PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item | Dia | Type | Dopant | Orie | Res (Ohm-cm) | Thick (um) | Polish | Grade | Description |
PAM2312 | 100mm | P | B | <100> | 0-100 | 500um | SSP | Test | The ever-versatile 4″ Test-Grade. One of our most popular items! |
PAM2313 | 100mm | P | B | <100> | 0-100 | 500um | DSP | Test | Double-Side Polished Silicon Wafers at affordable prices! |
PAM2314 | 100mm | N | P | <100> | 0-100 | 500um | DSP | Test | Double Side Polished silicon wafers, test grade. |
PAM2315 | 100mm | N | P | <100> | 0-100 | 500um | SSP | Test | Silicon wafers, N-type, Test Grade. |
PAM2316 | 100mm | P | B | <100> | 43475 | 500um | DSP | Prime | |
PAM2317 | 100mm | P | B | <100> | 43475 | 500um | SSP | Prime | |
PAM2318 | 100mm | P | B | <100> | 0.001 – 0.005 | 525um | SSP | Prime | Degenerate doped Si wafers. |
PAM2319 | 100mm | N | P | <100> | 43475 | 500um | SSP | Prime | |
PAM2320 | 100mm | N | P | <100> | 43475 | 525um | DSP | Prime | |
PAM2321 | 100mm | N | As | <100> | .001-.005 | 500 um | SSP | Prime | Degenerately doped silicon. Double side polished wafers also available. |
PAM2322 | 100mm | P | B | <100> | 43595 | 380um | SSP | ||
PAM2323 | 100mm | P | B | <100> | 43758 | 500um | DSP | Prime | |
PAM2324 | 100mm | P | B | <100> | 43758 | 500um | SSP | Prime | |
PAM2325 | 100mm | ANY | ANY | ANY | >500um | SSP | MECH | MECHANICAL GRADE, POOR QUALITY. | |
PAM2326 | 100mm | N | P | <100> | 10-9999 | 240-260um | E/E | ||
PAM2327 | 100mm | P | B | <100> | 10-9999 | 240-260um | E/E | ||
PAM2328 | 100mm | P | B | <100> | 43485 | 1000um | SSP | Prime | |
PAM2329 | 100mm | P | B | <100> | 0.01-0.02 | 525um | SSP | Prime | Primary flat SEMI (011)+/-1 deg., 30-35mm Secondary flat SEMI 90 +/-5 deg., 16-20mm |
PAM2330 | 100mm | P | B | <100> | 43485 | 200um | DSP | ||
PAM2331 | 100mm | P | B | <100> | 43595 | 525um | SSP | Test | TTV<15um |
Item | Material | Orient. | Diam (mm) | Thck (μm) | Surf. | Resistivity Ωcm | Comment |
PAM2332 | N/Ph | [100] | 100mm | 470um | DSP | FZ >1,000 | Buy as few as one online |
PAM2333 | P/Boron | [100] | 100mm | 200um | DSP | FZ >1000 | |
PAM2334 | Undoped | [100] | 100mm | 500um | SSP | FZ >10,000 | Prime Grade Lifetime >1,200us, Surface Roughness <5A |
PAM2335 | Undoped | [100] | 100mm | 500um | DSP | FZ >5000 | |
PAM2336 | Intrinsic Si:- | [100] | 100mm | 500um | DSP | FZ >20,000 | Prime Grade |
PAM2337 | N/Sb | [100] | 100mm | 625 | SSP | 0.01-0.02 | 2 SEMI Flats |
PAM2338 | p–type Si:B | [110] ±0.5° | 4″ | 500 | P/E | FZ >10,000 | Prime, 2Flats, Empak cst, TTV<5μm |
PAM2339 | p–type Si:B | [110] ±0.5° | 4″ | 200 | P/P | FZ 1–2 | SEMI Prime, 2Flats, Empak cst |
