PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.

Item | Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |

PAM2485 | p–type Si:B | [100] | 4″ | 3000 | P/E | 1–100 | SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers |

PAM2486 | p–type Si:B | [100] | 4″ | 3000 | P/E | 1–30 | SEMI, 2Flats, Individual cst |

PAM2487 | p–type Si:B | [100] | 4″ | 3175 | P/P | 1–10 | SEMI Prime, 2Flats, Individual cst, TTV<8μm |

PAM2488 | p–type Si:B | [100] | 4″ | 3175 | P/P | 1–10 | SEMI Prime, 2Flats, Individual cst, TTV<8μm |

PAM2489 | p–type Si:B | [100] | 4″ | 3200 | P/E | 1–100 | SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers |

PAM2490 | p–type Si:B | [100] | 4″ | 4000 | P/P | 1–100 | SEMI Prime, 2Flats, Individual cst |

PAM2491 | p–type Si:B | [100] | 4″ | 890 ±15 | P/P | 0.5–10.0 | SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst |

PAM2492 | p–type Si:B | [100] | 4″ | 525 | P/E | 0.1–0.2 | SEMI Prime, 2Flats, Empak cst |

PAM2493 | p–type Si:B | [100] | 4″ | 350 | P/E | 0.095–0.130 | SEMI Prime, 2Flats, Empak cst |

PAM2494 | p–type Si:B | [100–6° towards[110]] ±0.5° | 4″ | 525 | P/E | 0.015–0.020 | SEMI Prime, 2Flats, in Empak cassettes of 5 & 10 wafers |

PAM2495 | p–type Si:B | [100] | 4″ | 300 | E/E | 0.01–0.02 | SEMI Prime, 2Flats, Empak cst, TTV<4μm |

PAM2496 | p–type Si:B | [100] | 4″ | 300 | E/E | 0.01–0.02 | SEMI Prime, 2Flats, Empak cst, TTV<4μm |

PAM2497 | p–type Si:B | [100–4°] ±0.5° | 4″ | 380 ±10 | P/P | 0.01–0.02 | SEMI Prime, Empak cst, TTV<2μm |

PAM2498 | p–type Si:B | [100] | 4″ | 525 | P/E | 0.01–0.02 | SEMI, 2Flats, Empak cst, TTV<5μm |

PAM2499 | p–type Si:B | [100] | 4″ | 525 | P/POx | 0.008–0.020 | SEMI Prime, 2Flats, Empak cst |

PAM2500 | p–type Si:B | [100] | 4″ | 500 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst, Wafers with striation marks |

PAM2501 | p–type Si:B | [100] | 4″ | 500 | P/P | 0.001–0.005 | SEMI Test, 2Flats, Empak cst, Wafers with striation marks, Unsealed and previously opened |

PAM2502 | p–type Si:B | [100] | 4″ | 525 | P/P | 0.001–0.005 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Bow<15μm, Warp<30μm |

PAM2503 | p–type Si:B | [100] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst |

PAM2504 | p–type Si:B | [100] | 4″ | 525 | BROKEN | 0.001–0.005 | Broken wafer (shattered into many pieces), 1Flat |

PAM2505 | p–type Si:B | [100] | 4″ | 800 | C/C | 0.001–0.005 | SEMI, 2Flats, Empak cst, With striation marks |

PAM2506 | p–type Si:B | [100] | 4″ | 2000 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, Individual cst Sealed in group of 5 wafers |

PAM2507 | p–type Si:B | [100] | 4″ | ? | P/P | ? | SEMI Test, 2Flats, Empak cst |

PAM2508 | p–type Si:B | [100] | 4″ | 375 | P/E | <0.0015 {0.00091–0.00099} | SEMI Prime, 1Flat, Empak cst, TTV<3μm |

PAM2509 | p–type Si:B | [111] | 4″ | 350 | P/E | 2–3 | Prime, NO Flats, Empak cst |

PAM2510 | p–type Si:B | [111] | 4″ | 1000 | P/P | 1–10 | SEMI Prime, 1Flat, Empak cst, Cassettes of 10 and 10 wafers |

PAM2511 | p–type Si:B | [111] | 4″ | 1000 | P/P | 1–10 | SEMI Prime, 1Flat, Empak cst |

