(100) Oriented Silicon Wafers-5

PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.

Item Material Orient. Diam
(mm)
Thck
(μm)
Surf. Resistivity
Ωcm
Comment
PAM2973 n-type Si:P [100] 4″ 500 P/P FZ 198-200 SEMI Prime, 2Flats, Empak cst
PAM2974 n-type Si:P [100-6°] ±0.5° 4″ 325 P/P FZ 1-10 SEMI Prime, 2Flats, Empak cst
PAM2975 Intrinsic Si:- [100] 4″ 300 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2976 Intrinsic Si:- [100] 4″ 525 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<1μm
PAM2977 Intrinsic Si:- [100] 4″ 525 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2978 Intrinsic Si:- [100] 4″ 650 P/P FZ >10,000 SEMI Prime, with LM, 1Flat, Empak cst, TTV<2μm
PAM2979 p-type Si:B [100] 4″ 300 P/E 800-5,400 SEMI Prime, 1Flat, Empak cst
PAM2980 p-type Si:B [100] 4″ 500 P/P 10–20 SEMI Prime, 2Flats, Empak cst
PAM2981 p-type Si:B [100] 4″ 1500 P/P >10 SEMI Prime, 2Flats, TTV<2μm, Empak cst,
PAM2982 p-type Si:B [100] 4″ 3000 P/E/P 10–15 SEMI Prime, 1Flat, Individual cst
PAM2983 p-type Si:B [100-6°] 4″ 250 P/E 8–12 SEMI Prime, 2Flats, Empak cst
PAM2984 p-type Si:B [100] 4″ 1000 P/E 6–7 SEMI Prime, 2Flats, Empak cst
PAM2985 p-type Si:B [100] 4″ 1600 P/P ~6 SEMI Prime, 1Flat, Individual cst
PAM2986 p-type Si:B [100-6°] 4″ 525 P/E 3–6 SEMI Prime, 2Flats, Empak cst
PAM2987 p-type Si:B [100] 4″ 500 P/P 2–10 SEMI Prime, 2Flats, Empak cst
PAM2988 p-type Si:B [100] 4″ 200 P/P 1–20 SEMI Prime, 1Flat, Empak cst
PAM2989 p-type Si:B [100] 4″ 200 P/P 1–5 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2990 p-type Si:B [100] 4″ 250 P/E 1–10 ohm-cm SEMI Prime, 2Flats, Empak cst
PAM2991 p-type Si:B [100] 4″ 300 P/E/P 1–10 ohm-cm SEMI Prime, 2Flats, Empak cst
PAM2992 p-type Si:B [100-10°] 4″ 300 P/E 1–10 ohm-cm SEMI Prime, 2Flats, Empak cst
PAM2993 p-type Si:B [100] 4″ 500 P/P 1–10 ohm-cm SEMI Prime, 2Flats, Empak cst
PAM2994 p-type Si:B [100] 4″ 500 P/P 2–10 SEMI Prime, 2Flats, Empak cst
PAM2995 p-type Si:B [100-6°] 4″ 525 P/E 1-100 SEMI Prime, 1Flat, Empak cst
PAM2996 p-type Si:B [100] ±1° 4″ 480 P/P 0.1-1.0 SEMI Prime, TTV<3μm, Empak cst
PAM2997 p-type Si:B [100-4°] ±0.5° 4″ 381 P/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst
PAM2998 p-type Si:B [100] 4″ 800 P/EP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
PAM2999 p-type Si:B [100] 4″ 3100 P/P CZ 0.006-0.009 SEMI Prime, 2Flats, Individual cst
PAM3000 p-type Si:B [100-6°] 4″ 525 P/E 0.0042-0.0047 SEMI Prime, 2Flats, Empak cst
PAM3001 p-type Si:B [100] 4″ 150 ±15 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<2μm
PAM3002 n-type Si:P [100] 4″ 200 P/P 49-57 SEMI Prime, 2Flats, Empak cst
PAM3003 n-type Si:P [100] 4″ 400 P/E 32-70 SEMI Prime, 2Flats, Empak cst
PAM3004 n-type Si:P [100] 4″ 400 P/P 17-19 Prime, NO Flats, Empak cst
PAM3005 n-type Si:P [100] 4″ 700 P/E 14-18 Prime, NO Flats, Empak cst
PAM3006 n-type Si:P [100] 4″ 250 P/E 11–13 SEMI Prime, 2Flats, Empak cst
PAM3007 n-type Si:P [100] 4″ 400 P/P 10–18 SEMI Prime, 2Flats, Empak cst
PAM3008 n-type Si:P [100] 4″ 525 P/E 5–10 SEMI Prime, 1Flat, Empak cst
PAM3009 n-type Si:P [100] 4″ 259 P/P 3–5 SEMI Prime, 2Flats, Empak cst
PAM3010 n-type Si:P [100] 4″ 475 P/P 1-100 SEMI Prime, 2Flats, Empak cst, TTV<2μm
PAM3011 n-type Si:P [100] 4″ 500 P/P 1-100 SEMI Prime, 2Flats, Empak cst, TTV<1μm, With Lasermark
PAM3012 n-type Si:P [100] 4″ 525 ±10 P/P 1-100 SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM3013 n-type Si:P [100-4°] 4″ 525 P/E/P 1–10 ohm-cm SEMI Prime, 2Flats, Empak cst
PAM3014 n-type Si:P [100-2°] 4″ 525 P/E >1 SEMI Prime, 2Flats, Empak cst
PAM3015 n-type Si:P [100] 4″ 600 P/P 1-100 SEMI Prime, 2Flats, TTV<2μm, Bow<20μm, Warp<30μm, Empak cst
PAM3016 n-type Si:P [100] 4″ 1000 P/P 1–20 SEMI Prime, 2Flats, Empak cst
PAM3017 n-type Si:P [100] 4″ 2500 P/P 1-100 SEMI Prime, 2Flats, Individual cst
PAM3018 n-type Si:Sb [100] 4″ 450 P/E ~0.03 SEMI Prime, 1Flat, Empak cst
PAM3019 n-type Si:Sb [100] 4″ 400 P/E ~0.02 SEMI Prime, 2Flats, Empak cst
PAM3020 n-type Si:Sb [100] ±0.2° 4″ 250 P/P 0.01-0.05 SEMI Prime, 2Flats, Empak cst
PAM3021 n-type Si:Sb [100] 4″ 310 ±15 P/P 0.010-0.025 SEMI Prime, 2Flats, Empak cst, TTV<1μm
PAM3022 n-type Si:Sb [100] 4″ 600 P/E 0.01-0.03 Strange Flats
PAM3023 n-type Si:Sb [100-4°] 4″ 1500 P/E/P 0.005-0.030 SEMI Prime, 2Flats, Empak cst
PAM3024 n-type Si:Sb [100] 4″ 1500 P/E/P 0.001-0.030 SEMI Prime, 2Flats, Empak cst
PAM3025 Intrinsic Si:- [100] 4″ 525 P/E 400-1,000 SEMI Prime, 1Flat, Empak cst

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

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