100mm (4 Inch) Silicon Wafers-4

PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.

Item Material Orient. Diam
(mm)
Thck
(μm)
Surf. Resistivity
Ωcm
Comment
PAM2485 p–type Si:B [100] 4″ 3000 P/E 1–100 SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers
PAM2486 p–type Si:B [100] 4″ 3000 P/E 1–30 SEMI, 2Flats, Individual cst
PAM2487 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, TTV<8μm
PAM2488 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, TTV<8μm
PAM2489 p–type Si:B [100] 4″ 3200 P/E 1–100 SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers
PAM2490 p–type Si:B [100] 4″ 4000 P/P 1–100 SEMI Prime, 2Flats, Individual cst
PAM2491 p–type Si:B [100] 4″ 890 ±15 P/P 0.5–10.0 SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst
PAM2492 p–type Si:B [100] 4″ 525 P/E 0.1–0.2 SEMI Prime, 2Flats, Empak cst
PAM2493 p–type Si:B [100] 4″ 350 P/E 0.095–0.130 SEMI Prime, 2Flats, Empak cst
PAM2494 p–type Si:B [100–6° towards[110]] ±0.5° 4″ 525 P/E 0.015–0.020 SEMI Prime, 2Flats, in Empak cassettes of 5 & 10 wafers
PAM2495 p–type Si:B [100] 4″ 300 E/E 0.01–0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
PAM2496 p–type Si:B [100] 4″ 300 E/E 0.01–0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
PAM2497 p–type Si:B [100–4°] ±0.5° 4″ 380 ±10 P/P 0.01–0.02 SEMI Prime, Empak cst, TTV<2μm
PAM2498 p–type Si:B [100] 4″ 525 P/E 0.01–0.02 SEMI, 2Flats, Empak cst, TTV<5μm
PAM2499 p–type Si:B [100] 4″ 525 P/POx 0.008–0.020 SEMI Prime, 2Flats, Empak cst
PAM2500 p–type Si:B [100] 4″ 500 P/P 0.001–0.005 SEMI Prime, 2Flats, Empak cst, Wafers with striation marks
PAM2501 p–type Si:B [100] 4″ 500 P/P 0.001–0.005 SEMI Test, 2Flats, Empak cst, Wafers with striation marks, Unsealed and previously opened
PAM2502 p–type Si:B [100] 4″ 525 P/P 0.001–0.005 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Bow<15μm, Warp<30μm
PAM2503 p–type Si:B [100] 4″ 525 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst
PAM2504 p–type Si:B [100] 4″ 525 BROKEN 0.001–0.005 Broken wafer (shattered into many pieces), 1Flat
PAM2505 p–type Si:B [100] 4″ 800 C/C 0.001–0.005 SEMI, 2Flats, Empak cst, With striation marks
PAM2506 p–type Si:B [100] 4″ 2000 P/P 0.001–0.005 SEMI Prime, 2Flats, Individual cst Sealed in group of 5 wafers
PAM2507 p–type Si:B [100] 4″ ? P/P ? SEMI Test, 2Flats, Empak cst
PAM2508 p–type Si:B [100] 4″ 375 P/E <0.0015 {0.00091–0.00099} SEMI Prime, 1Flat, Empak cst, TTV<3μm
PAM2509 p–type Si:B [111] 4″ 350 P/E 2–3 Prime, NO Flats, Empak cst
PAM2510 p–type Si:B [111] 4″ 1000 P/P 1–10 SEMI Prime, 1Flat, Empak cst, Cassettes of 10 and 10 wafers
PAM2511 p–type Si:B [111] 4″ 1000 P/P 1–10 SEMI Prime, 1Flat, Empak cst
PAM2512 p–type Si:B [111] ±0.5° 4″ 1000 P/E 1–10 SEMI Prime, 1Flat, in hard cassettes of 7 & 8 wafers
PAM2513 p–type Si:B [111] ±0.5° 4″ 525 P/P 0.2–1.0 SEMI Prime, 1Flat, Empak cst
PAM2514 p–type Si:B [111] ±0.5° 4″ 525 P/P 0.2–1.0 SEMI Prime, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
PAM2515 p–type Si:B [111–4°] ±0.5° 4″ 525 P/E 0.01–0.02 SEMI Prime, 1Flat, Empak cst
PAM2516 p–type Si:B [111–4°] ±0.5° 4″ 525 ±15 P/EOx 0.005–0.015 {0.0086–0.0135} SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back–side
PAM2517 p–type Si:B [111–3°] ±0.5° 4″ 525 P/E 0.002–0.016 SEMI Prime, 1Flat, in Empak cassettes of 4, 5 & 5 wafers
PAM2518 p–type Si:B [111–3°] 4″ 525 P/E 0.002–0.004 SEMI Prime, 1Flat, Empak cst
PAM2519 p–type Si:B [111] ±0.5° 4″ 1000 P/E <0.01 SEMI Prime, 1Flat, Empak cst
PAM2520 p–type Si:B [112] ±0.5° 4″ 500 P/P 1–100 SEMI Prime, 1Flat at <1,1,–1>, Empak cst
PAM2521 n–type Si:P [110] ±0.5° 4″ 525 P/P 20–80 SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst
PAM2522 n–type Si:P [110] ±0.5° 4″ 500 P/P 3–10 SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers
PAM2523 n–type Si:P [110] ±0.3° 4″ 525 P/P 3–10 SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary
PAM2524 n–type Si:P [110] ±0.3° 4″ 525 P/P 3–10 Prime, 2Flats, Empak cst
PAM2525 n–type Si:P [110] ±0.3° 4″ 525 P/P 3–10 SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 6 & 7 wafers
PAM2526 n–type Si:P [110] ±0.5° 4″ 525 P/E 3–9 SEMI Prime, Primary Flat @ <111>±1°, S Flat @ <111> 70.5° CW from PF, TTV<10μm Bow/Warp<30μm, Empak cst
PAM2527 n–type Si:P [110] ±0.5° 4″ 525 P/E 3–9 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2528 n–type Si:P [110] ±0.2° 4″ 525 P/E 3–10 SEMI Prime, Primary Flat @ <111>±0.2°, SF @ <111> 70.5° CW from PF, TTV<4μm Bow<15μm, Warp<30μm, Empak cst
PAM2529 n–type Si:Sb [110] ±0.5° 4″ 525 P/P 0.01–0.02 {0.0176–0.0180} Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst
PAM2530 n–type Si:As [110] ±0.5° 4″ 275 P/P 0.001–0.005 SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°,
Secondary at 70.5°±5° CW from Primary, Empak cst
PAM2531 n–type Si:As [110] ±0.5° 4″ 275 ±10 P/P 0.001–0.005 SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst, TTV<5μm
PAM2532 n–type Si:As [110] ±0.5° 4″ 275 ±10 P/P 0.001–0.005 SEMI Prime, 2Flats at [111] 70.5° apart, TTV<5μm, Empak cst
PAM2533 n–type Si:As [110] ±0.5° 4″ 400 E/E 0.001–0.005 SEMI, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst
PAM2534 n–type Si:P [100] 4″ 310 ±10 P/P 20–30 SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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