100mm Silicon Carbide
Below specification of 100mm silicon carbide in our company are available:
Specificationsof Silicon Carbide N-type 100mm Diameter –
| Specificationsof Silicon Carbide N-type 100mm Diameter – | |
| polytype | 4H-SiC |
| A type | N-type SiC substrate |
| Resistance | 0.015 – 0.028 ohm * cm |
| surface orientation | Off-Axis-misorientation: 4.0˚ towards [11-20] ± 0.5˚ |
| Diameter | 100.0 mm + 0.0 / -0.5 mm |
| Thickness | 350.0 µm ± 25.0 µm |
| The length of the main cut | 32.5 mm ± 2.0 mm |
| The length of the secondary cut | 18.0 mm ± 2.0 mm |
| orthogonal disorientation | ± 5.0˚ |
| Orientation main cutoff | [11-20] ± 5.0˚ |
| The orientation of the secondary cut | 90.0˚ clockwise relative to the main shear ± 5.0˚, working up the side plate (Si side) |
| surface quality | Reverse: an optical polishing, the working party: the chemical-mechanical polishing, epi-ready (ready for epitaxy) |
| (MPD) Density of micropores type defects | – |
| Ultra-low density of defects such as micropores | ≤1 / cm2 |
| (BPD) Basal planar dislocation | ≤1500 / cm2 |
| Full thickness variation (TTV) | ≤15 µm |
| curvature of plate | ≤45 µm |
| The local thickness variation per 1 cm2 | m ≤4 |
| The absence of stacking faults | + |
| Lack hexagonal inclusions | + |
| Absence of carbon inclusions | > 99% 4H polytype |
| product class | |
| Boundary chipped / recess under diffuse illumination | width and depth of ≥ 0,5 mm not allowed |
| The total gross area of the defect,determined using a microscope at 200X ⃰ | ≤ 10% of the area |
| Furrow / band under diffuse illumination | not allowed |
| The field of foreign polytype under diffuse illumination ⃰ | ≤5% area |
| Stains and other contaminants in the light of high intensity | not allowed |
| Cracks in the light of high intensity | not allowed |
| Defects in the form of hexagonal structures with high light intensity ⃰ | the total area of ≤10% |
| scratches length determined by confocal microscopy Lasertec | total ≤ 150 mm |
| * Exception – a distance 3mm from the edge of the plate | |
Specifications of Semi-insulating Silicon Carbide ,100 mm Diameter:
| The plates of the semi-insulating silicon carbide 100 mm diameter. – 8 pcs. | |
| polytype | 4H-SiC |
| A type | Semi-insulating SiC substrate of high purity |
| Resistance | ≥1E6 ohm * cm |
| surface orientation | On-Axis: (0001) ± 0.25˚ |
| Diameter | 100.0 mm + 0.0 / -0.5 mm |
| Thickness | 500.0 µm ± 25.0 . µm |
| The length of the main cut | 32.5 mm ± 2.0 mm |
| The length of the secondary cut | 18.0 mm ± 2.0 mm |
| orthogonal disorientation | – |
| Orientation main cutoff | [11-20] ± 5.0˚ |
| The orientation of the secondary cut | 90.0˚ clockwise relative to the main shear ± 5.0˚, working up the side plate (Si side) |
| surface quality | Back side: optical polishing, the working party: the chemical-mechanical polishing, epi-ready (ready for epitaxy) |
| (MPD) Density of micropores type defects | standard |
| Ultra-low density of defects such as micropores | – |
| (BPD) Basal planar dislocation | – |
| (TTV) Full thickness variation | ≤15 µm |
| curvature of plate | ≤45 µm |
| The local thickness variation per 1 cm2 | ≤ 4 µm |
| The absence of stacking faults | + |
| Lack hexagonal inclusions | + |
| Absence of carbon inclusions | > 99% 4H polytype |
| product class | |
| Boundary chipped / recess under diffuse illumination | width and depth of ≥ 0,5 mm not allowed |
| The total gross area of the defect, | ≤ 10% of the area |
| determined using a microscope at 200X ⃰ | |
| Furrow / band under diffuse illumination | not allowed |
| The field of foreign polytype under diffuse illumination ⃰ | ≤5% area |
| Stains and other contaminants in the light of high intensity | not allowed |
| Cracks in the light of high intensity | not allowed |
| Defects in the form of hexagonal structures with high light intensity ⃰ | the total area of ≤10% |
| scratches length determined by confocal microscopy Lasertec | total ≤ 150 mm |
| * Exception – a distance 3mm from the edge of the plate | |
For more information, please send us email at victorchan@powerwaywafer.com