PAM XIAMEN offers single crystal LiTaO3. LiTaO3 X-cut LiTaO3 optical grade, X-cut, 10x10x0.5mm, 2 SP LiTaO3 saw grade, X-cut, 10x10x0.5mm, 1sp LiTaO3 saw grade, X-cut, 3″ Dia x 0.5mm wafer, 1sp LiTaO3, 4″ wafer, specific parameters as follows: 4″ LT Wafer Specification Diameter 100.0±0.5mm Orientation Flat (OF) 30±2mm Second Refer. Flat [...]
2019-05-08meta-author
Equipment Shortages Pushes Back Sharp’s OLED Production Sharp might be adjusting its OLED panel production plan, and move the production plant in Taiwan to a joint venture factory with Foxconn in Japan, reported Nikkei Asian Review. The joint venture with Foxconn is a 10th generation display [...]
2016-08-30meta-author
PAM-XIAMEN offers InGaAs APD wafers with high performance. InGaAs avalanche photo diodes(InGaAs APD) are highly regarded for its low noise, higher bandwidth, and spectral response extended to 1700 nm. It is available for 1550nm wavelength after optimizing and very suitable for use in eye-safe laser ranging [...]
2021-04-15meta-author
Suppression Of Gate Leakage Current In GaN MOS Devices By Passivation With Photo-grown Ga2O3 We report the use of photo-enhanced chemical (PEC) technique to form high-quality metal oxide semiconductor (MOS) devices made of gallium oxide (Ga2O3)/gallium nitride (GaN). Gate leakage current density as low as [...]
2012-12-07meta-author
The realization of low-dislocation-density bulk GaN crystals is necessary for use in the fabrication of future high-power devices with low power consumption. In this study, we attempted the regrowth of low-dislocation-density (104–105 cm−2) GaN substrates to fabricate thick and low-dislocation-density GaN crystals using the dipping [...]
2019-11-18meta-author
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 4″ 400 P/P 0.001-0.005 SEMI Prime p-type Si:B [100] 4″ 500 P/P 0.001-0.005 SEMI Prime, Wafers with striation marks p-type Si:B [100] 4″ 525 P/P 0.001-0.005 SEMI Prime, TTV<5μm, Bow<15μm, Warp<30μm p-type Si:B [100] 4″ 525 P/E 0.001-0.002 SEMI Prime, TTV<4μm p-type Si:B [100] 4″ 525 P/E 0.001-0.005 SEMI Prime, TTV<5μm p-type Si:B [100] 4″ 525 BROKEN 0.001-0.005 Broken wafer (shattered into many pieces) p-type Si:B [100] 4″ 800 C/C 0.001-0.005 SEMI, With striation marks p-type Si:B [100] 4″ ? P/P SEMI Test p-type Si:B [100] 4″ 375 P/E <0.0015 {0.00091-0.00099} SEMI Prime, TTV<3μm p-type Si:B [111] 4″ 350 P/E 2-3 Prime, NO Flats p-type Si:B [111] 4″ 1000 P/P 1-10 SEMI Prime, Cassettes of 10 [...]
2019-03-05meta-author