(11-22) Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (11-22) Plane N-GaN Freestanding GaN Substrate:

Item	PAM-FS-GAN(11-22)- N
Dimension	5 x 10 mm² or 5 x 20 mm²
Thickness	380+/-50um
Orientation	(11-22) plane off angle toward A-axis 0 ±0.5° (11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type	N-type / Si Doped
Resistivity (300K)	< 0.05 Ω·cm
TTV	≤ 10 µm
BOW	BOW ≤ 10 µm
Surface Roughness	Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished.
Dislocation Density	≤ 5 x 10⁶cm^-2
Macro Defect Density	0 cm-2
Useable Area	> 90% (edge exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

For more information, please contact us email at [email protected] and [email protected]

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(11-22) Plane N-GaN Freestanding GaN Substrate

(11-22) Plane N-GaN Freestanding GaN Substrate

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