There are more than 200 silicon carbide crystal types in the world, among which the mainstream crystal type of current silicon carbide wafer production is 4H-SiC. Below specification of 100mm silicon carbide in PAM-XIAMEN are available:

1. Specifications of 100mm Silicon Carbide 4H N-type

Specificationsof Silicon Carbide N-type 100mm Diameter –
polytype	4H-SiC
A type	N-type SiC substrate
Resistance	0.015 – 0.028 ohm * cm
surface orientation	Off-Axis-misorientation: 4.0˚ towards [11-20] ± 0.5˚
Diameter	100.0 mm + 0.0 / -0.5 mm
Thickness	350.0 µm ± 25.0 µm
The length of the main cut	32.5 mm ± 2.0 mm
The length of the secondary cut	18.0 mm ± 2.0 mm
Orthogonal disorientation	± 5.0˚
Orientation main cutoff	[11-20] ± 5.0˚
The orientation of the secondary cut	90.0˚ clockwise relative to the main shear ± 5.0˚, working up the side plate (Si side)
Surface quality	Reverse: an optical polishing, the working party: the chemical-mechanical polishing, epi-ready (ready for epitaxy)
(MPD) Density of micropores type defects	–
Ultra-low density of defects such as micropores	≤1 / cm2
(BPD) Basal planar dislocation	≤1500 / cm2
Full thickness variation (TTV)	≤15 µm
curvature of plate	≤45 µm
The local thickness variation per 1 cm2	m ≤4
The absence of stacking faults	+
Lack hexagonal inclusions	+
Absence of carbon inclusions	> 99% 4H polytype
product class
Boundary chipped / recess under diffuse illumination	width and depth of ≥ 0,5 mm not allowed
The total gross area of the defect,determined using a microscope at 200X ⃰	≤ 10% of the area
Furrow / band under diffuse illumination	not allowed
The field of foreign polytype under diffuse illumination ⃰	≤5% area
Stains and other contaminants in the light of high intensity	not allowed
Cracks in the light of high intensity	not allowed
Defects in the form of hexagonal structures with high light intensity ⃰	the total area of ≤10%
Scratches length determined by confocal microscopy Lasertec	total ≤ 150 mm
* Exception – a distance 3mm from the edge of the plate

 

2. Specifications of Semi-insulating Silicon Carbide,100 mm Diameter

The plates of the semi-insulating silicon carbide 100 mm diameter. – 8 pcs.
Polytype	4H-SiC
A type	Semi-insulating SiC substrate of high purity
Resistance	≥1E6 ohm * cm
surface orientation	On-Axis: (0001) ± 0.25˚
Diameter	100.0 mm + 0.0 / -0.5 mm
Thickness	500.0 µm ± 25.0 . µm
The length of the main cut	32.5 mm ± 2.0 mm
The length of the secondary cut	18.0 mm ± 2.0 mm
Orthogonal disorientation	–
Orientation main cutoff	[11-20] ± 5.0˚
The orientation of the secondary cut	90.0˚ clockwise relative to the main shear ± 5.0˚, working up the side plate (Si side)
Surface quality	Back side: optical polishing, the working party: the chemical-mechanical polishing, epi-ready (ready for epitaxy)
(MPD) Density of micropores type defects	standard
Ultra-low density of defects such as micropores	–
(BPD) Basal planar dislocation	–
(TTV) Full thickness variation	≤15 µm
Curvature of plate	≤45 µm
The local thickness variation per 1 cm2	≤ 4 µm
The absence of stacking faults	+
Lack hexagonal inclusions	+
Absence of carbon inclusions	> 99% 4H polytype
Product class
Boundary chipped / recess under diffuse illumination	width and depth of ≥ 0,5 mm not allowed
The total gross area of the defect,	≤ 10% of the area
determined using a microscope at 200X ⃰
Furrow / band under diffuse illumination	not allowed
The field of foreign polytype under diffuse illumination ⃰	≤5% area
Stains and other contaminants in the light of high intensity	not allowed
Cracks in the light of high intensity	not allowed
Defects in the form of hexagonal structures with high light intensity ⃰	the total area of ​​≤10%
Scratches length determined by confocal microscopy Lasertec	total ≤ 150 mm
* Exception – a distance 3mm from the edge of the plate

3. Electrical Characteristics of Silicon Carbide

Silicon carbide properties in electrical aspect are superior than that of silicon:

3.1 High voltage resistance:

The breakdown electric field of 100mm silicon carbide wafer is 10 times stronger than silicon. The device made of a silicon carbide substrate can greatly Improve the withstand voltage capacity, operating frequency and current density, and greatly reduce the conduction loss of the device.

3.2 High temperature resistance:

At higher temperature, semiconductor devices will produce intrinsic excitation of carriers, causing device failure. The greater the band gap, the higher the limit operating temperature of the device. The silicon carbide band gap is close to 3 times that of silicon, which can ensure the reliability of silicon carbide devices under high temperature conditions. Generally, the maximum operating temperature of silicon devices cannot exceed 300°C, but the limit operating temperature of silicon carbide devices can reach 600°C or more. At the same time, the silicon carbide thermal conductivity is higher than that of silicon. The high thermal conductivity helps silicon carbide devices to dissipate heat, and maintain a lower temperature under the same output power. Therefore, devices made on 100mm silicon carbide have lower requirements for heat dissipation design, contributing to the miniaturization of equipment.

3.3 Achieve high-frequency performance:

The saturated electron drift rate of silicon carbide is large and is twice that of silicon, which determines that silicon carbide devices can achieve higher operating frequencies and higher power density. Based on these excellent characteristics, the use limit performance of the 100mm silicon carbide substrate is better than that of the silicon substrate, which can meet the high application requirements under the conditions of high temperature, high voltage, high frequency, high power, etc., have already been applied to radio frequency devices and power devices.

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