100mm (4 Inch) Silicon Wafers-1

100mm (4 Inch) Silicon Wafers-1

PAM XIAMEN offers 100mm Si wafers. Please send us email at [email protected] if you need other specs and quantity.

Item Dia Type Dopant Orie Res (Ohm-cm) Thick (um) Polish Grade Description
PAM2312 100mm P B <100> 0-100 500um SSP Test The ever-versatile 4″ Test-Grade. One of our most popular items!
PAM2313 100mm P B <100> 0-100 500um DSP Test Double-Side Polished Silicon Wafers at affordable prices!
PAM2314 100mm N P <100> 0-100 500um DSP Test Double Side Polished silicon wafers, test grade.
PAM2315 100mm N P <100> 0-100 500um SSP Test Silicon wafers, N-type, Test Grade.
PAM2316 100mm P B <100> 43475 500um DSP Prime
PAM2317 100mm P B <100> 43475 500um SSP Prime
PAM2318 100mm P B <100> 0.001 – 0.005 525um SSP Prime Degenerate doped Si wafers.
PAM2319 100mm N P <100> 43475 500um SSP Prime
PAM2320 100mm N P <100> 43475 525um DSP Prime
PAM2321 100mm N As <100> .001-.005 500 um SSP Prime Degenerately doped silicon. Double side polished wafers also available.
PAM2322 100mm P B <100> 43595 380um SSP
PAM2323 100mm P B <100> 43758 500um DSP Prime
PAM2324 100mm P B <100> 43758 500um SSP Prime
PAM2325 100mm ANY ANY ANY >500um SSP MECH MECHANICAL GRADE, POOR QUALITY.
PAM2326 100mm N P <100> 10-9999 240-260um E/E
PAM2327 100mm P B <100> 10-9999 240-260um E/E
PAM2328 100mm P B <100> 43485 1000um SSP Prime
PAM2329 100mm P B <100> 0.01-0.02 525um SSP Prime Primary flat SEMI (011)+/-1 deg., 30-35mm Secondary flat SEMI 90 +/-5 deg., 16-20mm
PAM2330 100mm P B <100> 43485 200um DSP
PAM2331 100mm P B <100> 43595 525um SSP Test TTV<15um

 