PAM2340 | p–type Si:B | [110] ±0.5° | 4″ | 200 | P/P | FZ 1–2 | Prime, 2Flats, Empak cst |
PAM2341 | p–type Si:B | [110] ±0.5° | 4″ | 200 | P/P | FZ 1–2 | SEMI Prime, 2Flats, Empak cst, Extra 8 scratched wafers in cassette free of charge |
PAM2342 | p–type Si:B | [100] | 4″ | 220 ±10 | P/E | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
PAM2343 | p–type Si:B | [100] | 4″ | 230 ±10 | P/E | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
PAM2344 | p–type Si:B | [100–4° towards[110]] ±0.5° | 4″ | 525 | P/E | FZ >2,000 | SEMI Prime, Empak cst, TTV<5μm |
PAM2345 | p–type Si:B | [100] | 4″ | 420 | C/C | FZ 850–900 | SEMI Prime, 2Flats, Empak cst |
PAM2346 | p–type Si:B | [100] | 4″ | 250 | P/P | FZ 1–3 {0.97–1.01} | SEMI Prime, 2Flats, Empak cst, MCC Lifetime>1,000μs. |
PAM2347 | p–type Si:B | [100–6.0° towards[111]] ±0.5° | 4″ | 350 | P/P | FZ 1–10 | SEMI Prime, 2Flats, Empak cst |
PAM2348 | p–type Si:B | [100] | 4″ | 500 | P/P | FZ 1–5 | SEMI Prime, 2Flats, Empak cst |
PAM2349 | p–type Si:B | [111] ±0.5° | 4″ | 400 ±15 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Lifetime>1,000μs |
PAM2350 | p–type Si:B | [111] ±0.5° | 4″ | 397 | P/E | FZ 10,000–15,000 | SEMI Prime, Backside ACID Etched, Empak cst |
PAM2351 | n–type Si:P | [110] ±0.5° | 4″ | 500 | P/P | FZ >9,600 | SEMI Prime, 2Flats — Primary @ <111>±0.5° — edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, Empak cst, Lifetime>6,000μs |
PAM2352 | n–type Si:P | [110] ±0.5° | 4″ | 500 | P/P | FZ 5,000–15,000 | SEMI Prime, 2Flats — Primary @ <111>±0.5° — edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, in Empak cassette Lifetime>6,000μs |
PAM2353 | n–type Si:P | [110] ±0.5° | 4″ | 500 | P/P | FZ 5,000–15,000 | SEMI Prime, 2Flats — Primary @ <111>±0.5°, Secondary @ <111>. 70.5° CCW from Primary, in Empak cst, 3 wafers with minor edge chips, Lifetime >6,000μs |
PAM2354 | n–type Si:P | [100] | 4″ | 400 ±10 | P/P | FZ 6,000–8,000 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2355 | n–type Si:P | [100] | 4″ | 200 ±10 | P/P | FZ >5,000 | SEMI TEST (Scratches & defects on back–side), 1Flat, Ox<1E16/cc, C<1E16/cc, Lifetime>1,050μs, Empak cst |
PAM2356 | n–type Si:P | [100] | 4″ | 380 | P/E | FZ 5,000–10,000 | SEMI Prime, 1Flat, Lifetime>1,000μs, in Empak cassettes of 2 wafers |
PAM2357 | n–type Si:P | [100] | 4″ | 425 | C/C | FZ >5,000 | 2Flats (p–type flats on n–type wafers), Empak cst |
PAM2358 | n–type Si:P | [100–1.5° towards[110]] ±0.5° | 4″ | 525 | P/E | FZ >5,000 | SEMI Prime, 2Flats, Lifetime>980μs, in Empak |
PAM2359 | n–type Si:P | [100] | 4″ | 500 | G/G | FZ 4,300–6,300 | SEMI, 2Flats, Lifetime>1,000μs, Both sides Ground, Empak cst |
