Figure 1: Cross-sectional diagram of the GaN-HEMT device
Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.
This can be used in a high-capacity wireless network with coverage over a radius of several [...]
2017-12-04meta-author
PAM XIAMEN offers Silicon Wafers.
Our clients often use the following silicon wafers for the above applications:
Si 100mm P(100) 0-100 ohm-cm SSP 500um Test Grade
PDMS micro-fluidic chip platforms for micro-organoid cell culture applications.
Microfluidic platform
Characterization
Definition of a microfluidic platform
A microfluidic platform provides a set of fluidic unit operations, [...]
2019-02-26meta-author
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2797
p-type Si:B
[100]
4″
220 ±10
P/E
FZ >10,000
SEMI Prime, 1Flat, Empak cst
PAM2798
p-type Si:B
[100]
4″
230 ±10
P/E
FZ >10,000
SEMI Prime, 1Flat, Empak cst
PAM2799
p-type Si:B
[100-4° towards[110]] ±0.5°
4″
525
P/E
FZ [...]
2019-02-22meta-author
R-Plane Sapphire Substrate with SSP
PAM-XIAMEN offers R-Plane(1-102) Sapphire Substrate, single side polished,please see below spec:
2”,R-Plane Sapphire Substrate with SSP
No
Item
Specification
1
Material
High Purity Al2O3
2
Diameter
50.8土0.1mm
3
Orientation
R-plane<1-102>土0.2°
4
Thickness
430土15um
5
TTV
≤15um
6
Bow
≤10um
7
Warp
≤15um
8
Primary Flat Length
16.0土1.0mm
9
Front suface Roughmess(Ra)
Ra≤0.3nm
10
Bock Surtace Roughness(Ra)
0.8~1.2um
11
Primary Flat Orienation
A-plane+0.2°
12
Surtace onentation
R-Plane土0.2°
13
Laser Mark
back side or front side or no laser mark
14
Package
25pcsCassede.Vacum-sealed,Nitrogen-flled,Class-100 Cleanroom
3”,R-Plane Sapphire Substrate with SSP
No
ltem
Specification
1
Material
High [...]
2020-05-21meta-author
Abstract
Advanced characterisation plays an important role for further improvements of the cost effectiveness ($/Wp) of solar cells. This paper presents an overview of advanced characterisation techniques that are presently being used for the analysis of silicon wafer solar cells, either in the laboratory or in the [...]
GaN-based light-emitting diode (LED) solid-state lighting has become the most important lighting technology in recent years because it has many advantages such as high conversion efficiency, long life, and eco-friendliness. Due to the lack of natural GaN substrates, GaN-based LED structures are usually fabricated [...]
2021-12-22meta-author