(11-22) Plane U-GaN Freestanding GaN Substrate

  • Home
  • News
  • (11-22) Plane U-GaN Freestanding GaN Substrate

(11-22) Plane U-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (11-22) Plane U-GaN Freestanding GaN Substrate

Item PAM-FS-GAN(11-22)- U
Dimension 380+/-50um
Thickness 350 ±25 µm  430 ±25 µm
Orientation (11-22) plane off angle toward A-axis 0 ±0.5°

(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type N-type / Undoped
Resistivity (300K) < 0.1 Ω·cm
TTV ≤ 10 µm
BOW BOW ≤ 10 µm
Surface Roughness Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density ≤  5 x 10 6cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-08-20

Share this post

Related Posts

GaN Foundry Services for LED Fabrication

PAM-XIAMEN can offer LED epitaxy wafers and is able to offer GaN foundry services & supplies for LEDs. The GaN foundry services include OEM growth service, COW process and various test services. Specifically as follows: 1. OEM Service – Customized AlGaN-based Thin Film Epi Structure We [...]

2022-11-22meta-author
4″ Silicon Wafer-15

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Intrinsic Si:- [211] ±0.1° 4″ 275 P/P FZ >3,000 SEMI Prime, TTV<2μm Intrinsic Si:- [111] ±0.5° 4″ 500 P/P FZ >25,000 SEMI Prime p-type Si:B [110] ±0.5° 4″ 525 P/E 4-6 SEMI Prime, 2 Flats at [111], Secondary 70.5° CW from PF p-type Si:B [110] 4″ 525 P/E 2-10 PF<111> SF 109.5° p-type Si:B [100] 4″ 300 P/E 800-5,400 SEMI Prime p-type Si:B [100] 4″ 500 P/P 10-20 SEMI Prime p-type Si:B [100] 4″ 3000 P/E/P 10-15 SEMI Prime, Individual cst p-type Si:B [100-6°] 4″ 250 P/E 8-12 SEMI Prime p-type Si:B [100] 4″ 275 P/P 7-14 SEMI Prime, TTV<5μm p-type Si:B [100] 4″ 300 P/E 7-14 SEMI Prime, TTV<5μm p-type [...]

2019-03-05meta-author
CVD Single Crystal Diamond

Single crystal diamond for sale from PAM-XIAMEN is grown by chemical vapor deposition (CVD), which is a method of decomposing hydrogen and hydrocarbon gas into hydrocarbon active groups at high temperature, and depositing diamond on the substrate material under certain conditions. Theoretically, the method is [...]

2019-04-19meta-author
2″ FZ Silicon Ingot with Diameter 50mm

PAM XIAMEN offers 2″ FZ Silicon Ingot with Diameter 50mm Silicon ingot, per SEMI, G Ø50mm FZ n-type Si:P[100]±2.0°, Ro=(1,500-7,000)Ohmcm Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2020-05-27meta-author
Ge single crystal(Prime grade)-7

PAM XIAMEN offers 3″ Diameter Wafer. 3″ Diameter Wafer Ge Wafer Undoped (100) 3″ dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm Ge Wafer Undoped (100) 3″ dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm Ge Wafer Undoped (110) 3″ [...]

2019-04-25meta-author
How to Test the Distribution of Silicon Carbide Crystals by Raman Spectroscopy?

Silicon carbide has a variety of crystal types, but the silicon crystal structure the market needed is mainly 4H-SiC. So the silicon carbide crystal growth in crystal types is a defect. To a certain extent, it can be distinguished by the naked eye. A more accurate measurement method for testing [...]

2021-04-27meta-author