(110) Silicon Wafers

PAM XIAMEN offers (110) Silicon Substrates.
If you don’t see what you need then please email at sales@powerwaywafer.com.

Diam
(mm)
Material
Dopant
Orient. Thck
(μm)
Surf. Resistivity
Ωcm
Comment
6″ p–type Si:B [110] ±0.5° 390 ±10 C/C >10 Prime, 2Flats, Empak cst
7″ p–type Si:B [110] ±0.5° 500 P/E FZ >10,000 Prime, 2Flats, Empak cst, TTV<5μm
8″ p–type Si:B [110] ±0.5° 200 P/P FZ 1–2 Prime, 2Flats, Empak cst
9″ p–type Si:B [110] ±0.5° 200 P/P FZ 1–2 SEMI Prime, 2Flats, Empak cst
10″ p–type Si:B [110] ±0.5° 200 P/P FZ 1–2 SEMI Prime, 2Flats, Empak cst, Extra 8 scratched wafers in cassette free of charge
11″ n–type Si:P [110] ±0.5° 500 P/P FZ >9,600 SEMI Prime, 2Flats — Primary @ <111>±0.5° — edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, Empak cst, Lifetime>6,000μs
12″ n–type Si:P [110] ±0.5° 500 P/P FZ 5,000–15,000 SEMI Prime, 2Flats — Primary @ <111>±0.5°, Secondary @ <111>. 70.5° CCW from Primary, in Empak cst, 3 wafers with minor edge chips, Lifetime >6,000μs
13″ n–type Si:P [110] ±0.5° 500 P/P FZ 5,000–15,000 SEMI Prime, 2Flats — Primary @ <111>±0.5° — edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, in Empak cassette Lifetime>6,000μs
14″ Intrinsic Si:– [110] 500 P/P FZ >20,000 SEMI Test (Both sides with defects), 2Flats @ [111] — Secondary 70.5° CCW from Primary, Empak cst
15″ Intrinsic Si:– [110] ±0.5° 500 P/E FZ >15,000 Prime, 2Flats, Empak cst
16″ Intrinsic Si:– [110] ±0.5° 500 P/E FZ >15,000 Test, Small Surface Defects, 2Flats, Empak cst
17″ p–type Si:B [110] ±0.25° 525 P/E 5–10 SEMI Prime, Primary Flat @ [111]±0.25°, S Flat @ [111]±5° 109.5° CW from PF, Empak cst
18″ p–type Si:B [110] ±0.25° 525 P/E 5–10 SEMI Prime, 2Flats, Empak cst
19″ p–type Si:B [110] ±0.5° 750 P/E 1–100 SEMI Prime (back–side polished but not Prime), 2Flats, Empak cst, TTV<5μm, Bow/Warp<10μm
20″ p–type Si:B [110] ±0.5° 380 P/P 1–30 SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst
21″ n–type Si:P [110] ±0.5° 525 P/P 20–80 SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst
22″ n–type Si:P [110] ±0.5° 500 P/P 3–10 SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers
23″ n–type Si:P [110] ±0.2° 525 P/E 3–10 SEMI Prime, Primary Flat @ <111>±0.2°, SF @ <111> 70.5° CW from PF, TTV<4μm Bow<15μm, Warp<30μm, Empak cst
24″ n–type Si:P [110] ±0.3° 525 P/P 3–10 SEMI Prime, TTV<10�m, Bow/ Warp<30�m, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 6 & 7 wafers
25″ n–type Si:P [110] ±0.3° 525 P/P 3–10 SEMI Prime, TTV<10�m, Bow/ Warp<30�m, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary
26″ n–type Si:P [110] ±0.5° 525 P/E 3–9 SEMI Prime, Primary Flat @ <111>±1°, S Flat @ <111> 70.5° CW from PF, TTV<10μm Bow/Warp<30μm, Empak cst
27″ n–type Si:P [110] ±0.5° 525 P/E 3–9 SEMI Prime, 2Flats, Empak cst, TTV<5μm
28″ n–type Si:P [110] ±0.3° 525 P/P 3–10 SEMI Prime, TTV<10�m, Bow/ Warp<30�m, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary
29″ n–type Si:Sb [110] ±0.5° 525 P/P 0.01–0.02 {0.0176–0.0180} Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst
30″ ShowShoppingCartTally(); n–type Si:As [110] ±0.5° 275 P/P 0.001–0.005 SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°,
Secondary at 70.5°±5° CW from Primary, Empak cst

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

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