100mm Silicon Carbide

100mm Silicon Carbide

Below specification of 100mm silicon carbide in our company are available:

Specificationsof Silicon Carbide N-type 100mm Diameter –

Specificationsof Silicon Carbide N-type 100mm Diameter –
polytype 4H-SiC
A type N-type SiC substrate
Resistance 0.015 – 0.028 ohm * cm
surface orientation Off-Axis-misorientation: 4.0˚ towards [11-20] ± 0.5˚
Diameter 100.0 mm + 0.0 / -0.5 mm
Thickness 350.0 µm ± 25.0 µm
The length of the main cut 32.5 mm ± 2.0 mm
The length of the secondary cut 18.0 mm ± 2.0 mm
orthogonal disorientation ± 5.0˚
Orientation main cutoff [11-20] ± 5.0˚
The orientation of the secondary cut 90.0˚ clockwise relative to the main shear ± 5.0˚, working up the side plate (Si side)
surface quality Reverse: an optical polishing, the working party: the chemical-mechanical polishing, epi-ready (ready for epitaxy)
(MPD) Density of micropores type defects
Ultra-low density of defects such as micropores ≤1 / cm2
(BPD) Basal planar dislocation ≤1500 / cm2
Full thickness variation (TTV) ≤15 µm
curvature of plate ≤45 µm
The local thickness variation per 1 cm2 m ≤4
The absence of stacking faults +
Lack hexagonal inclusions +
Absence of carbon inclusions > 99% 4H polytype
product class
Boundary chipped / recess under diffuse illumination width and depth of ≥ 0,5 mm not allowed
The total gross area of the defect,determined using a microscope at 200X ⃰ ≤ 10% of the area
Furrow / band under diffuse illumination not allowed
 The field of foreign polytype under diffuse illumination ⃰ ≤5% area
Stains and other contaminants in the light of high intensity not allowed
Cracks in the light of high intensity not allowed
Defects in the form of hexagonal structures with high light intensity ⃰ the total area of ≤10%
scratches length determined by confocal microscopy Lasertec total ≤ 150 mm
* Exception – a distance 3mm from the edge of the plate

 

Specifications of Semi-insulating Silicon Carbide ,100 mm Diameter:

The plates of the semi-insulating silicon carbide 100 mm diameter. – 8 pcs.
polytype 4H-SiC
A type Semi-insulating SiC substrate of high purity
Resistance ≥1E6 ohm * cm
surface orientation On-Axis: (0001) ± 0.25˚
Diameter 100.0 mm + 0.0 / -0.5 mm
Thickness 500.0 µm ± 25.0 . µm
The length of the main cut 32.5 mm ± 2.0 mm
The length of the secondary cut 18.0 mm ± 2.0 mm
orthogonal disorientation
Orientation main cutoff [11-20] ± 5.0˚
The orientation of the secondary cut 90.0˚ clockwise relative to the main shear ± 5.0˚, working up the side plate (Si side)
surface quality Back side: optical polishing, the working party: the chemical-mechanical polishing, epi-ready (ready for epitaxy)
(MPD) Density of micropores type defects standard
Ultra-low density of defects such as micropores
(BPD) Basal planar dislocation
 (TTV) Full thickness variation ≤15 µm
curvature of plate ≤45 µm
The local thickness variation per 1 cm2 ≤ 4 µm
The absence of stacking faults +
Lack hexagonal inclusions +
Absence of carbon inclusions > 99% 4H polytype
product class
Boundary chipped / recess under diffuse illumination width and depth of ≥ 0,5 mm not allowed
The total gross area of ​​the defect, ≤ 10% of the area
determined using a microscope at 200X ⃰
Furrow / band under diffuse illumination not allowed
The field of foreign polytype under diffuse illumination ⃰ ≤5% area
Stains and other contaminants in the light of high intensity not allowed
Cracks in the light of high intensity not allowed
Defects in the form of hexagonal structures with high light intensity ⃰ the total area of ​​≤10%
scratches length determined by confocal microscopy Lasertec total ≤ 150 mm
* Exception – a distance 3mm from the edge of the plate

 

For more information, please send us email at victorchan@powerwaywafer.com

 

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