PAM XIAMEN offers (100) orientation Silicon Substrates.

Below is just a small selection. Let us know if you can use or if we can quote you on another spec.

Item | Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |

PAM2929 | n-type Si:P | [100] | 4″ | 525 | P/E | 43657 | SEMI Prime, 2Flats, Empak cst |

PAM2930 | n-type Si:P | [100] | 4″ | 525 | P/E | 43657 | SEMI Prime, 2Flats, Empak cst |

PAM2931 | n-type Si:P | [100] | 4″ | 224 | P/E | 5–10 | SEMI Flats (two), Empak cst, Cassette of 12 + 13 wafers |

PAM2932 | n-type Si:P | [100] | 4″ | 224 | BROKEN | 5–10 | SEMI Test, 2Flats, Empak cst |

PAM2933 | n-type Si:P | [100] | 4″ | 500 | P/P | 3–6 | SEMI Prime, 2Flats, Empak cst |

PAM2934 | n-type Si:P | [100] | 4″ | 350 ±10 | P/P | 3–5 | SEMI Prime, 2Flats, Empak cst |

PAM2935 | n-type Si:P | [100] | 4″ | 350 | P/P | 3–5 | SEMI Test, 2Flats, Empak cst, Haze, pits, scratches |

PAM2936 | n-type Si:P | [100] | 4″ | 450 | C/C | 3–5 | SEMI Prime, 2Flats, Empak cst |

PAM2937 | n-type Si:P | [100] | 4″ | 525 | P/E | 3–9 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |

PAM2938 | n-type Si:P | [100] | 4″ | 500 ±10 | P/P | 43501 | SEMI TEST (wafers have spots resembling water splashes, which do not come off), 2Flats, in hard cassettes of 4, 5 & 5 wafers |

PAM2939 | n-type Si:P | [100] | 4″ | 525 ±10 | P/P | 43502 | SEMI Prime, 1Flat, Empak cst |

PAM2940 | n-type Si:P | [100] | 4″ | 250 ±5 | P/P | 1-100 | SEMI Prime, TTV<3μm, Empak cst |

PAM2941 | n-type Si:P | [100] | 4″ | 280 ±2 | P/P | 1–10 ohm-cm | SEMI Prime, 1Flat, Empak cst, TTV<2μm |

PAM2942 | n-type Si:P | [100] | 4″ | 280 | P/P | 1–5 | SEMI Prime, 2Flats, Empak cst |

PAM2943 | n-type Si:P | [100] ±0.2° | 4″ | 400 ±10 | P/P | 1–3 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |

PAM2944 | n-type Si:P | [100] | 4″ | 400 ±10 | P/P | 1–10 ohm-cm | SEMI Prime, 2Flats, Empak cst, TTV<5μm |

PAM2945 | n-type Si:P | [100] ±1° | 4″ | 400 ±10 | P/P | 1–10 ohm-cm | SEMI Prime, 2Flats, Empak cst, TTV<5μm |

PAM2946 | n-type Si:P | [100] ±1° | 4″ | 400 ±10 | P/P | 1–10 ohm-cm | SEMI Test, 2Flats, Empak cst, TTV<5μm |

PAM2947 | n-type Si:P | [100] | 4″ | 400 | P/E | 43471 | SEMI Prime, 2Flats, Empak cst |

PAM2948 | n-type Si:P | [100] ±1° | 4″ | 465 ±10 | E/E | 1–3 | SEMI, 1Flat, Empak cst |

PAM2949 | n-type Si:P | [100] | 4″ | 500 ±10 | P/P | 1-100 | SEMI, 2Flats, Empak cst |

PAM2950 | n-type Si:P | [100] | 4″ | 10000 | E/E | 1-100 | SEMI Test, 2Flats, Individual cst |

PAM2951 | n-type Si:P | [100] | 4″ | 525 | P/E | 0.3-0.5 | SEMI Prime, 2Flats, Empak cst |

PAM2952 | n-type Si:P | [100] | 4″ | 525 | P/E | 0.3-0.5 | SEMI Prime, 2Flats, Empak cst |

PAM2953 | n-type Si:P | [100] | 4″ | 300 | P/E | 0.29-0.31 | SEMI Prime, 2Flats, Empak cst |

PAM2954 | n-type Si:P | [100] | 4″ | 200 | P/P | 0.10-0.15 | SEMI Test, 2Flats, Empak cst, Not sealed both sides scratched |

PAM2955 | n-type Si:P | [100] | 4″ | 200 | P/P | 0.10-0.15 | SEMI Test, 2Flats, Empak cst, Both sides with scratches |

PAM2956 | n-type Si:P | [100] | 4″ | 200 | P/E | 0.10-0.15 | SEMI Prime, 2Flats, Empak cst, Front-side Prime, Back-side Test grade polish |

PAM2957 | n-type Si:Sb | [100-6° towards[110]] ±0.5° | 4″ | 525 | P/E | 0.015-0.020 | SEMI Prime, 2Flats, Empak cst |

PAM2958 | n-type Si:Sb | [100] | 4″ | 305 ±3 | P/P | 0.010-0.025 | SEMI Prime, 2Flats, Empak cst, TTV<1μm |

PAM2959 | n-type Si:Sb | [100] | 4″ | 525 | P/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |

PAM2960 | n-type Si:Sb | [100] | 4″ | 525 | P/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |

PAM2961 | n-type Si:As | [100] | 4″ | 525 | P/E | 0.0025-0.0035 | SEMI Prime, 2Flats, Empak cst |

PAM2962 | n-type Si:As | [100] | 4″ | 525 | P/E | 0.0025-0.0035 | SEMI Prime, 2Flats, Empak cst |

PAM2963 | n-type Si:As | [100] | 4″ | 545 | E/E | 0.002-0.004 | SEMI, 1Flat, Empak cst |

PAM2964 | n-type Si:As | [100] | 4″ | 525 | PlyAP/E | 0.001-0.005 | With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst, |

PAM2965 | n-type Si:As | [100] | 4″ | 525 | P/P | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst |

PAM2966 | n-type Si:As | [100] | 4″ | 525 | P/E | 0.001-0.005 | SEMI Test (Chipped edge), 2Flats, Empak cst |

PAM2967 | n-type Si:As | [100] | 4″ | 525 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |

PAM2968 | n-type Si:As | [100] | 4″ | 550 ±10 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |

PAM2969 | p-type Si:B | [100] | 4″ | 380 | OxP/EOx | 5–10 | SEMI Prime, 1Flat, Thermal Oxide 2.2±0.2μm thick |

PAM2970 | n-type Si:P | [100] | 4″ | 500 | P/P | FZ >5,000 | Prime, NO Flats, Empak cst |

PAM2971 | n-type Si:P | [100] | 4″ | 800 | P/P | FZ 2,000-3,000 | SEMI Prime, 1Flat, TTV<5μm, Empak cst |

PAM2972 | n-type Si:P | [100] | 4″ | 800 | P/P | FZ 2,000-3,000 | SEMI Prime, 1Flat at [100], TTV<5μm, Empak cst |

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,

to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.