10*10mm2 Si-GaN Freestanding GaN Substrate

10*10mm2 Si-GaN Freestanding GaN Substrate

PAM-XIAMEN offers 10*10mm2 Si-GaN Freestanding GaN Substrate

Item PAM-FS-GaN-50-SI
Dimension 10 x 10.5 mm2
Thickness 380+/-50um
Orientation C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type Semi-Insulating
Resistivity (300K) > 106 Ω.cm
TTV ≤ 10 µm
BOW BOW ≤ 10 µm
Surface Roughness: Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.

Dislocation Density ≤5x 106 cm-2 (calculated by CL)*
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
 

Package

each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

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