(11-22) Plane Si-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (11-22) Plane Si-GaN Freestanding GaN Substrate

Item	PAM-FS-GAN(11-22)- SI
Dimension	5 x 10 mm²
Thickness	380+/-50um
Orientation	(10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type	Semi-Insulating
Resistivity (300K)	> 10⁶ Ω·cm
TTV	≤ 10 µm
BOW	BOW ≤ 10 µm
Surface Roughness	Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished.
Dislocation Density	≤5 x 10⁶cm^-2
Macro Defect Density	0 cm-2
Useable Area	> 90% (edge exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

For more information, please contact us email at [email protected] and [email protected]

2020-08-20

LD Bare Bar for [email protected] 2mm

PAM XIAMEN offers LD Bare Bar for [email protected] 2mm. Brand: PAM-XIAMEN Wavelength: 1550nm Filling Factor: 19% Output Power: 25W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., [...]

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PAM-XIAMEN offers Ultra Thin GaAs Wafer with both side polished, which is for high-end products in the communication electronics or optoelectronics. The general thickness of the existing GaAs wafer is over 350μm, and the target thickness of the ultra-thin grinding disc is 100μm. PAM190709-GAAS with n type and undoped [...]

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4″FZ Silicon Ignot-3

PAM XIAMEN offers 4″FZ Silicon Ignot. Silicon ingot, per SEMI, 100.7±0.3mmØ, FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm, NO Flats. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, MCC Lifetime>1,000µs For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material [...]

2019-07-04meta-author

Silicon Epi Wafers Sale

Silicon Epi Wafers Sale PAM XIAMEN offers Silicon Epi Wafers. 6″ Epitaxial Silicon WafersItem Substrate EPI CommentSize Type Res Ωcm Surf. Thick μm Type Res ΩcmPAM3197 6″Øx675μm n- Si:P[100] 0.001-0.002 P/EOx 0.016 n- Si:P 0.32-0.46 n/n+4″ Epitaxial Silicon WafersItem Substrate EPI CommentSize Type Res Ωcm Surf. Thick μm Type Res ΩcmPAM3198 4″Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 360 – 440 n/n+PAM3199 4″Øx400μm p- Si:B[111] 0.01-0.10 P/E 6.5 p- Si:B 3.6±10% P/P/P+22±1.5 p- Si:B 300±50PAM3200 4″Øx525μm p- Si:B[111] 0.01-0.02 P/E 8.1±1 p- Si:B 4.5±10% P/P/P+6.85±0.75 p- Si:B 0.75±0.15PAM3201 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 10.5 p- Si:B 570±10% p/p+PAM3202 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.15 ±10% P/P+PAM3203 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.25±10% P/P+PAM3204 4″Øx525μm p- Si:B[111] 0.001-0.005 P/E 20 p- Si:B 175±10% P/P+PAM3205 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 21 p- Si:B 150 [...]

2019-02-15meta-author

PbS single crystal

PAM XIAMEN offers PbS single crystal. The sulfate ion is a polyatomic anion with the empirical formula SO2−4 and a molecular mass of 96.06 daltons (96.06 g/mol); it consists of a central sulfur atom surrounded by four equivalent oxygen atoms in a tetrahedral arrangement. [...]

2019-05-14meta-author

Thermal Oxide Wafers, 2 – 4″ Research Grade-4

PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]

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[email protected] [email protected]

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(11-22) Plane Si-GaN Freestanding GaN Substrate

(11-22) Plane Si-GaN Freestanding GaN Substrate