 4.1-4.5 | Prime, NO Flats, Empak cst |
PAM2874 | p-type Si:B | [100] | 4″ | 250 ±10 | P/P | 1-5 {4.1-4.7} | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2875 | p-type Si:B | [100-4.0°] ±0.5° | 4″ | 275 | P/E | 1–30 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
PAM2876 | p-type Si:B | [100] | 4″ | 300 | P/P | 1–10 ohm-cm | SEMI Prime, 2Flats, Empak cst |
PAM2877 | p-type Si:B | [100-4° towards[110]] ±0.5° | 4″ | 300 | P/E | 1–10 ohm-cm | SEMI Test, 2Flats, Empak cst, Wafers with pits |
PAM2878 | p-type Si:B | [100] | 4″ | 381 ±5 | P/P | 1–30 | SEMI Prime, 2Flats, TTV<5μm, Bow<8μm, Warp<20μm, Empak cst |
PAM2879 | p-type Si:B | [100] | 4″ | 475 | P/E | 1–10 ohm-cm | SEMI Prime, 2Flats, Empak cst, Epi edges for 150μm epi growth |
PAM2880 | p-type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc per ASTM F1188. |
PAM2881 | p-type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, in Empak cst, Carbon content ~1.0ppma per ASTM F1319. |
PAM2882 | p-type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, in Empak cst, Carbon content ~0.2ppma per ASTM F1319. |
PAM2883 | p-type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc per ASTM F1188. |
PAM2884 | p-type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (0.9-1.1)E16/cc per ASTM F1319, Oxygen content (8.4-8.0)E17/cc per ASTM F1188. |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.