(100) Oriented Silicon Wafers-4

PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.

Item Material Orient. Diam
(mm)
Thck
(μm)
Surf. Resistivity
Ωcm
Comment
PAM2929 n-type Si:P [100] 4″ 525 P/E 43657 SEMI Prime, 2Flats, Empak cst
PAM2930 n-type Si:P [100] 4″ 525 P/E 43657 SEMI Prime, 2Flats, Empak cst
PAM2931 n-type Si:P [100] 4″ 224 P/E 5–10 SEMI Flats (two), Empak cst, Cassette of 12 + 13 wafers
PAM2932 n-type Si:P [100] 4″ 224 BROKEN 5–10 SEMI Test, 2Flats, Empak cst
PAM2933 n-type Si:P [100] 4″ 500 P/P 3–6 SEMI Prime, 2Flats, Empak cst
PAM2934 n-type Si:P [100] 4″ 350 ±10 P/P 3–5 SEMI Prime, 2Flats, Empak cst
PAM2935 n-type Si:P [100] 4″ 350 P/P 3–5 SEMI Test, 2Flats, Empak cst, Haze, pits, scratches
PAM2936 n-type Si:P [100] 4″ 450 C/C 3–5 SEMI Prime, 2Flats, Empak cst
PAM2937 n-type Si:P [100] 4″ 525 P/E 3–9 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2938 n-type Si:P [100] 4″ 500 ±10 P/P 43501 SEMI TEST (wafers have spots resembling water splashes, which do not come off), 2Flats, in hard cassettes of 4, 5 & 5 wafers
PAM2939 n-type Si:P [100] 4″ 525 ±10 P/P 43502 SEMI Prime, 1Flat, Empak cst
PAM2940 n-type Si:P [100] 4″ 250 ±5 P/P 1-100 SEMI Prime, TTV<3μm, Empak cst
PAM2941 n-type Si:P [100] 4″ 280 ±2 P/P 1–10 ohm-cm SEMI Prime, 1Flat, Empak cst, TTV<2μm
PAM2942 n-type Si:P [100] 4″ 280 P/P 1–5 SEMI Prime, 2Flats, Empak cst
PAM2943 n-type Si:P [100] ±0.2° 4″ 400 ±10 P/P 1–3 SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2944 n-type Si:P [100] 4″ 400 ±10 P/P 1–10 ohm-cm SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2945 n-type Si:P [100] ±1° 4″ 400 ±10 P/P 1–10 ohm-cm SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2946 n-type Si:P [100] ±1° 4″ 400 ±10 P/P 1–10 ohm-cm SEMI Test, 2Flats, Empak cst, TTV<5μm
PAM2947 n-type Si:P [100] 4″ 400 P/E 43471 SEMI Prime, 2Flats, Empak cst
PAM2948 n-type Si:P [100] ±1° 4″ 465 ±10 E/E 1–3 SEMI, 1Flat, Empak cst
PAM2949 n-type Si:P [100] 4″ 500 ±10 P/P 1-100 SEMI, 2Flats, Empak cst
PAM2950 n-type Si:P [100] 4″ 10000 E/E 1-100 SEMI Test, 2Flats, Individual cst
PAM2951 n-type Si:P [100] 4″ 525 P/E 0.3-0.5 SEMI Prime, 2Flats, Empak cst
PAM2952 n-type Si:P [100] 4″ 525 P/E 0.3-0.5 SEMI Prime, 2Flats, Empak cst
PAM2953 n-type Si:P [100] 4″ 300 P/E 0.29-0.31 SEMI Prime, 2Flats, Empak cst
PAM2954 n-type Si:P [100] 4″ 200 P/P 0.10-0.15 SEMI Test, 2Flats, Empak cst, Not sealed both sides scratched
PAM2955 n-type Si:P [100] 4″ 200 P/P 0.10-0.15 SEMI Test, 2Flats, Empak cst, Both sides with scratches
PAM2956 n-type Si:P [100] 4″ 200 P/E 0.10-0.15 SEMI Prime, 2Flats, Empak cst, Front-side Prime, Back-side Test grade polish
PAM2957 n-type Si:Sb [100-6° towards[110]] ±0.5° 4″ 525 P/E 0.015-0.020 SEMI Prime, 2Flats, Empak cst
PAM2958 n-type Si:Sb [100] 4″ 305 ±3 P/P 0.010-0.025 SEMI Prime, 2Flats, Empak cst, TTV<1μm
PAM2959 n-type Si:Sb [100] 4″ 525 P/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst
PAM2960 n-type Si:Sb [100] 4″ 525 P/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst
PAM2961 n-type Si:As [100] 4″ 525 P/E 0.0025-0.0035 SEMI Prime, 2Flats, Empak cst
PAM2962 n-type Si:As [100] 4″ 525 P/E 0.0025-0.0035 SEMI Prime, 2Flats, Empak cst
PAM2963 n-type Si:As [100] 4″ 545 E/E 0.002-0.004 SEMI, 1Flat, Empak cst
PAM2964 n-type Si:As [100] 4″ 525 PlyAP/E 0.001-0.005 With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst,
PAM2965 n-type Si:As [100] 4″ 525 P/P 0.001-0.005 SEMI Prime, 1Flat, Empak cst
PAM2966 n-type Si:As [100] 4″ 525 P/E 0.001-0.005 SEMI Test (Chipped edge), 2Flats, Empak cst
PAM2967 n-type Si:As [100] 4″ 525 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst
PAM2968 n-type Si:As [100] 4″ 550 ±10 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst
PAM2969 p-type Si:B [100] 4″ 380 OxP/EOx 5–10 SEMI Prime, 1Flat, Thermal Oxide 2.2±0.2μm thick
PAM2970 n-type Si:P [100] 4″ 500 P/P FZ >5,000 Prime, NO Flats, Empak cst
PAM2971 n-type Si:P [100] 4″ 800 P/P FZ 2,000-3,000 SEMI Prime, 1Flat, TTV<5μm, Empak cst
PAM2972 n-type Si:P [100] 4″ 800 P/P FZ 2,000-3,000 SEMI Prime, 1Flat at [100], TTV<5μm, Empak cst

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

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