100mm Silicon Carbide
Below specification of 100mm silicon carbide in our company are available:
Specificationsof Silicon Carbide N-type 100mm Diameter –
Specificationsof Silicon Carbide N-type 100mm Diameter – | |
polytype | 4H-SiC |
A type | N-type SiC substrate |
Resistance | 0.015 – 0.028 ohm * cm |
surface orientation | Off-Axis-misorientation: 4.0˚ towards [11-20] ± 0.5˚ |
Diameter | 100.0 mm + 0.0 / -0.5 mm |
Thickness | 350.0 µm ± 25.0 µm |
The length of the main cut | 32.5 mm ± 2.0 mm |
The length of the secondary cut | 18.0 mm ± 2.0 mm |
orthogonal disorientation | ± 5.0˚ |
Orientation main cutoff | [11-20] ± 5.0˚ |
The orientation of the secondary cut | 90.0˚ clockwise relative to the main shear ± 5.0˚, working up the side plate (Si side) |
surface quality | Reverse: an optical polishing, the working party: the chemical-mechanical polishing, epi-ready (ready for epitaxy) |
(MPD) Density of micropores type defects | – |
Ultra-low density of defects such as micropores | ≤1 / cm2 |
(BPD) Basal planar dislocation | ≤1500 / cm2 |
Full thickness variation (TTV) | ≤15 µm |
curvature of plate | ≤45 µm |
The local thickness variation per 1 cm2 | m ≤4 |
The absence of stacking faults | + |
Lack hexagonal inclusions | + |
Absence of carbon inclusions | > 99% 4H polytype |
product class | |
Boundary chipped / recess under diffuse illumination | width and depth of ≥ 0,5 mm not allowed |
The total gross area of the defect,determined using a microscope at 200X ⃰ | ≤ 10% of the area |
Furrow / band under diffuse illumination | not allowed |
The field of foreign polytype under diffuse illumination ⃰ | ≤5% area |
Stains and other contaminants in the light of high intensity | not allowed |
Cracks in the light of high intensity | not allowed |
Defects in the form of hexagonal structures with high light intensity ⃰ | the total area of ≤10% |
scratches length determined by confocal microscopy Lasertec | total ≤ 150 mm |
* Exception – a distance 3mm from the edge of the plate |
Specifications of Semi-insulating Silicon Carbide ,100 mm Diameter:
The plates of the semi-insulating silicon carbide 100 mm diameter. – 8 pcs. | |
polytype | 4H-SiC |
A type | Semi-insulating SiC substrate of high purity |
Resistance | ≥1E6 ohm * cm |
surface orientation | On-Axis: (0001) ± 0.25˚ |
Diameter | 100.0 mm + 0.0 / -0.5 mm |
Thickness | 500.0 µm ± 25.0 . µm |
The length of the main cut | 32.5 mm ± 2.0 mm |
The length of the secondary cut | 18.0 mm ± 2.0 mm |
orthogonal disorientation | – |
Orientation main cutoff | [11-20] ± 5.0˚ |
The orientation of the secondary cut | 90.0˚ clockwise relative to the main shear ± 5.0˚, working up the side plate (Si side) |
surface quality | Back side: optical polishing, the working party: the chemical-mechanical polishing, epi-ready (ready for epitaxy) |
(MPD) Density of micropores type defects | standard |
Ultra-low density of defects such as micropores | – |
(BPD) Basal planar dislocation | – |
(TTV) Full thickness variation | ≤15 µm |
curvature of plate | ≤45 µm |
The local thickness variation per 1 cm2 | ≤ 4 µm |
The absence of stacking faults | + |
Lack hexagonal inclusions | + |
Absence of carbon inclusions | > 99% 4H polytype |
product class | |
Boundary chipped / recess under diffuse illumination | width and depth of ≥ 0,5 mm not allowed |
The total gross area of the defect, | ≤ 10% of the area |
determined using a microscope at 200X ⃰ | |
Furrow / band under diffuse illumination | not allowed |
The field of foreign polytype under diffuse illumination ⃰ | ≤5% area |
Stains and other contaminants in the light of high intensity | not allowed |
Cracks in the light of high intensity | not allowed |
Defects in the form of hexagonal structures with high light intensity ⃰ | the total area of ≤10% |
scratches length determined by confocal microscopy Lasertec | total ≤ 150 mm |
* Exception – a distance 3mm from the edge of the plate |
For more information, please send us email at victorchan@powerwaywafer.com