Electronic lifetime engineering using low-temperature GaAs in a quantum well structure
Using an AlAs barrier, it is possible to confine the defects associated to the low temperature grown GaAs in a well-defined portion of the sample. We verified that a minimum thickness of about 5 nm [...]
2014-01-27meta-author
PAM XIAMEN offers 3″ Prime Silicon Wafer Thickness 375um.
Si wafers
dia= 75mm, thickness= 375 um
orientation (100), doping Borum (B),
Double dide polishing ( epi-polished)
p-type, resistance 0,001 Ohm/cm= 25 pcs
p-type, resistance 12 Ohm/cm= 25 pcs
p-type, resistance 10 000 Ohm/cm= 25 [...]
2019-07-01meta-author
Actually, gallium oxide is not a new technology. Studies on its application in the field of power semiconductors are carried out by companies and research institutions all the time. However, because the material supply is monopolized by two Japanese companies, researches has been greatly hindered. With the development [...]
2021-04-19meta-author
Hybrid Chips of Gallium Nitride and Silicon
Researchers at MIT say they’ve made a big step toward combining the capabilities of the silicon used in computer chips with properties of the compound semiconductors found in lasers and high-powered electronics. In the October issue of IEEE Electron [...]
Silicon Ingots -1
PAM XIAMEN offers Silicon Ingots. Below is just a short list. Contac us if you need other specs!
All diameters!
Note: Material – CZ unless noted
Kg in
Properties of Silicon
Stock
Silicon Ingots
Material Description
2.7
FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs, NO Flats
1.15
FZ 6″Ø×25mm [...]
2019-02-15meta-author
PAM XIAMEN offers Ultra-Thinned Silicon Wafers! We have them!
Free Standing Thin Silicon Wafers
We offer freestanding super thin silicon wafers with thicknesses ranging from 5µm to 100µm and with diameters from 5mm to 6. The thin Silicon wafers are true mirror finish DSP, good surface flatness, haze-free, [...]
2019-02-26meta-author
