(11-22) Plane U-GaN Freestanding GaN Substrate

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(11-22) Plane U-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (11-22) Plane U-GaN Freestanding GaN Substrate

Item PAM-FS-GAN(11-22)- U
Dimension 380+/-50um
Thickness 350 ±25 µm  430 ±25 µm
Orientation (10-11) plane off angle toward A-axis 0 ±0.5°

(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type N-type / Undoped
Resistivity (300K) < 0.1 Ω·cm
TTV ≤ 10 µm
BOW BOW ≤ 10 µm
Surface Roughness Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density ≤  5 x 10 6cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at [email protected] and [email protected]

2020-08-20

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