(11-22) Plane N-GaN Freestanding GaN Substrate

  • Home
  • News
  • (11-22) Plane N-GaN Freestanding GaN Substrate

(11-22) Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (11-22) Plane N-GaN Freestanding GaN Substrate

Item PAM-FS-GAN(11-22)- N
Dimension 5 x 10 mm2
Thickness 380+/-50um
Orientation (10-11) plane off angle toward A-axis 0 ±0.5°

(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type N-type
Resistivity (300K) < 0.05 Ω·cm
TTV ≤ 10 µm
BOW BOW ≤ 10 µm
Surface Roughness Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density ≤ 5 x 10 6cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-08-20

Share this post

Related Posts

PAM-XIAMEN Offers InGaP

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaP and other related products and services announced the new availability of size 3”  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are [...]

2017-10-11meta-author
Ag — Silver Single Crystal & Substrate

PAM XIAMEN offers high-quality Ag — Silver Single Crystal & Substrate. PAM XIAMEN grows Silver single crystal along <111> direction up to 20 mm diameter by Modified Bridgeman method. The silver single crystal substrate is cut from the Ag ingot and polished to 30A [...]

2019-04-16meta-author
6″ Prime Silicon Wafer Thickness 525+/-25um

PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 525+/-25um. Si, 150mm dia. SSP 525+/-25 thick N type Phos or antimony resistivity 0.01-0.2 ohm-cm. with 200A thermal OX and 1200A LPCVD nitride – stoichiometric For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]

2019-06-28meta-author
4″ Silicon Wafer-5

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Intrinsic Si:- [100] 4″ 500 P/E FZ 13,000-20,000 SEMI Prime, TTV<5μm, Front-side Prime polish, Back-side light polish Intrinsic Si:- [100] 4″ 615 ±10 C/C FZ >10,000 SEMI Prime Intrinsic Si:- [100] 4″ 800 C/C FZ >10,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 4″ 525 P/E FZ >22,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 4″ 300 P/E FZ 20,000-40,000 SEMI, TTV<5μm Intrinsic Si:- [111] ±0.5° 4″ 450 P/P FZ >20,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 4″ 500 P/E FZ >20,000 SEMI Prime, Extra 3 free non-prime wafers included with 4 prime wafers Intrinsic Si:- [111] ±1.0° 4″ 500 P/P FZ >15,000 SEMI Prime, TTV<5μm p-type Si:B [110] ±0.25° 4″ 525 P/E 5-10 SEMI [...]

2019-03-05meta-author
Test grade silicon wafers-5

PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 DSP Phosphorus N 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.25 ° 1.5 ± 0.5 Ohmcm 150 ± 0.5 mm 280 ± 2.5 µm 30 1,25 30 6 DSP Phosphorus N 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.5° 1-4 Ohmcm 150 [...]

2019-02-25meta-author
M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy   M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms [...]

2013-04-12meta-author