10*10mm2 N-GaN Freestanding GaN Substrate

10*10mm2 N-GaN Freestanding GaN Substrate

10*10mm2 N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers 10*10mm2 N-GaN Freestanding GaN Substrate

ItemPAM-FS-GAN-50-N
Dimension10 x 10.5 mm2
Thickness380+/-50um
OrientationC plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction TypeN-type
Resistivity (300K)< 0.05 Ω·cm
TTV≤ 10 µm
BOWBOW ≤ 10 µm
Surface Roughness:Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.

Dislocation Density≤5x 106 cm-2 (calculated by CL)*
Macro Defect Density0 cm-2
Useable Area> 90% (edge exclusion)
 

Package

each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at [email protected] and [email protected]

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