1″&1.5″ Silicon Wafer

PAM XIAMEN offers 1″&1.5″ Silicon Wafer.

Diameter Type Dopant Growth
method
Orientation Resistivity  Thickness Surface Grade
25.4 N Phos CZ -100 1-20 43768 P/P PRIME
25.4 N Phos CZ -100 1-20 40-60 P/P PRIME
25.4 N Phos CZ -100 1-20 80-100 P/P PRIME
25.4 N Phos CZ -100 1-20 140-160 P/P PRIME
25.4 N Phos CZ -100 225-275 P/P PRIME
25.4 N Phos CZ -100 225-275 P/P PRIME
25.4 N Phos CZ -100 250-300 P/E PRIME
25.4 N Phos CZ -100 250-300 P/E PRIME
25.4 P Boron CZ -100 1-20 43768 P/P PRIME
25.4 P Boron CZ -100 1-20 40-60 P/P PRIME
25.4 P Boron CZ -100 1-20 80-100 P/P PRIME
25.4 P Boron CZ -100 1-20 140-160 P/P PRIME
25.4 P Boron CZ -100 1-20 225-275 P/P PRIME
25.4 P Boron CZ -100 1-20 225-275 P/P PRIME
25.4 P Boron CZ -100 1-20 250-300 P/E PRIME
25.4 P Boron CZ -100 1-20 250-300 P/E PRIME
25.4 Intrinsic Undoped FZ -100 > 20000 275-325 P/E PRIME
25.4 N Sb CZ -100 .5-40 200-250 P/E PRIME
25.4 N Sb CZ -100 5-40 225-275 P/E PRIME
25.4 Single Wafer Shipper ePak Lid/Base/Spring Holds1Wafer Clean Room
25.4 Shipping Cassette ePak Holds25Wafers Clean Room
38.1 Single Wafer Shipper ePak Lid/Base/Spring Holds1Wafer Clean Room

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

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