(11-22) Plane N-GaN Freestanding GaN Substrate

  • Home
  • News
  • (11-22) Plane N-GaN Freestanding GaN Substrate

(11-22) Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (11-22) Plane N-GaN Freestanding GaN Substrate

Item PAM-FS-GAN(11-22)- N
Dimension 5 x 10 mm2
Thickness 380+/-50um
Orientation (10-11) plane off angle toward A-axis 0 ±0.5°

(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type N-type
Resistivity (300K) < 0.05 Ω·cm
TTV ≤ 10 µm
BOW BOW ≤ 10 µm
Surface Roughness Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density ≤ 5 x 10 6cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-08-20

Share this post

Related Posts

2″ Silicon Wafer-14

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 2″ 5000 P/E 3.4-3.7 SEMI Prime, Individual cst n-type Si:P [100] 2″ 40 ±10 P/P 1-3 SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 5 wafers n-type Si:P [100] 2″ 1000 P/P 1-10 SEMI Prime n-type Si:Sb [100] 2″ 280 P/E 0.01-0.02 SEMI Prime n-type Si:Sb [100] 2″ 1000 P/E 0.005-0.020 SEMI Prime n-type Si:As [100] 2″ 300 P/P 0.001-0.005 SEMI Prime n-type Si:As [100] 2″ 500 P/E 0.001-0.005 SEMI Prime n-type Si:As [100] 2″ 7000 P/E 0.001-0.005 SEMI Prime, Individual cst n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime,  Individual cst n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime,  Individual [...]

2019-03-07meta-author
4″ Silicon Wafer-13

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:Sb [211] ±0.5° 4″ 1,500 ±15 P/P 0.01-0.02 SEMI Prime, TTV<1μm n-type Si:Sb [211] ±0.5° 4″ 1600 C/C 0.01-0.02 SEMI Test, Wafers can be polished for additional fee n-type Si:P [111] 4″ 1200 P/P 35-85 SEMI Prime n-type Si:P [111] ±0.5° 4″ 1500 P/E >20 {24-29} SEMI Prime, TTV<5μm, in Empak cassettes of 2 wafers n-type Si:P [111] ±0.5° 4″ 250 P/E 18-25 SEMI Prime n-type Si:P [111] ±0.5° 4″ 500 P/P 11-15 SEMI Prime, Both-sides Epi Ready polished n-type Si:P [111] 4″ 280 P/E 1.3-2.7 SEMI Prime n-type Si:P [111] ±0.5° 4″ 280 P/E 1.3-2.7 SEMI Prime n-type [...]

2019-03-05meta-author
3″CZ Prime Silicon Wafer-1

PAM XIAMEN offers 3″CZ Prime Silicon Wafer-1 Item4, 50pcs Silicon wafer: i. Diameter: 76.2 mm ± 0.5 mm, ii. Thickness: 375μm ± 25μm iii. Doping: N type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: [...]

2020-03-27meta-author
GaAs HEMT epi wafer

GaAs HEMT epi wafer We can offer 4″GaAs HEMT epi wafer, please see below typical structure: Structure1: 4″AlGaAs/GaAs HEMT epi wafer( PAM200416-HEMT): HEMT structure Thickness GaAs cap layer 100A AlGaAs, x=0.28,barrier layer, Si doped 7E17 500A AlGaAs, x=0.28,spacer layer 150A GaAs 0.5um AlxGaAs/GaAs, x=0.28, SL 30A/30A, 10 period GaAs buffer 2000A GaAs substrate —   Remark: 300K，Mobility :> 5000cm2/V.s, Ns>4.0E11  77K, Mobility: > 150,000-190,000 cm2/V.s,Ns>4.0E11 Structure [...]

2013-11-19meta-author
4″ Silicon Wafer-8

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 4″ 2100 P/E 1-100 SEMI Prime, Manual Edges p-type Si:B [100] 4″ 3000 P/P 1-10 SEMI Prime p-type Si:B [100] 4″ 3175 P/P 1-10 SEMI Prime, TTV<8μm p-type Si:B [100] 4″ 3200 P/E 1-100 SEMI Prime, Sealed as group of 9 wafers p-type Si:B [100] 4″ 4000 P/P 1-100 SEMI Prime p-type Si:B [100] 4″ 4000 P/P 1-100 SEMI Prime p-type Si:B [100] 4″ 5000 P/E 1-100 Prime, NO Flats p-type Si:B [100] 4″ 890 ±15 P/P 0.5-10.0 SEMI TEST (Scratches), TTV<8μm p-type Si:B [100] ±0.2° 4″ 300 P/P 0.1-0.3 SEMI Prime p-type Si:B [100] ±1° 4″ 490 ±5 P/P 0.1-1.0 SEMI Prime, TTV<0.8μm p-type Si:B [100] 4″ 525 P/E 0.1-0.2 SEMI Prime p-type Si:B [100] 4″ 350 P/E 0.095-0.130 SEMI Prime p-type [...]

2019-03-05meta-author
4″ Silicon Wafer-3

PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity  Thickness Surface Grade 100 P Boron CZ -100 1-20 43768 P/P PRIME 100 P Boron CZ -100 1-20 40-60 P/P PRIME 100 P Boron CZ -100 1-20 80-100 P/P PRIME 100 P Boron CZ -100 1-20 180-200 P/P PRIME 100 P Boron CZ -100 1-20 300-350 P/E PRIME 100 P Boron CZ -100 1-20 300-350 P/P PRIME 100 P Boron CZ -100 1-20 350-400 P/P PRIME 100 P Boron CZ -100 1-20 375-425 P/E PRIME 100 P Boron CZ -100 .001-.005 450-500 P/P PRIME 100 P Boron CZ -100 .005-.02 450-500 P/P PRIME 100 P Boron FZ -100 >3000 450-500 P/P PRIME 100 P Boron CZ -100 1-20 450-500 P/P PRIME 100 P Boron CZ -100 .001-.005 500-550 P/E PRIME 100 P Boron CZ -100 .005-.02 500-550 P/E PRIME 100 P Boron FZ -100 >3000 500-550 P/E PRIME 100 P Boron CZ -100 1-20 500-550 P/E PRIME 100 P Boron CZ -100 1-20 500-550 P/E/DTOx PRIME 100 P Boron CZ -100 1-20 500-550 P/E/Ni PRIME 100 P Boron CZ -100 1-20 500-550 P/E/WTOx 100 P Boron CZ -100 1-20 950-1050 P/E PRIME 100 P Boron CZ -100 1-20 950-1050 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]

2019-03-04meta-author