PAM2360 | n–type Si:P | [100] | 4″ | 525 | P/E | FZ 4,200–8,000 | SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, 1Flat, in Empak cassettes of 6, 7 & 7 wafers |
PAM2361 | n–type Si:P | [100] ±0.2° | 4″ | 380 ±10 | P/E | FZ >3,500 | SEMI TEST (in opened Empak cst), 1 Flat |
PAM2362 | n–type Si:P | [100] | 4″ | 400 ±10 | P/P | FZ 3,100–6,800 | SEMI Prime, 2Flats, TTV<5μm |
PAM2363 | n–type Si:P | [100] | 4″ | 200 | P/P | FZ >3,000 | SEMI Prime, 1Flat, Empak cst, MCC Lifetime > 1,000μs, |
PAM2364 | n–type Si:P | [100] | 4″ | 400 | P/E | FZ 2,000–6,500 | SEMI Prime, 2Flats, Empak cst, Lifetime>1,000μs |
PAM2365 | n–type Si:P | [100] | 4″ | 400 | P/E | FZ 2,000–6,500 | SEMI, 2Flats, Empak cst |
PAM2366 | n–type Si:P | [100] | 4″ | 915 ±10 | E/E | FZ 2,000–3,000 | 1Flat at [100], Empak cst |
PAM2367 | n–type Si:P | [100] | 4″ | 300 | L/L | FZ 1,100–1,600 | SEMI, 1Flat, Empak cst |
PAM2368 | n–type Si:P | [100] ±1° | 4″ | 200 ±10 | P/P | FZ >1,000 | SEMI Prime, 1Flat, TTV<1μm, in Empak cst |
PAM2369 | n–type Si:P | [100] | 4″ | 200 ±10 | BROKEN | FZ 800–1,500 | Broken P/E wafers, in various size pieces, Lifetime >1,000μs |
PAM2370 | n–type Si:P | [100] | 4″ | 300 | L/L | FZ 800–1,500 | SEMI, 1Flat, Empak cst |
PAM2371 | n–type Si:P | [100] | 4″ | 300 | L/L | FZ 800–1,500 | SEMI, 1Flat, Empak cst |
PAM2372 | n–type Si:P | [100] | 4″ | 500 | P/P | FZ 400–1,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
PAM2373 | n–type Si:P | [100] | 4″ | 500 | P/P | FZ 198–200 | SEMI Prime, 1Flat, Empak cst |
PAM2374 | n–type Si:P | [100] | 4″ | 500 | P/P | FZ 50–70 | SEMI Prime, 1Flat, Empak cst |
PAM2375 | n–type Si:P | [100] | 4″ | 570 ±10 | E/E | FZ 50–70 | SEMI Prime, 1Flat, Empak cst, lifetime>1,200μs. |
PAM2376 | n–type Si:P | [100] | 4″ | 300 | P/P | FZ 1.2–2.0 | SEMI Prime, 2Flats, MCC Lifetime (370–420)μs, Empak cst |
PAM2377 | n–type Si:P | [100] | 4″ | 300 | P/P | FZ 1.2–2.0 | SEMI Prime, 2Flats, MCC Lifetime (370–420)μs, Empak cst |
PAM2378 | n–type Si:P | [100–6°] ±0.5° | 4″ | 350 | P/P | FZ 1–10 | SEMI Prime, 2Flats, Empak cst |
PAM2379 | n–type Si:P | [100] | 4″ | 525 | P/P | FZ 1–5 | SEMI Prime, 2Flats, Empak cst |
PAM2380 | n–type Si:P | [100–4° towards[111]] ±0.5° | 4″ | 525 | P/E | FZ 1–10 {3.2–4.0} | SEMI Prime, 2Flats, Lifetime: ~500μs, in Empak cassettes of 5 wafers |
PAM2381 | n–type Si:P | [111] ±0.5° | 4″ | 500 | P/E | FZ 10,000–15,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
PAM2382 | n–type Si:P | [111] ±0.25° | 4″ | 675 | P/E | FZ 10,000–20,000 | SEMI TEST (Light scratches), 1Flat, Lifetime>1,000μs, Empak cst, |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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