PAM XIAMEN offers Black Phosphorus – 2D crystal.
Black Phosphorus Crystal,(2-2.5) mm x (2-2.5) mm x 0.1 mm, as grown
Black Phosphorus is a semiconductor with a band gap of around 0.3 eV. The layers are stacked together via van der Waals interactions. A [...]
2019-04-17meta-author
PAM XIAMEN offers 100mm Si wafers. Please send us email at [email protected] if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2485
p–type Si:B
[100]
4″
3000
P/E
1–100
SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers
PAM2486
p–type Si:B
[100]
4″
3000
P/E
1–30
SEMI, 2Flats, Individual cst
PAM2487
p–type Si:B
[100]
4″
3175
P/P
1–10
SEMI Prime, 2Flats, Individual cst, TTV<8μm
PAM2488
p–type Si:B
[100]
4″
3175
P/P
1–10
SEMI Prime, 2Flats, Individual cst, [...]
2019-02-19meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
8
SSP
Arsenic
N+
100
0,0 ± 0,0
010 ± 1
0.0 ± 0.4°
0.002 – 0.003 Ohmcm
200 ± 0.1 mm
725 ± 15 µm
6
60
8
SSP
Boron
P
100
0,0 ± 0,0
011 ± 1
3.5 – 7.0 Ohmcm
200 ± [...]
2019-02-25meta-author
PAM-XIAMEN offers 650nm laser diode (LD) wafer, which emits red visible light. The epi wafer for laser diode 650nm from us is composed of the epi layers: P+ GaAs, P- AlGaInP, undoped AlGaInP, undoped GaInP QW, undoped AlGaInP and N- AlGaInP, deposited on the [...]
2019-03-13meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
20
n- Si:P
7±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±0.4
N/N/N+
4″Øx380μm
n- Si:As[111]
0.001-0.005
P/EOx
21
n- Si:P
150 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
22.5
n- Si:P
12±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28.5
n- Si:P
2±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
26
n- Si:P
18±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
11
n- Si:P
2±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
27
n- Si:P
220 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
27.5
n- Si:P
>250
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
28
n- Si:P
165 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28
n- Si:P
43688
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
9-11
n- Si:P
43468
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28
n- Si:P
11±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
8-12
n- Si:P
43468
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
30
n- Si:P
11±10%
N/N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
15
n- Si:P
4±10%
N/N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
5
n- Si:P
1.5±10%
N/N/N/N+
4″Øx525μm
n- [...]
2019-03-08meta-author
The edges and notches of silicon wafers are usually machined by diamond grinding, and the grinding-induced subsurface damage causes wafer breakage and particle contamination problems. However, the edge and notch surfaces have large curvature and sharp corners, thus it is difficult to be finished [...]
2019-07-22meta-author