100mm (4 Inch) Silicon Wafers-4

PAM XIAMEN offers 100mm Si wafers. Please send us email at [email protected] if you need other specs and quantity.

ItemMaterialOrient.Diam
(mm)
Thck
(μm)
Surf.Resistivity
Ωcm
Comment
PAM2485p–type Si:B[100]4″3000P/E1–100SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers
PAM2486p–type Si:B[100]4″3000P/E1–30SEMI, 2Flats, Individual cst
PAM2487p–type Si:B[100]4″3175P/P1–10SEMI Prime, 2Flats, Individual cst, TTV<8μm
PAM2488p–type Si:B[100]4″3175P/P1–10SEMI Prime, 2Flats, Individual cst, TTV<8μm
PAM2489p–type Si:B[100]4″3200P/E1–100SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers
PAM2490p–type Si:B[100]4″4000P/P1–100SEMI Prime, 2Flats, Individual cst
PAM2491p–type Si:B[100]4″890 ±15P/P0.5–10.0SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst
PAM2492p–type Si:B[100]4″525P/E0.1–0.2SEMI Prime, 2Flats, Empak cst
PAM2493p–type Si:B[100]4″350P/E0.095–0.130SEMI Prime, 2Flats, Empak cst
PAM2494p–type Si:B[100–6° towards[110]] ±0.5°4″525P/E0.015–0.020SEMI Prime, 2Flats, in Empak cassettes of 5 & 10 wafers
PAM2495p–type Si:B[100]4″300E/E0.01–0.02SEMI Prime, 2Flats, Empak cst, TTV<4μm
PAM2496p–type Si:B[100]4″300E/E0.01–0.02SEMI Prime, 2Flats, Empak cst, TTV<4μm
PAM2497p–type Si:B[100–4°] ±0.5°4″380 ±10P/P0.01–0.02SEMI Prime, Empak cst, TTV<2μm
PAM2498p–type Si:B[100]4″525P/E0.01–0.02SEMI, 2Flats, Empak cst, TTV<5μm
PAM2499p–type Si:B[100]4″525P/POx0.008–0.020SEMI Prime, 2Flats, Empak cst
PAM2500p–type Si:B[100]4″500P/P0.001–0.005SEMI Prime, 2Flats, Empak cst, Wafers with striation marks
PAM2501p–type Si:B[100]4″500P/P0.001–0.005SEMI Test, 2Flats, Empak cst, Wafers with striation marks, Unsealed and previously opened
PAM2502p–type Si:B[100]4″525P/P0.001–0.005SEMI Prime, 1Flat, Empak cst, TTV<5μm, Bow<15μm, Warp<30μm
PAM2503p–type Si:B[100]4″525P/E0.001–0.005SEMI Prime, 2Flats, Empak cst
PAM2504p–type Si:B[100]4″525BROKEN0.001–0.005Broken wafer (shattered into many pieces), 1Flat
PAM2505p–type Si:B[100]4″800C/C0.001–0.005SEMI, 2Flats, Empak cst, With striation marks
PAM2506p–type Si:B[100]4″2000P/P0.001–0.005SEMI Prime, 2Flats, Individual cst Sealed in group of 5 wafers
PAM2507p–type Si:B[100]4″?P/P?SEMI Test, 2Flats, Empak cst
PAM2508p–type Si:B[100]4″375P/E<0.0015 {0.00091–0.00099}SEMI Prime, 1Flat, Empak cst, TTV<3μm
PAM2509p–type Si:B[111]4″350P/E2–3Prime, NO Flats, Empak cst
PAM2510p–type Si:B[111]4″1000P/P1–10SEMI Prime, 1Flat, Empak cst, Cassettes of 10 and 10 wafers
PAM2511p–type Si:B[111]4″1000P/P1–10SEMI Prime, 1Flat, Empak cst
PAM2512p–type Si:B[111] ±0.5°4″1000P/E1–10SEMI Prime, 1Flat, in hard cassettes of 7 & 8 wafers
PAM2513p–type Si:B[111] ±0.5°4″525P/P0.2–1.0SEMI Prime, 1Flat, Empak cst
PAM2514p–type Si:B[111] ±0.5°4″525P/P0.2–1.0SEMI Prime, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
PAM2515p–type Si:B[111–4°] ±0.5°4″525P/E0.01–0.02SEMI Prime, 1Flat, Empak cst
PAM2516p–type Si:B[111–4°] ±0.5°4″525 ±15P/EOx0.005–0.015 {0.0086–0.0135}SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back–side
PAM2517p–type Si:B[111–3°] ±0.5°4″525P/E0.002–0.016SEMI Prime, 1Flat, in Empak cassettes of 4, 5 & 5 wafers
PAM2518p–type Si:B[111–3°]4″525P/E0.002–0.004SEMI Prime, 1Flat, Empak cst
PAM2519p–type Si:B[111] ±0.5°4″1000P/E<0.01SEMI Prime, 1Flat, Empak cst
PAM2520p–type Si:B[112] ±0.5°4″500P/P1–100SEMI Prime, 1Flat at <1,1,–1>, Empak cst
PAM2521n–type Si:P[110] ±0.5°4″525P/P20–80SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst
PAM2522n–type Si:P[110] ±0.5°4″500P/P3–10SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers
PAM2523n–type Si:P[110] ±0.3°4″525P/P3–10SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary
PAM2524n–type Si:P[110] ±0.3°4″525P/P3–10Prime, 2Flats, Empak cst
PAM2525n–type Si:P[110] ±0.3°4″525P/P3–10SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 6 & 7 wafers
PAM2526n–type Si:P[110] ±0.5°4″525P/E3–9SEMI Prime, Primary Flat @ <111>±1°, S Flat @ <111> 70.5° CW from PF, TTV<10μm Bow/Warp<30μm, Empak cst
PAM2527n–type Si:P[110] ±0.5°4″525P/E3–9SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2528n–type Si:P[110] ±0.2°4″525P/E3–10SEMI Prime, Primary Flat @ <111>±0.2°, SF @ <111> 70.5° CW from PF, TTV<4μm Bow<15μm, Warp<30μm, Empak cst
PAM2529n–type Si:Sb[110] ±0.5°4″525P/P0.01–0.02 {0.0176–0.0180}Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst
PAM2530n–type Si:As[110] ±0.5°4″275P/P0.001–0.005SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°,
Secondary at 70.5°±5° CW from Primary, Empak cst
PAM2531n–type Si:As[110] ±0.5°4″275 ±10P/P0.001–0.005SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst, TTV<5μm
PAM2532n–type Si:As[110] ±0.5°4″275 ±10P/P0.001–0.005SEMI Prime, 2Flats at [111] 70.5° apart, TTV<5μm, Empak cst
PAM2533n–type Si:As[110] ±0.5°4″400E/E0.001–0.005SEMI, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst
PAM2534n–type Si:P[100]4″310 ±10P/P20–30SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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