There are more than 200 silicon carbide crystal types in the world, among which the mainstream crystal type of current silicon carbide wafer production is 4H-SiC. Below specification of 100mm silicon carbide in PAM-XIAMEN are available:
1. Specifications of 100mm Silicon Carbide 4H N-type
Specificationsof Silicon Carbide N-type 100mm Diameter –
N-type SiC substrate
Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching
In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by [...]
The co-precipitation of Si and SiC quantum dots (QDs) in Si-rich silicon carbide (Si-rich SiC) films with n-type and p-type dopants is preliminarily demonstrated with low-temperature plasma enhanced chemical vapor deposition and high-temperature annealing. With specific hydrogen-free recipe of argon diluted silane (SiH4) and [...]
PAM XIAMEN offers Single crystal TeO2.
TeO2 (110) 10x10x0.5mm, 1sp
TeO2 (001) 5x5x0.3mm, 2sp
TeO2 (110) 10x10x0.5mm, 2sp
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
PAM XIAMEN offers YVO4 Undoped Yttrium Orthovanadate Crystals.
UNDOPED YVO4 IS AN EXCELLENT NEWLY DEVELOPED BIREFRINGENCE OPTICAL CRYSTAL.
It has very good transmission in a wide wavelength range from visible to infrared.
It has large index of refractivity and birefringence difference.
Compared with other important birefringence crystals, YVO4 has higher. [...]
Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling
On the base of the physical analytical models based on Poisson’s equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact [...]