PAM2512 | p–type Si:B | [111] ±0.5° | 4″ | 1000 | P/E | 1–10 | SEMI Prime, 1Flat, in hard cassettes of 7 & 8 wafers |

PAM2513 | p–type Si:B | [111] ±0.5° | 4″ | 525 | P/P | 0.2–1.0 | SEMI Prime, 1Flat, Empak cst |

PAM2514 | p–type Si:B | [111] ±0.5° | 4″ | 525 | P/P | 0.2–1.0 | SEMI Prime, 1Flat, in Empak cassettes of 6, 7 & 7 wafers |

PAM2515 | p–type Si:B | [111–4°] ±0.5° | 4″ | 525 | P/E | 0.01–0.02 | SEMI Prime, 1Flat, Empak cst |

PAM2516 | p–type Si:B | [111–4°] ±0.5° | 4″ | 525 ±15 | P/EOx | 0.005–0.015 {0.0086–0.0135} | SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back–side |

PAM2517 | p–type Si:B | [111–3°] ±0.5° | 4″ | 525 | P/E | 0.002–0.016 | SEMI Prime, 1Flat, in Empak cassettes of 4, 5 & 5 wafers |

PAM2518 | p–type Si:B | [111–3°] | 4″ | 525 | P/E | 0.002–0.004 | SEMI Prime, 1Flat, Empak cst |

PAM2519 | p–type Si:B | [111] ±0.5° | 4″ | 1000 | P/E | <0.01 | SEMI Prime, 1Flat, Empak cst |

PAM2520 | p–type Si:B | [112] ±0.5° | 4″ | 500 | P/P | 1–100 | SEMI Prime, 1Flat at <1,1,–1>, Empak cst |

PAM2521 | n–type Si:P | [110] ±0.5° | 4″ | 525 | P/P | 20–80 | SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst |

PAM2522 | n–type Si:P | [110] ±0.5° | 4″ | 500 | P/P | 3–10 | SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers |

PAM2523 | n–type Si:P | [110] ±0.3° | 4″ | 525 | P/P | 3–10 | SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary |

PAM2524 | n–type Si:P | [110] ±0.3° | 4″ | 525 | P/P | 3–10 | Prime, 2Flats, Empak cst |

PAM2525 | n–type Si:P | [110] ±0.3° | 4″ | 525 | P/P | 3–10 | SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 6 & 7 wafers |

PAM2526 | n–type Si:P | [110] ±0.5° | 4″ | 525 | P/E | 3–9 | SEMI Prime, Primary Flat @ <111>±1°, S Flat @ <111> 70.5° CW from PF, TTV<10μm Bow/Warp<30μm, Empak cst |

PAM2527 | n–type Si:P | [110] ±0.5° | 4″ | 525 | P/E | 3–9 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |

PAM2528 | n–type Si:P | [110] ±0.2° | 4″ | 525 | P/E | 3–10 | SEMI Prime, Primary Flat @ <111>±0.2°, SF @ <111> 70.5° CW from PF, TTV<4μm Bow<15μm, Warp<30μm, Empak cst |

PAM2529 | n–type Si:Sb | [110] ±0.5° | 4″ | 525 | P/P | 0.01–0.02 {0.0176–0.0180} | Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst |

PAM2530 | n–type Si:As | [110] ±0.5° | 4″ | 275 | P/P | 0.001–0.005 | SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°, |

Secondary at 70.5°±5° CW from Primary, Empak cst | |||||||

PAM2531 | n–type Si:As | [110] ±0.5° | 4″ | 275 ±10 | P/P | 0.001–0.005 | SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst, TTV<5μm |

PAM2532 | n–type Si:As | [110] ±0.5° | 4″ | 275 ±10 | P/P | 0.001–0.005 | SEMI Prime, 2Flats at [111] 70.5° apart, TTV<5μm, Empak cst |

PAM2533 | n–type Si:As | [110] ±0.5° | 4″ | 400 | E/E | 0.001–0.005 | SEMI, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst |

PAM2534 | n–type Si:P | [100] | 4″ | 310 ±10 | P/P | 20–30 | SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee |

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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