Item Material Orient. Diam
(mm)
Thck
(μm)
Surf. Resistivity
Ωcm
Comment
PAM2332 N/Ph [100] 100mm 470um DSP FZ >1,000 Buy as few as one online
PAM2333 P/Boron [100] 100mm 200um DSP FZ >1000
PAM2334 Undoped [100] 100mm 500um SSP FZ >10,000 Prime Grade Lifetime >1,200us, Surface Roughness <5A
PAM2335 Undoped [100] 100mm 500um DSP FZ >5000
PAM2336 Intrinsic Si:- [100] 100mm 500um DSP FZ >20,000 Prime Grade
PAM2337 N/Sb [100] 100mm 625 SSP 0.01-0.02 2 SEMI Flats
PAM2338 p–type Si:B [110] ±0.5° 4″ 500 P/E FZ >10,000 Prime, 2Flats, Empak cst, TTV<5μm
PAM2339 p–type Si:B [110] ±0.5° 4″ 200 P/P FZ 1–2 SEMI Prime, 2Flats, Empak cst
PAM2340 p–type Si:B [110] ±0.5° 4″ 200 P/P FZ 1–2 Prime, 2Flats, Empak cst
PAM2341 p–type Si:B [110] ±0.5° 4″ 200 P/P FZ 1–2 SEMI Prime, 2Flats, Empak cst, Extra 8 scratched wafers in cassette free of charge
PAM2342 p–type Si:B [100] 4″ 220 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
PAM2343 p–type Si:B [100] 4″ 230 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
PAM2344 p–type Si:B [100–4° towards[110]] ±0.5° 4″ 525 P/E FZ >2,000 SEMI Prime, Empak cst, TTV<5μm
PAM2345 p–type Si:B [100] 4″ 420 C/C FZ 850–900 SEMI Prime, 2Flats, Empak cst
PAM2346 p–type Si:B [100] 4″ 250 P/P FZ 1–3 {0.97–1.01} SEMI Prime, 2Flats, Empak cst, MCC Lifetime>1,000μs.
PAM2347 p–type Si:B [100–6.0° towards[111]] ±0.5° 4″ 350 P/P FZ 1–10 SEMI Prime, 2Flats, Empak cst
PAM2348 p–type Si:B [100] 4″ 500 P/P FZ 1–5 SEMI Prime, 2Flats, Empak cst
PAM2349 p–type Si:B [111] ±0.5° 4″ 400 ±15 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Lifetime>1,000μs
PAM2350 p–type Si:B [111] ±0.5° 4″ 397 P/E FZ 10,000–15,000 SEMI Prime, Backside ACID Etched, Empak cst
PAM2351 n–type Si:P [110] ±0.5° 4″ 500 P/P FZ >9,600 SEMI Prime, 2Flats — Primary @ <111>±0.5° — edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, Empak cst, Lifetime>6,000μs
PAM2352 n–type Si:P [110] ±0.5° 4″ 500 P/P FZ 5,000–15,000 SEMI Prime, 2Flats — Primary @ <111>±0.5° — edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, in Empak cassette Lifetime>6,000μs
PAM2353 n–type Si:P [110] ±0.5° 4″ 500 P/P FZ 5,000–15,000 SEMI Prime, 2Flats — Primary @ <111>±0.5°, Secondary @ <111>. 70.5° CCW from Primary, in Empak cst, 3 wafers with minor edge chips, Lifetime >6,000μs
PAM2354 n–type Si:P [100] 4″ 400 ±10 P/P FZ 6,000–8,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2355 n–type Si:P [100] 4″ 200 ±10 P/P FZ >5,000 SEMI TEST (Scratches & defects on back–side), 1Flat, Ox<1E16/cc, C<1E16/cc, Lifetime>1,050μs, Empak cst
PAM2356 n–type Si:P [100] 4″ 380 P/E FZ 5,000–10,000 SEMI Prime, 1Flat, Lifetime>1,000μs, in Empak cassettes of 2 wafers
PAM2357 n–type Si:P [100] 4″ 425 C/C FZ >5,000 2Flats (p–type flats on n–type wafers), Empak cst
PAM2358 n–type Si:P [100–1.5° towards[110]] ±0.5° 4″ 525 P/E FZ >5,000 SEMI Prime, 2Flats, Lifetime>980μs, in Empak
PAM2359 n–type Si:P [100] 4″ 500 G/G FZ 4,300–6,300 SEMI, 2Flats, Lifetime>1,000μs, Both sides Ground, Empak cst
PAM2360 n–type Si:P [100] 4″ 525 P/E FZ 4,200–8,000 SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
PAM2361 n–type Si:P [100] ±0.2° 4″ 380 ±10 P/E FZ >3,500 SEMI TEST (in opened Empak cst), 1 Flat
PAM2362 n–type Si:P [100] 4″ 400 ±10 P/P FZ 3,100–6,800 SEMI Prime, 2Flats, TTV<5μm
PAM2363 n–type Si:P [100] 4″ 200 P/P FZ >3,000 SEMI Prime, 1Flat, Empak cst, MCC Lifetime > 1,000μs,
PAM2364 n–type Si:P [100] 4″ 400 P/E FZ 2,000–6,500 SEMI Prime, 2Flats, Empak cst, Lifetime>1,000μs
PAM2365 n–type Si:P [100] 4″ 400 P/E FZ 2,000–6,500 SEMI, 2Flats, Empak cst
PAM2366 n–type Si:P [100] 4″ 915 ±10 E/E FZ 2,000–3,000 1Flat at [100], Empak cst
PAM2367 n–type Si:P [100] 4″ 300 L/L FZ 1,100–1,600 SEMI, 1Flat, Empak cst
PAM2368 n–type Si:P [100] ±1° 4″ 200 ±10 P/P FZ >1,000 SEMI Prime, 1Flat, TTV<1μm, in Empak cst
PAM2369 n–type Si:P [100] 4″ 200 ±10 BROKEN FZ 800–1,500 Broken P/E wafers, in various size pieces, Lifetime >1,000μs
PAM2370 n–type Si:P [100] 4″ 300 L/L FZ 800–1,500 SEMI, 1Flat, Empak cst
PAM2371 n–type Si:P [100] 4″ 300 L/L FZ 800–1,500 SEMI, 1Flat, Empak cst
PAM2372 n–type Si:P [100] 4″ 500 P/P FZ 400–1,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2373 n–type Si:P [100] 4″ 500 P/P FZ 198–200 SEMI Prime, 1Flat, Empak cst
PAM2374 n–type Si:P [100] 4″ 500 P/P FZ 50–70 SEMI Prime, 1Flat, Empak cst
PAM2375 n–type Si:P [100] 4″ 570 ±10 E/E FZ 50–70 SEMI Prime, 1Flat, Empak cst, lifetime>1,200μs.
PAM2376 n–type Si:P [100] 4″ 300 P/P FZ 1.2–2.0 SEMI Prime, 2Flats, MCC Lifetime (370–420)μs, Empak cst
PAM2377 n–type Si:P [100] 4″ 300 P/P FZ 1.2–2.0 SEMI Prime, 2Flats, MCC Lifetime (370–420)μs, Empak cst
PAM2378 n–type Si:P [100–6°] ±0.5° 4″ 350 P/P FZ 1–10 SEMI Prime, 2Flats, Empak cst
PAM2379 n–type Si:P [100] 4″ 525 P/P FZ 1–5 SEMI Prime, 2Flats, Empak cst
PAM2380 n–type Si:P [100–4° towards[111]] ±0.5° 4″ 525 P/E FZ 1–10 {3.2–4.0} SEMI Prime, 2Flats, Lifetime: ~500μs, in Empak cassettes of 5 wafers
PAM2381 n–type Si:P [111] ±0.5° 4″ 500 P/E FZ 10,000–15,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2382 n–type Si:P [111] ±0.25° 4″ 675 P/E FZ 10,000–20,000 SEMI TEST (Light scratches), 1Flat, Lifetime>1,000μs, Empak cst,

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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